Logic circuit and semiconductor device

ABSTRACT

A logic circuit includes a thin film transistor having a channel formation region formed using an oxide semiconductor, and a capacitor having terminals one of which is brought into a floating state by turning off the thin film transistor. The oxide semiconductor has a hydrogen concentration of 5×10 19  (atoms/cm 3 ) or less and thus substantially serves as an insulator in a state where an electric field is not generated. Therefore, off-state current of a thin film transistor can be reduced, leading to suppressing the leakage of electric charge stored in a capacitor, through the thin film transistor. Accordingly, a malfunction of the logic circuit can be prevented. Further, the excessive amount of current which flows in the logic circuit can be reduced through the reduction of off-state current of the thin film transistor, resulting in low power consumption of the logic circuit.

TECHNICAL FIELD

One aspect of the present invention relates to a logic circuit includinga field-effect transistor formed using an oxide semiconductor. Further,one aspect of the present invention relates to a semiconductor deviceincluding the logic circuit.

Note that a semiconductor device in this specification indicates all thedevices that can operate by using semiconductor characteristics, andelectro-optical devices, semiconductor circuits, and electronicappliances are all included in the category of the semiconductordevices.

BACKGROUND ART

Much attention has been paid to a technology of forming a thin filmtransistor (TFT), by using a thin semiconductor film that is formed overa substrate having an insulating surface. A thin film transistor is usedfor a display device typified by a liquid crystal television. Asilicon-based semiconductor material is known as a material for a thinsemiconductor film applicable to a thin film transistor. Other than asilicon-based semiconductor material, an oxide semiconductor hasattracted attention.

As a material for the oxide semiconductor, zinc oxide and a materialcontaining zinc oxide as its component are known. Further, a thin filmtransistor formed using an amorphous oxide (oxide semiconductor) havingan electron carrier density of less than 10¹⁸/cm³ is disclosed (PatentDocuments 1 to 3).

REFERENCES Patent Documents

-   [Patent Document 1] Japanese Published Patent Application No.    2006-165527-   [Patent Document 2] Japanese Published Patent Application No.    2006-165528-   [Patent Document 3] Japanese Published Patent Application No.    2006-165529

DISCLOSURE OF INVENTION

However, a difference from the stoichiometric composition in the oxidesemiconductor arises in a thin film formation process. For example,electrical conductivity of the oxide semiconductor changes due to theexcess or deficiency of oxygen. Further, hydrogen that enters the thinoxide semiconductor film during the formation of the thin film forms anoxygen (O)-hydrogen (H) bond and serves as an electron donor, which is afactor of changing electrical conductivity. Furthermore, since the O—Hbond is a polar molecule, it serves as a factor of varyingcharacteristics of an active device such as a thin film transistormanufactured using an oxide semiconductor.

Even when having an electron carrier density of less than 10¹⁸/cm³, anoxide semiconductor is a substantially n-type oxide semiconductor.Therefore, an on-off ratio of about 10³ of the thin film transistordisclosed in the Patent Document has been obtained. Such a low on-offratio of the thin film transistor is due to large off-state current.

The on-off ratio is a measure of characteristics of a switch. Operationof a circuit including a thin film transistor with a low on-off ratiobecomes unstable. Further, current flows excessively due to largeoff-state current; thus, power consumption is increased.

In view of the foregoing problems, an object of an embodiment of thepresent invention is to suppress a malfunction of a logic circuitincluding a thin film transistor formed using an oxide semiconductor.

Further, an object of an embodiment of the present invention is toreduce power consumption of a logic circuit including a thin filmtransistor formed using an oxide semiconductor.

According to an embodiment of the present invention, a logic circuitincludes a thin film transistor having a channel formation region formedusing an oxide semiconductor which is made intrinsic or substantiallyintrinsic by removing impurities (e.g., hydrogen and water) havingpossibilities of being electron donors (or donors), and has an energygap larger than that of a silicon semiconductor.

Specifically, a logic circuit includes a thin film transistor having achannel formation region formed using an oxide semiconductor in whichthe concentration of hydrogen is set to 5×10¹⁹/cm³ or less, preferably5×10¹⁸/cm³ or less, still preferably 5×10¹⁷/cm³ or less to removehydrogen or an O—H bond included in the oxide semiconductor, and thecarrier density is set to 5×10¹⁴/cm³ or less, preferably 5×10¹²/cm³ orless.

The energy gap of the oxide semiconductor is set to 2 eV or more,preferably 2.5 eV or more, still preferably 3 eV or more to reduce asmuch impurities (e.g., hydrogen), which form donors, as possible.Further, the carrier density of the oxide semiconductor is set to1×10¹⁴/cm³ or less, preferably 1×10¹²/cm³ or less.

The thus purified oxide semiconductor is used for a channel formationregion of a thin film transistor. Accordingly, even in the case wherethe channel width is 10 mm, the drain current of 1×10⁻¹³ [A] or less isobtained at drain voltages of 1 V and 10 V and gate voltages in therange of −5 V to −20 V.

That is, an embodiment of the present invention is a logic circuitincluding a thin film transistor and a capacitor having terminals one ofwhich is electrically connected to a node which is brought into afloating state by turning off the thin film transistor. A channelformation region of the thin film transistor is formed using an oxidesemiconductor with a hydrogen concentration of 5×10¹⁹ (atoms/cm³).

Note that in this specification, the concentration is measured bysecondary ion mass spectrometry (hereinafter referred to as SIMS).However, there is no limitation particularly when descriptions of othermeasurement methods are made.

Further, a semiconductor device including the logic circuit is also anembodiment of the present invention.

In accordance with an embodiment of the present invention, a logiccircuit includes a thin film transistor having a channel formationregion formed using an oxide semiconductor; and a capacitor havingterminals one of which is brought into a floating state by turning offthe thin film transistor. The oxide semiconductor is an oxidesemiconductor with reduced hydrogen concentration. Specifically, thehydrogen concentration of the oxide semiconductor is 5×10¹⁹ (atoms/cm³)or less, and when there is no electric field, the oxide semiconductorserves as an insulator or a semiconductor which is close to an insulator(the semiconductor which is close to an insulator is substantially aninsulator). Therefore, off-state current of the thin film transistor canbe reduced. Thus, the leakage of electric charge stored in thecapacitor, through the thin film transistor, can be suppressed. Thus, amalfunction of the logic circuit can be prevented. Further, a periodwhere the one terminal of the capacitor is in a floating state can bemade long. In other words, the number of times of data rewriting to thecapacitor (also referred to as refreshing) can be reduced.

Furthermore, the excessive amount of current which flows in the logiccircuit can be reduced through the reduction of off-state current of thethin film transistor. Thus, power consumption of the logic circuit canbe reduced.

BRIEF DESCRIPTION OF DRAWINGS

FIGS. 1A and 1C are circuit diagrams illustrating examples of inverters,and

FIGS. 1B and 1D are timing charts illustrating the examples of theinverters.

FIGS. 2A to 2D are circuit diagrams illustrating examples of inverters.

FIG. 3A is a circuit diagram illustrating an example of a shiftregister, and FIG. 3B is a timing chart illustrating the example of theshift register.

FIG. 4A is a circuit diagram illustrating an example of a shiftregister, and FIG. 4B is a timing chart illustrating the example of theshift register.

FIG. 5A is a plan view illustrating an example of a thin filmtransistor, and FIG. 5B is a cross-sectional view illustrating theexample of the thin film transistor.

FIGS. 6A to 6E are cross-sectional views illustrating an example of amethod for manufacturing a thin film transistor.

FIG. 7A is a plan view illustrating an example of a thin filmtransistor, and FIG. 7B is a cross-sectional view illustrating theexample of the thin film transistor.

FIGS. 8A to 8E are cross-sectional views illustrating an example of amethod for manufacturing a thin film transistor.

FIGS. 9A and 9B are cross-sectional views illustrating examples of thinfilm transistors.

FIGS. 10A to 10E are cross-sectional views illustrating an example of amethod for manufacturing a thin film transistor.

FIGS. 11A to 11E are cross-sectional views illustrating an example of amethod for manufacturing a thin film transistor.

FIGS. 12A to 12D are cross-sectional views illustrating an example of amethod for manufacturing a thin film transistor.

FIGS. 13A to 13D are cross-sectional views illustrating an example of amethod for manufacturing a thin film transistor.

FIG. 14 is a cross-sectional view illustrating an example of a thin filmtransistor.

FIGS. 15A and 15C are plan views illustrating examples of semiconductordevices, and FIG. 15B is a cross-sectional view illustrating any of theexamples of the semiconductor devices.

FIG. 16 is a diagram illustrating an example of a pixel equivalentcircuit of a semiconductor device.

FIGS. 17A to 17C are cross-sectional views illustrating examples ofsemiconductor devices.

FIG. 18A is a plan view illustrating an example of a semiconductordevice, and FIG. 18B is a cross-sectional view illustrating the exampleof the semiconductor device.

FIG. 19 is a cross-sectional view illustrating an example of asemiconductor device.

FIGS. 20A and 20B illustrate examples of semiconductor devices.

FIGS. 21A and 21B illustrate examples of semiconductor devices.

FIG. 22 illustrates an example of a semiconductor device.

FIG. 23 illustrates an example of a semiconductor device.

FIG. 24 illustrates a band structure of a portion between a source and adrain of a MOS transistor formed using an oxide semiconductor.

FIG. 25 illustrates a state where positive voltage is applied to thedrain side in FIG. 24.

FIGS. 26A and 26B are energy band diagrams of a MOS structure of a MOStransistor formed using an oxide semiconductor, where a positive gatevoltage is applied (FIG. 26A) or a negative gate voltage is applied(FIG. 26B).

FIG. 27 illustrates a band structure of a portion between a source and adrain of a silicon MOS transistor.

FIG. 28 is a graph illustrating initial characteristics of an example ofa thin film transistor.

FIGS. 29A and 29B are top views of an element for evaluation, which isan example of a thin film transistor.

FIGS. 30A and 30B are graphs illustrating Vg-Id characteristics of anelement for evaluation, which is an example of a thin film transistor.

BEST MODE FOR CARRYING OUT THE INVENTION

Hereinafter, embodiments of the present invention will be described indetail with reference to drawings. Note that the present invention isnot limited to the description below, and it is easily understood bythose skilled in the art that a variety of changes and modifications canbe made without departing from the spirit and scope of the presentinvention. Therefore, the present invention should not be limited to thedescriptions of the embodiments below.

Note that since a source terminal and a drain terminal of a transistorchange depending on the structure, the operating condition, and the likeof the transistor, it is difficult to define which is a source terminalor a drain terminal. Therefore, in this specification, one of a sourceterminal and a drain terminal is referred to as a first terminal and theother thereof is referred to as a second terminal for distinction,hereinafter.

Note that the size, the thickness of a layer, or a region of eachstructure illustrated in drawings or the like in embodiments isexaggerated for simplicity in some cases. Therefore, embodiments of thepresent invention are not limited to such scales. Further, in thisspecification, ordinal numbers such as “first”, “second”, and “third”are used in order to avoid confusion among components, and the terms donot limit the components numerically.

Embodiment 1

In this embodiment, examples of logic circuits are described.Specifically, examples of inverters each including a thin filmtransistor having a channel formation region which is formed using anoxide semiconductor are described with reference to FIGS. 1A to 1D andFIGS. 2A to 2D.

FIG. 1A is a circuit diagram illustrating an example of an inverter ofthis embodiment. The inverter illustrated in FIG. 1A includes thin filmtransistors 11 to 14 and a capacitor 15. Here, the thin film transistor11 is a depletion type transistor and the thin film transistors 12 to 14are enhancement type transistors. Note that in this specification, ann-channel transistor whose threshold voltage is positive is referred toas an enhancement type transistor, and an n-channel transistor whosethreshold voltage is negative is referred to as a depletion typetransistor.

A first terminal of the thin film transistor 11 is electricallyconnected to a wiring for supplying a high power supply potential(V_(DD)) (hereinafter, such a wiring is also referred to as a high powersupply potential line).

A gate terminal of the thin film transistor 12 is electrically connectedto a wiring for supplying an input signal (IN) (hereinafter, such awiring is also referred to as an input signal line), and a firstterminal of the thin film transistor 12 is electrically connected to agate terminal and a second terminal of the thin film transistor 11.

A gate terminal of the thin film transistor 13 is electrically connectedto a wiring for supplying a pulse signal (PS) (hereinafter, such awiring is also referred to as a pulse signal line), a first terminal ofthe thin film transistor 13 is electrically connected to a secondterminal of the thin film transistor 12, and a second terminal of thethin film transistor 13 is electrically connected to a wiring forsupplying a low power supply potential (V_(SS)) (hereinafter, such awiring is also referred to as a low power supply potential line).

A gate terminal of the thin film transistor 14 is electrically connectedto a pulse signal line, a first terminal of the thin film transistor 14is electrically connected to the gate terminal and the second terminalof the thin film transistor 11 and the first terminal of the thin filmtransistor 12, and a second terminal of the thin film transistor 14 iselectrically connected to a wiring for outputting an output signal(hereinafter, such a wiring is also referred to as an output signalline).

One terminal of the capacitor 15 is electrically connected to the secondterminal of the thin film transistor 14 and the output signal line, andthe other terminal of the capacitor 15 is electrically connected to alow power supply potential line.

Note that the thin film transistor 11 is a depletion type transistor inwhich the first terminal is electrically connected to the high powersupply potential line and the gate terminal is electrically connected tothe second terminal. That is, the thin film transistor 11 is maintainedin an on state in any period. In other words, the thin film transistor11 is used as a resistor.

Further, in this specification, the high power supply potential (V_(DD))and the low power supply potential (V_(ss)) may be any potentials aslong as the high power supply potential (V_(DD)) is higher than the lowpower supply potential (V_(SS)). For example, a ground potential, 0 V,or the like can be used as the low power supply potential (V_(SS)), anda given positive potential or the like can be used as the high powersupply potential (V_(DD)).

Next, an operation of the circuit illustrated in FIG. 1A is describedwith reference to a timing chart in FIG. 1B. Note that FIG. 1B isillustrated while a node where the gate terminal and the second terminalof the thin film transistor 11, the first terminal of the thin filmtransistor 12, and the first terminal of the thin film transistor 14 areelectrically connected to each other is regarded as a node A.

In a period T1, the potentials of the input signal (IN) and the pulsesignal (PS) are increased to a high level. Therefore, the thin filmtransistors 12 to 14 are turned on. Thus, the node A and the oneterminal of the capacitor are electrically connected to the low powersupply potential line; i.e., the potential of the node A and an outputsignal (OUT) of the inverter are decreased to a low level. Electriccharge is not stored in the capacitor 15.

In a period T2, the potential of the pulse signal (PS) is decreased to alow level. Therefore, the thin film transistors 13 and 14 are turnedoff. When the thin film transistor 13 is turned off, the potential ofthe node A is increased to a high level. When the thin film transistor14 is turned off, the one terminal of the capacitor 15 is brought into afloating state. Therefore, the output signal (OUT) of the inverter ismaintained at a low level.

In a period T3, the potential of the input signal (IN) is decreased to alow level, and the potential of the pulse signal (PS) is increased to ahigh level. Therefore, the thin film transistor 12 is turned off, andthe thin film transistors 13 and 14 are turned on. Thus, the node A andthe one terminal of the capacitor 15 are electrically connected to thehigh power supply potential line through the thin film transistor 11;i.e., the potential of the node A and the output signal (OUT) of theinverter are increased to a high level. Positive electric charge isstored in the one terminal of the capacitor 15.

In each of the plurality of thin film transistors included in theinverter of this embodiment, a channel formation region is formed usingan oxide semiconductor. The oxide semiconductor is an oxidesemiconductor with reduced hydrogen concentration. Specifically, thehydrogen concentration of the oxide semiconductor is 5×10¹⁹ (atoms/cm³)or less, and when there is no electric field, the oxide semiconductorserves as an insulator or a semiconductor which is close to an insulator(the semiconductor which is close to an insulator is substantially aninsulator). Therefore, off-state current of the thin film transistorhaving the channel formation region formed using the oxide semiconductorcan be reduced. Thus, the leakage of electric charge through the thinfilm transistor can be suppressed.

For example, with a channel formation region of the thin film transistor14, which is formed using the oxide semiconductor, the level of changein potential in a period where the one terminal of the capacitor 15 isin a floating state (i.e., the period T2), such as increase in potentialin the period T2, can be suppressed. Thus, a malfunction of the invertercan be prevented. Further, the period where the one terminal of thecapacitor 15 is in a floating state can be made long. In other words,the number of times of data rewriting to the capacitor 15 (also referredto as refreshing) can be reduced.

Further, a channel formation region of the thin film transistor 13 whichis formed using the oxide semiconductor can reduce a through currentwhich flows from the high power supply potential line to the low powersupply potential line in a period where the potential of the inputsignal (IN) is at a high level and the potential of the pulse signal(PS) is at a low level (i.e., the period T2). Thus, power consumption ofthe inverter can be reduced.

Note that the inverter of this embodiment is not limited to the inverterillustrated in FIG. 1A. An example of the inverter which is differentfrom the inverter illustrated in FIG. 1A is described below withreference to FIG. 1C.

The inverter illustrated in FIG. 1C includes thin film transistors 21 to24 and a capacitor 25. Here, the thin film transistor 21 is a depletiontype transistor and the thin film transistors 22 to 24 are enhancementtype transistors.

A first terminal of the thin film transistor 21 is electricallyconnected to a high power supply potential line.

A gate terminal of the thin film transistor 22 is electrically connectedto a pulse signal line, and a first terminal of the thin film transistor22 is electrically connected to a gate terminal and a second terminal ofthe thin film transistor 21.

A gate terminal of the thin film transistor 23 is electrically connectedto an input signal line, a first terminal of the thin film transistor 23is electrically connected to a second terminal of the thin filmtransistor 22, and a second terminal of the thin film transistor 23 iselectrically connected to a low power supply potential line.

A gate terminal of the thin film transistor 24 is electrically connectedto a pulse signal line, a first terminal of the thin film transistor 24is electrically connected to the second terminal of the thin filmtransistor 22 and the first terminal of the thin film transistor 23, anda second terminal of the thin film transistor 24 is electricallyconnected to an output signal line.

One terminal of the capacitor 25 is electrically connected to the secondterminal of the thin film transistor 24 and the output signal line, andthe other terminal of the capacitor 25 is electrically connected to alow power supply potential line.

To put it simply, the inverter illustrated in FIG. 1C is a circuit inwhich the thin film transistor 13 in FIG. 1A is replaced with the thinfilm transistor 22.

Next, an operation of the circuit illustrated in FIG. 1C is describedwith reference to a timing chart in FIG. 1D. Note that FIG. 1D isillustrated while a node where the second terminal of the thin filmtransistor 22, the first terminal of the thin film transistor 23, andthe first terminal of the thin film transistor 24 are electricallyconnected to each other is regarded as a node B.

In a period T4, the potentials of the input signal (IN) and the pulsesignal (PS) are increased to a high level. Therefore, the thin filmtransistors 22 to 24 are turned on. Thus, the node B and the oneterminal of the capacitor 25 are electrically connected to the low powersupply potential line; i.e., the potential of the node B and the outputsignal (OUT) of the inverter are decreased to a low level. Electriccharge is not stored in the capacitor 25.

In a period T5, the potential of the pulse signal (PS) is decreased to alow level. Therefore, the thin film transistors 22 and 24 are turnedoff. When the thin film transistor 24 is turned off, the one terminal ofthe capacitor 25 is brought into a floating state. Thus, the outputsignal (OUT) of the inverter is maintained at a low level. Note that thepotential of the node B is at a low level.

In a period T6, the potential of the input signal (IN) is decreased to alow level, and the potential of the pulse signal (PS) is increased to ahigh level. Therefore, the thin film transistor 23 is turned off, andthe thin film transistors 22 and 24 are turned on. Thus, the node B andthe one terminal of the capacitor 25 are electrically connected to thehigh power supply potential line through the thin film transistor 21;i.e., the potential of the node B and the output signal (OUT) of theinverter are increased to a high level. Positive electric charge isaccumulated in the one terminal of the capacitor 25.

In each of the plurality of thin film transistors included in theinverter illustrated in FIG. 1C, a channel formation region is formedusing an oxide semiconductor. The oxide semiconductor is an oxidesemiconductor with reduced hydrogen concentration. Specifically, thehydrogen concentration of the oxide semiconductor is 5×10¹⁹ (atoms/cm³)or less, and when there is no electric field, the oxide semiconductorserves as an insulator or a semiconductor which is close to an insulator(the semiconductor which is close to an insulator is substantially aninsulator). Therefore, off-state current of the thin film transistorhaving the channel formation region formed using the oxide semiconductorcan be reduced. Thus, the leakage of electric charge through the thinfilm transistor can be suppressed.

For example, with a channel formation region of the thin film transistor24, which is formed using the oxide semiconductor, the level of changein potential in a period where the one terminal of the capacitor 25 isin a floating state can be suppressed. Thus, a malfunction of theinverter can be prevented. Further, the period where the node B is in afloating state can be made long. In other words, the number of times ofdata rewriting to the capacitor 25 (also referred to as refreshing) canbe reduced.

Further, a channel formation region of the thin film transistor 22 whichis formed using the oxide semiconductor can reduce a through currentwhich flows from the high power supply potential line to the low powersupply potential line in a period where the potential of the inputsignal (IN) is at a high level and the potential of the pulse signal(PS) is at a low level (i.e., the period T5). Thus, power consumption ofthe inverter can be reduced.

Although a depletion type transistor is used for a thin film transistorwhich is electrically connected to the high power supply potential linein the inverter, an enhancement type transistor can be used for the thinfilm transistor. FIG. 2A is a circuit diagram in which the thin filmtransistor 11 included in the inverter illustrated in FIG. 1A isreplaced with a thin film transistor 31 which is an enhancement typetransistor. Similarly, FIG. 2B is a circuit diagram in which the thinfilm transistor 21 included in the inverter illustrated in FIG. 1C isreplaced with a thin film transistor 41 which is an enhancement typetransistor. Note that a gate terminal and a first terminal of each ofthe thin film transistors 31 and 41 are electrically connected to a highpower supply potential line.

Although a capacitor is included in each of the inverters, each of theinverters can be operated without the capacitor. FIG. 2C illustrates acircuit diagram in which the capacitor 15 is removed from the inverterillustrated in FIG. 2A. Similarly, FIG. 2D illustrates a circuit diagramin which the capacitor 25 is removed from the inverter illustrated inFIG. 2B.

This embodiment can be implemented in appropriate combination with anyof the other embodiments.

Embodiment 2

In this embodiment, examples of logic circuits are described.Specifically, examples of shift registers each including the inverter inEmbodiment 1 are described with reference to FIGS. 3A and 3B and FIGS.4A and 4B.

A shift register of this embodiment includes a plurality of pulse outputcircuits; a wiring for supplying a first clock signal (CK1), which iselectrically connected to odd-numbered pulse output circuits of theplurality of pulse output circuits (hereinafter, such a wiring is alsoreferred to as a first clock signal line); and a wiring for supplying asecond clock signal (CK2), which is electrically connected toeven-numbered pulse output circuits of the plurality of pulse outputcircuits (hereinafter, such a wiring is also referred to as a secondclock signal line). Further, an input terminal of each pulse outputcircuit is electrically connected to a wiring for supplying a startpulse signal (SP) (hereinafter, such a wiring is also referred to as astart pulse line) or an output terminal of a pulse output circuit of aprior stage.

A specific example of a circuit configuration of a pulse output circuitis described with reference to FIG. 3A. Note that pulse output circuits110, 120, and 130 are illustrated in FIG. 3A.

The pulse output circuit 110 includes thin film transisors 101 to 104and a capacitor 105. Here, the thin film transistor 101 is a depletiontype transistor, and the thin film transistors 102 to 104 areenhancement type transistors.

A first terminal of the thin film transistor 101 is electricallyconnected to a high power supply potential line.

A gate terminal of the thin film transistor 102 is electricallyconnected to a start pulse line, and a first terminal of the thin filmtransistor 102 is electrically connected to a gate terminal and a secondterminal of the thin film transistor 101.

A gate terminal of the thin film transistor 103 is electricallyconnected to a first clock signal line, a first terminal of the thinfilm transistor 103 is electrically connected to a second terminal ofthe thin film transistor 102, and a second terminal of the thin filmtransistor 103 is electrically connected to a low power supply potentialline.

A gate terminal of the thin film transistor 104 is electricallyconnected to a first clock signal line, and a first terminal of the thinfilm transistor 104 is electrically connected to the gate terminal andthe second terminal of the thin film transistor 101 and the firstterminal of the thin film transistor 102.

One terminal of the capacitor 105 is electrically connected to a secondterminal of the thin film transistor 104, and the other terminal of thecapacitor 105 is electrically connected to a low power supply potentialline.

That is, the pulse output circuit 110 illustrated in FIG. 3A is formedusing the inverter illustrated in FIG. 1A.

Note that “input terminal of the pulse output circuit 110” refers to aterminal to which a start pulse signal (SP) or an output signal of apulse output circuit of a prior stage is input, and “output terminal ofthe pulse output circuit 110” refers to a terminal from which a signalis output to a pulse input terminal of a subsequent stage. That is,here, the gate terminal of the thin film transistor 102 is electricallyconnected to the input terminal of the pulse output circuit, and thesecond terminal of the thin film transistor 104 and the one terminal ofthe capacitor 105 are electrically connected to the output terminal. Inthe case where components corresponding to the output terminal and theinput terminal are not given, the gate terminal of the thin filmtransistor 102 can be referred to as the input terminal of the pulseoutput circuit, and the second terminal of the thin film transistor 104and the one terminal of the capacitor 105 can be referred to as theoutput terminals of the pulse output circuit.

A specific circuit configuration of the pulse output circuit 120 issimilar to that of the pulse output circuit 110; thus, the descriptionis to be referred to here. Note that the pulse output circuit 120 isdifferent from the pulse output circuit 110 in that an input terminal ofthe pulse output circuit 120 is electrically connected to the outputterminal of the pulse output circuit 110 and that the second clocksignal (CK2) is input to a terminal corresponding to the terminal towhich the first clock signal (CK1) is input in the pulse output circuit110.

The circuit configurations of pulse output circuits which are subsequentto the pulse output circuit 120 are the same as those of the pulseoutput circuits 110 and 120. Therefore, the description is to bereferred to here. Further, as described above, the odd-numbered pulseoutput circuits are electrically connected to the first clock signalline and the even-numbered pulse output circuits are electricallyconnected to the second clock signal line.

Next, an operation of the circuit illustrated in FIG. 3A is describedwith reference to a timing chart of FIG. 3B. Note that specific nodes ofthe circuit in FIG. 3A are denoted by C to G for convenience, and thechange in potential of each node is referred to in order to describe thetiming chart of FIG. 3B.

In a period t1, the potential of the start pulse signal (SP) isincreased to a high level. Therefore, the thin film transistor 102 isturned on. The thin film transistor 101 is a depletion type transistorin which the gate terminal is electrically connected to the secondterminal. That is, the thin film transistor 101 is maintained in an onstate in any period. In other words, the thin film transistor 101 isused as a resistor.

In a period t2, the potential of the start pulse signal (SP) ismaintained at a high level. Therefore, the thin film transistor 102 ismaintained in an on state.

In a period t3, the potential of the first clock signal (CK1) isincreased to a high level. Therefore, the thin film transistors 103 and104 are turned on. Further, the potential of the start pulse signal (SP)is maintained at a high level. Therefore, the thin film transistor 102is maintained in an on state. Thus, the nodes C and D are electricallyconnected to the low power supply potential line; i.e., the potentialsof the nodes C and D are decreased to a low level.

In a period t4, the potential of the first clock signal (CK1) isdecreased to a low level. Therefore, the thin film transistors 103 and104 are turned off. Thus, the node C is electrically connected to thehigh power supply potential line through the thin film transistor 101,and the node D is brought into a floating state. That is, the potentialof the node C is increased to a high level, and the potential of thenode D is maintained at a low level.

In a period t5, the potential of the start pulse signal (SP) isdecreased to a low level. Therefore, the thin film transistor 102 isturned off. Further, the potential of the second clock signal (CK2) isincreased to a high level. Therefore, the thin film transistors 113 and114 are turned on. Thus, the node F is electrically connected to thehigh power supply potential line through the thin film transistor 111;i.e., the potential of the node F is increased to a high level.Therefore, the thin film transistor 122 is turned on.

In a period t6, the potential of the second clock signal (CK2) isdecreased to a low level. Therefore, the thin film transistors 113 and114 are turned off. Thus, the node F is brought into a floating state;i.e., the potentials of the nodes E and F are maintained at a highlevel.

In a period t7, the potential of the first clock signal (CK1) isincreased to a high level. Therefore, the thin film transistors 103,104, 123, and 124 are turned on. When the thin film transistor 104 isturned on, the node D is electrically connected to the high power supplypotential line through the thin film transistor 101; i.e., the potentialof the node D is increased to a high level. Therefore, the thin filmtransistor 112 is turned on. The potential of the node F is maintainedat a high level; therefore, the thin film transistor 122 is maintainedin an on state. Thus, the node G is electrically connected to the lowpower supply potential line; i.e., the potential of the node G isdecreased to a low level.

In a period t8, the potential of the first clock signal (CK1) isdecreased to a low level. Therefore, the thin film transistors 103, 104,123, and 124 are turned off. When the thin film transistor 104 is turnedoff, the node C is electrically connected to the high power supplypotential line through the thin film transistor 101, and the node D isbrought into the floating state. Thus, the nodes C and D are maintainedat a high level. When the thin film transistor 123 is turned off, thenode G is electrically connected to the high power supply potential linethrough the thin film transistor 121; i.e., the potential of the node Gis increased to a high level.

In a period t9, the potential of the second clock signal (CK2) isincreased to a high level. Therefore, the thin film transistors 113 and114 are turned on. The potential of the node D is maintained at a highlevel, so that the thin film transistor 112 is maintained in an onstate. Thus, the nodes E and F are electrically connected to the lowpower supply potential line: i.e., the potentials of the nodes E and Fare decreased to a low level. Therefore, the thin film transistor 122 isturned off. Further, the potential of the start pulse (SP) is increasedto a high level again. Note that the operation accompanying the increasein potential of the start pulse (SP) in periods subsequent to the periodis the same as the operation in periods subsequent to the period t1.Therefore, the description is to be referred to here.

In a period t10, the potential of the second clock signal (CK2) isdecreased to a low level. Therefore, the thin film transistors 113 and114 are turned off. Thus, the node F is brought into a floating state;i.e., the potential of the node F is maintained at a low level. Further,the node E is electrically connected to the high power supply potentialline through the thin film transistor 111; i.e., the potential of thenode E is increased to a high level.

Regarding the operation in periods subsequent to the period t10, theaforementioned operation is repeated. Therefore, the description is tobe referred to here.

Note that the capacitors (e.g., capacitor 105, 115, and 125) included inthe pulse output circuits are provided in order to maintain an outputsignal of each pulse output circuit.

In each of the plurality of thin film transistors included in the shiftregister of this embodiment, a channel formation region is formed usingan oxide semiconductor. The oxide semiconductor is an oxidesemiconductor with reduced hydrogen concentration. Specifically, thehydrogen concentration of the oxide semiconductor is 5×10¹⁹ (atoms/cm³)or less, and when there is no electric field, the oxide semiconductorserves as an insulator or a semiconductor which is close to an insulator(the semiconductor which is close to an insulator is substantially aninsulator). Therefore, off-state current of the thin film transistorhaving the channel formation region formed using the oxide semiconductorcan be reduced. Thus, the leakage of electric charge through the thinfilm transistor can be suppressed.

For example, with a channel formation region of the thin film transistor104, which is formed using the oxide semiconductor, the level of changein potential of the node D in a period where the node D is in a floatingstate (e.g., the periods t4 to t6), such as increase in potential in theperiods t4 to t6, can be suppressed. Thus, a malfunction of the shiftregister can be prevented. Further, the period where the node D is in afloating state can be made long. In other words, the number of times ofdata rewriting to the capacitor 105 (also referred to as refreshing) canbe reduced.

Further, a channel formation region of the thin film transistor 103which is formed using the oxide semiconductor can reduce a throughcurrent which flows from the high power supply potential line to the lowpower supply potential line in a period where the potential of the startpulse (SP) is at a high level and the potential of the first clocksignal (CK1) is at a low level (e.g., the periods t1, t2, and t4). Thus,power consumption of the shift register can be reduced.

Note that the shift register of this embodiment is not limited to theshift register illustrated in FIG. 3A. An example of the shift registerwhich is different from the shift register illustrated in FIGS. 3A and3B is described with reference to FIGS. 4A and 4B.

The shift register illustrated in FIG. 4A includes pulse output circuits210, 220, and 230. The pulse output circuit 210 includes thin filmtransisors 201 to 204 and a capacitor 205. Here, the thin filmtransistor 201 is a depletion type transistor, and the thin filmtransistors 202 to 204 are enhancement type transistors.

A first terminal of the thin film transistor 201 is electricallyconnected to a high power supply potential line.

A gate terminal of the thin film transistor 202 is electricallyconnected to a first clock signal line, and a first terminal of the thinfilm transistor 202 is electrically connected to a gate terminal and asecond terminal of the thin film transistor 201.

A gate terminal of the thin film transistor 203 is electricallyconnected to a start pulse line, a first terminal of the thin filmtransistor 203 is electrically connected to a second terminal of thethin film transistor 202, and a second terminal of the thin filmtransistor 203 is electrically connected to a low power supply potentialline.

A gate terminal of the thin film transistor 204 is electricallyconnected to a first clock signal line, and a first terminal of the thinfilm transistor 204 is electrically connected to the second terminal ofthe thin film transistor 202 and the first terminal of the thin filmtransistor 203.

One terminal of the capacitor 205 is electrically connected to a secondterminal of the thin film transistor 204, and the other terminal of thecapacitor 205 is electrically connected to a low power supply potentialline.

To put it simply, the pulse output circuit 210 illustrated in FIG. 4A isa circuit in which the thin film transistor 103 included in the pulseoutput circuit 110 in FIG. 3A is replaced with the thin film transistor202.

FIG. 4B is a timing chart illustrating an operation of the circuit inFIG. 4A. Note that specific nodes of the circuit in FIG. 4A are denotedby H to L for convenience, and the change in potential of each node isreferred to in order to describe the timing chart with reference to FIG.4B.

In a period t11, the potential of the start pulse signal (SP) isincreased to a high level. Therefore, the thin film transistor 203 isturned on. Thus, the node H is electrically connected to the low powersupply potential line; i.e., the potential of the node H is decreased toa low level.

In a period t12, the potential of the start pulse signal (SP) ismaintained at a high level. That is, the potential of the node H ismaintained at a low level.

In a period t13, the potential of the first clock signal (CK1) isincreased to a high level. Therefore, the thin film transistors 202 and204 are turned on. Further, the potential of the start pulse signal (SP)is maintained at a high level, so that the thin film transistor 203 ismaintained in an on state. Thus, the node I is electrically connected tothe low power supply potential line; i.e., the potential of the node Iis decreased to a low level.

In a period t14, the potential of the first clock signal (CK1) isdecreased to a low level. Therefore, the thin film transistors 202 and204 are turned off. Thus, the node I is brought into a floating state,so that the potential of the node I is maintained at a low level.

In a period t15, the potential of the start pulse signal (SP) isdecreased to a low level. Therefore, the thin film transistor 203 isturned off. Thus, the node H is brought into a floating state, so thatthe potential of the node H is maintained at a low level. Further, thepotential of the second clock signal (CK2) is increased to a high level.Therefore, the thin film transistors 212 and 214 are turned on. Thus,the nodes J and K are electrically connected to the high power supplypotential line through the thin film transistor 211; i.e., thepotentials of the nodes J and K are increased to a high level.Therefore, the thin film transistor 223 is turned on. Thus, the node Lis electrically connected to the low power supply potential line; i.e.,the potential of the node L is decreased to a low level.

In a period t16, the potential of the second clock signal (CK2) isdecreased to a low level. Therefore, the thin film transistors 212 and214 are turned off, so that the nodes J and K are brought into afloating state. Thus, the potentials of the nodes J and K are maintainedat a high level, and the potential of the node L is maintained at a lowlevel.

In a period t17, the potential of the first clock signal (CK1) isincreased to a high level. Therefore, the thin film transistors 202,204, 222, and 224 are turned on. When the thin film transistors 202 and204 are turned on, the nodes H and I are electrically connected to thehigh power supply potential line through the thin film transistor 201;i.e., the potentials of the nodes H and I are increased to a high level.Therefore, the thin film transistor 213 is turned on. Thus, the node Jis electrically connected to the low power supply potential line; i.e.,the potential of the node J is decreased to a low level.

In a period t18, the potential of the first clock signal (CK1) isdecreased to a low level. Therefore, the thin film transistors 202, 204,222, and 224 are turned off. When the thin film transistors 202 and 204are turned off, the nodes H and I are brought into a floating state.Thus, the potentials of the nodes H and I are maintained at a highlevel.

In a period t19, the potential of the second clock signal (CK2) isincreased to a high level. Therefore, the thin film transistors 212 and214 are turned on. Further, the potential of the node I is maintained ata high level, so that the thin film transistor 213 is maintained in anon state. Thus, the nodes J and K are electrically connected to the lowpower supply potential line; i.e., the potential of the node J ismaintained at a low level, and the potential of the node K is decreasedto a low level. Therefore, the thin film transistor 223 is turned off.Thus, the node L is electrically connected to the low power supplypotential line; i.e., the potential of the node L is maintained at a lowlevel. Further, the potential of the start pulse (SP) is increased to ahigh level again. Note that the operation accompanying the increase inpotential of the start pulse (SP) in periods subsequent to the period isthe same as the operation in periods subsequent to the period t11.Therefore, the description is to be referred to here.

In a period t20, the potential of the second clock signal (CK2) isdecreased to a low level. Therefore, the thin film transistors 212 and214 are turned off. Thus, the nodes J and K are brought into a floatingstate. As a result, the potentials of the nodes J and K are maintainedat a low level.

Regarding the operation in periods subsequent to the period t20, theaforementioned operation is repeated. Therefore, the description is tobe referred to here.

Note that the capacitors (e.g., capacitors 205, 215, and 225) includedin the pulse output circuits are provided in order to maintain an outputsignal of each pulse output circuit.

In each of the plurality of thin film transistors included in the shiftregister illustrated in FIG. 4A, a channel formation region is formedusing an oxide semiconductor. The oxide semiconductor is an oxidesemiconductor with reduced hydrogen concentration. Specifically, thehydrogen concentration of the oxide semiconductor is 5×10¹⁹ (atoms/cm³)or less, and when there is no electric field, the oxide semiconductorserves as an insulator or a semiconductor which is close to an insulator(the semiconductor which is close to an insulator is substantially aninsulator). Therefore, off-state current of the thin film transistorhaving the channel formation region formed using the oxide semiconductorcan be reduced. Thus, the leakage of electric charge through the thinfilm transistor can be suppressed.

For example, with a channel formation region of the thin film transistor204, which is formed using the oxide semiconductor, the level of changein potential in a period where the node I is in a floating state (e.g.,the periods t11, t12, t14 to t16, and t18 to t20), such as decrease ofpotential in the periods t11, t12, t19, t20, etc., can be suppressed.Thus, a malfunction of the shift register can be prevented. Further, theperiod where the node I is in a floating state can be made long. Inother words, the number of times of data rewriting to the capacitor 205(also referred to as refreshing) can be reduced.

Further, a channel formation region of the thin film transistor 202which is formed using the oxide semiconductor can reduce a throughcurrent which flows from the high power supply potential line to the lowpower supply potential line in a period where the potential of the startpulse (SP) is at a high level and the potential of the first clocksignal (CK1) is at a low level (e.g., the periods t11, t12, t14 to t16,and t18 to t20). Thus, power consumption of the shift register can bereduced.

Although a depletion type transistor is used for a thin film transistorwhich is electrically connected to the high power supply potential linein the above-described shift register, an enhancement type transistorcan alternatively be used for the thin film transistor. That is, theinverters illustrated in FIGS. 2A and 2B can be used for the pulseoutput circuits of this embodiment.

Although a capacitor is included in each of the pulse output circuits ofthe shift registers, each of the shift registers can be operated withoutthe capacitor. That is, the inverters illustrated in FIGS. 2C and 2D canbe used for the pulse output circuits of this embodiment.

This embodiment can be implemented in appropriate combination with anyof the other embodiments.

Embodiment 3

In this embodiment, an example of thin film transistors included in thelogic circuit in Embodiment 1 or Embodiment 2 is described.

One embodiment of a thin film transistor and a manufacturing method ofthe thin film transistor of this embodiment is described with referenceto FIGS. 5A and 5B and FIGS. 6A to 6E.

FIGS. 5A and 5B illustrate an example of a planar structure and across-sectional structure of a thin film transistor. A thin filmtransistor 410 illustrated in FIGS. 5A and 5B is one of top gate thinfilm transistors.

FIG. 5A is a plan view of the thin film transistor 410 having a top-gatestructure and FIG. 5B is a cross-sectional view taken along a line C1-C2in FIG. 5A.

The thin film transistor 410 includes, over a substrate 400 having aninsulating surface, an insulating layer 407, an oxide semiconductorlayer 412, a source or drain electrode layer 415 a, a source or drainelectrode layer 415 b, a gate insulating layer 402, and a gate electrodelayer 411. A wiring layer 414 a and a wiring layer 414 b are provided soas to be in contact with and electrically connected to the source ordrain electrode layer 415 a and the source or drain electrode layer 415b, respectively.

Although description is given using a single-gate thin film transistoras the thin film transistor 410, a multi-gate thin film transistorincluding a plurality of channel formation regions may be formed asneeded.

A process of manufacturing the thin film transistor 410 over thesubstrate 400 is described below with reference to FIGS. 6A to 6E.

There is no particular limitation on a substrate that can be used as thesubstrate 400 having an insulating surface as long as it has at leastheat resistance to withstand heat treatment performed later. A glasssubstrate formed using barium borosilicate glass, aluminoborosilicateglass, or the like can be used.

When the temperature of the heat treatment performed later is high, asubstrate having a strain point of 730° C. or higher is preferably usedas the glass substrate. As a material of the glass substrate, a glassmaterial such as aluminosilicate glass, aluminoborosilicate glass, orbarium borosilicate glass is used, for example. Note that by containingbarium oxide (BaO) and boron oxide (B₂O₃) so that the amount of BaO islarger than that of B₂O₃, a glass substrate is heat-resistant and ofmore practical use. Therefore, a glass substrate containing BaO thanB₂O₃ so that the amount of BaO is larger than that of B₂O₃ is preferablyused.

Note that, instead of the glass substrate described above, a substrateformed using an insulator, such as a ceramic substrate, a quartzsubstrate, or a sapphire substrate, may be used as the substrate.Alternatively, a crystallized glass or the like may be used. Stillalternatively, a plastic substrate or the like can be used asappropriate.

First, the insulating layer 407 which serves as a base film is formedover the substrate 400 having an insulating surface. As the insulatinglayer 407 in contact with the oxide semiconductor layer, an oxideinsulating layer such as a silicon oxide layer, a silicon oxynitridelayer, an aluminum oxide layer, or an aluminum oxynitride layer ispreferably used. Although a plasma CVD method, a sputtering method, orthe like can be employed as a method for forming the insulating layer407, the insulating layer 407 is preferably formed with a sputteringmethod so that hydrogen is contained in the insulating layer 407 aslittle as possible.

In this embodiment, a silicon oxide layer is formed as the insulatinglayer 407 with a sputtering method. The substrate 400 is transferred toa treatment chamber and a sputtering gas from which hydrogen andmoisture is removed and which contains high-purity oxygen is introduced,whereby a silicon oxide layer is formed as the insulating layer 407 overthe substrate 400 with the use of a silicon semiconductor target. Thesubstrate 400 may be at a room temperature or may be heated.

For example, a silicon oxide layer is formed with an RF sputteringmethod under the following condition: quartz (preferably, syntheticquartz) is used as a target; the substrate temperature is 108° C.; thedistance between the substrate and the target (the T-S distance) is 60mm; the pressure is 0.4 Pa; the electric power of the high frequencypower source is 1.5 kW; and the atmosphere is an atmosphere containingoxygen and argon (the flow ratio of oxygen to argon is 1:1 (each flowrate is 25 sccm). The thickness of the silicon oxide layer is 100 nm.Note that instead of quartz (preferably, synthetic quartz), a silicontarget can be used as a target used when the silicon oxide layer isformed. As a sputtering gas, oxygen or a mixed gas of oxygen and argonis used.

In that case, the insulating layer 407 is preferably formed whileremoving moisture remaining in the treatment chamber. This is forpreventing hydrogen, a hydroxyl group, and moisture from being containedin the insulating layer 407.

In order to remove moisture remaining in the treatment chamber, anentrapment vacuum pump is preferably used. For example, a cryopump, anion pump, or a titanium sublimation pump is preferably used. Further, anevacuation unit may be a turbo pump provided with a cold trap. In thedeposition chamber which is evacuated with the cryopump, a hydrogenatom, a compound containing a hydrogen atom, such as water (H₂O), andthe like are evacuated, whereby the concentration of an impurity in theinsulating layer 407 formed in the deposition chamber can be reduced.

It is preferable to use a high-purity gas from which an impurity such ashydrogen, water, a hydroxyl group, or hydride is removed to aconcentration expressed by a level of ppm or ppb, as a sputtering gasused when the insulating layer 407 is formed.

Examples of a sputtering method include an RF sputtering method in whicha high-frequency power source is used as a sputtering power source, a DCsputtering method in which a DC power source is used, and a pulsed DCsputtering method in which a bias is applied in a pulsed manner. An RFsputtering method is mainly used in the case where an insulating film isformed, and a DC sputtering method is mainly used in the case where ametal film is formed.

In addition, there is also a multi-source sputtering apparatus in whicha plurality of targets of different materials can be set. With themulti-source sputtering apparatus, films of different materials can beformed to be stacked in the same chamber, or plural kinds of materialscan be discharged for film formation at the same time in the samechamber.

In addition, there are a sputtering apparatus provided with a magnetsystem inside the chamber, which is for a magnetron sputtering method,and a sputtering apparatus which is used for an ECR sputtering method inwhich plasma produced with the use of microwaves is used without usingglow discharge.

Furthermore, as a deposition method using a sputtering method, there arealso a reactive sputtering method in which a target substance and asputtering gas component are chemically reacted with each other duringdeposition to form a thin compound film thereof, and a bias sputteringmethod in which voltage is also applied to a substrate duringdeposition.

Further, the insulating layer 407 may have a layered structure in whichfor example, a nitride insulating layer such as a silicon nitride layer,a silicon nitride oxide layer, an aluminum nitride layer, or an aluminumnitride oxide layer and an oxide insulating layer are stacked in thisorder from the substrate 400 side.

For example, a sputtering gas from which hydrogen and moisture areremoved and which contains high-purity nitrogen is introduced and asilicon target is used, whereby a silicon nitride layer is formedbetween a silicon oxide layer and a substrate. In this case, the siliconnitride layer is preferably formed while removing moisture remaining ina treatment chamber, similarly to the silicon oxide layer.

In the case of forming the silicon nitride layer, a substrate may beheated in film formation.

In the case where the stack of the silicon nitride layer and the siliconoxide layer is provided as the insulating layer 407, the silicon nitridelayer and the silicon oxide layer can be formed with the use of a commonsilicon target in the same treatment chamber. After a sputtering gascontaining nitrogen is introduced first, a silicon nitride layer isformed using a silicon target mounted in the treatment chamber, andthen, the sputtering gas is switched to a sputtering gas containingoxygen and the same silicon target is used to form a silicon oxidelayer. Since the silicon nitride layer and the silicon oxide layer canbe formed successively without being exposed to the air, impurities suchas hydrogen and moisture can be prevented from adsorbing onto a surfaceof the silicon nitride layer.

Then, an oxide semiconductor film is formed to a thickness of 2 nm to200 nm inclusive over the gate insulating layer 407.

Further, in order that hydrogen, a hydroxyl group, and moisture becontained in the oxide semiconductor layer as little as possible, it ispreferable that the substrate 400 over which the insulating layer 407 isformed be preheated in a preheating chamber of a sputtering apparatus aspretreatment for film formation so that impurities such as hydrogen andmoisture adsorbed to the substrate 400 are eliminated and evacuated.Note that a cryopump is preferable as an evacuation unit provided in thepreheating chamber. Note that this preheating treatment may be omitted.Further, this preheating may be similarly performed on the substrate 400over which the gate insulating layer 402 has not been formed and thesubstrate 400 over which layers up to the source or drain electrodelayer 415 a and the source or drain electrode layer 415 b have beenformed.

Note that before the oxide semiconductor layer is formed with asputtering method, dust attached to a surface of the insulating layer407 is preferably removed with reverse sputtering in which an argon gasis introduced and plasma is generated. The reverse sputtering refers toa method in which without application of a voltage to the target side, ahigh frequency power source is used for application of a voltage to thesubstrate side in an argon atmosphere so that plasma is generated tomodify a surface of the substrate. Note that instead of an argonatmosphere, a nitrogen atmosphere, a helium atmosphere, an oxygenatmosphere, or the like may be used.

The oxide semiconductor layer is formed with a sputtering method. Theoxide semiconductor layer is formed using an In—Ga—Zn—O-based oxidesemiconductor layer, an In—Sn—Zn—O-based oxide semiconductor layer, anIn—Al—Zn—O-based oxide semiconductor layer, a Sn—Ga—Zn—O-based oxidesemiconductor layer, an Al—Ga—Zn—O-based oxide semiconductor layer, aSn—Al—Zn—O-based oxide semiconductor layer, an In—Zn—O-based oxidesemiconductor layer, a Sn—Zn—O-based oxide semiconductor layer, anAl—Zn—O-based oxide semiconductor layer, an In—O-based oxidesemiconductor layer, a Sn—O-based oxide semiconductor layer, or aZn—O-based oxide semiconductor layer. In this embodiment, the oxidesemiconductor layer is formed with a sputtering method with the use ofan In—Ga—Zn—O-based metal oxide target. Further, the oxide semiconductorlayer can be formed with a sputtering method in a rare gas (typically,argon) atmosphere, an oxygen atmosphere, or a mixed atmospherecontaining a rare gas (typically, argon) and oxygen. In the case ofemploying a sputtering method, a target containing SiO₂ at 2 wt % to 10wt % inclusive may be used for film formation.

It is preferable to use a high-purity gas from which an impurity such ashydrogen, water, a hydroxyl group, or hydride is removed to aconcentration expressed by a level of ppm or ppb, as a sputtering gasused when the oxide semiconductor layer is formed.

As a target for forming the oxide semiconductor layer with a sputteringmethod, a metal oxide target containing zinc oxide as its main componentcan be used. As another example of a metal oxide target, a metal oxidetarget containing In, Ga, and Zn (in a composition ratio,In₂O₃:Ga₂O₃:ZnO=1:1:1 [mol], In:Ga:Zn=1:1:0.5 [atom]) can be used.Alternatively, a metal oxide target containing In, Ga, and Zn (thecomposition ratio of In:Ga:Zn=1:1:1 or 1:1:2 [atom]) may be used. Theproportion of the volume of a portion except for an area occupied by aspace and the like with respect to the total volume of the metal oxidetarget formed (also referred to as the fill rate of the metal oxidetarget) is 90% to 100% inclusive, preferably, 95% to 99.9% inclusive.With the use of the metal oxide target with high fill rate, a denseoxide semiconductor layer is formed.

The substrate is held in a treatment chamber kept under reducedpressure, a sputtering gas from which hydrogen and moisture are removedis introduced into the treatment chamber from which remaining moistureis being removed, and the oxide semiconductor layer is formed over thesubstrate 400 with the use of a metal oxide as a target. To removemoisture remaining in the treatment chamber, an entrapment vacuum pumpis preferably used. For example, a cryopump, an ion pump, or a titaniumsublimation pump is preferably used. Further, an evacuation unit may bea turbo pump provided with a cold trap. In the deposition chamber whichis evacuated with the cryopump, a hydrogen atom, a compound containing ahydrogen atom, such as water (H₂O), (more preferably, also a compoundcontaining a carbon atom), and the like are evacuated, whereby theconcentration of an impurity in the oxide semiconductor layer formed inthe deposition chamber can be reduced. The substrate may be heated whenthe oxide semiconductor layer is formed.

An example of the deposition condition is as follows: the substratetemperature is room temperature, the distance between the substrate andthe target is 60 mm, the pressure is 0.4 Pa, the electric power of theDC power source is 0.5 kW, and the atmosphere is an atmospherecontaining oxygen and argon (the flow ratio of oxygen to argon is 15sccm:30 sccm). It is preferable that a pulsed DC power source be usedbecause powder substances (also referred to as particles or dust)generated in film formation can be reduced and the film thickness can beuniform. The oxide semiconductor layer preferably has a thickness of 5nm to 30 nm inclusive. Note that the appropriate thickness depends on anoxide semiconductor material used and the thickness may be selected inaccordance with a material.

Then, in a first photolithography process, the oxide semiconductor layeris processed into an island-shaped oxide semiconductor layer 412 (seeFIG. 6A). A resist mask for forming the island-shaped oxidesemiconductor layer 412 may be formed with an inkjet method. When theresist mask is formed with an inkjet method, a photomask is not used;therefore, manufacturing costs can be reduced.

Note that the etching of the oxide semiconductor layer may be dryetching, wet etching, or both dry etching and wet etching.

As the etching gas for dry etching, a gas containing chlorine(chlorine-based gas such as chlorine (Cl₂), boron chloride (BCl₃),silicon chloride (SiCl₄), or carbon tetrachloride (CCl₄)) is preferablyused.

Alternatively, a gas containing fluorine (fluorine-based gas such ascarbon tetrafluoride (CF₄), sulfur fluoride (SF₆), nitrogen fluoride(NF₃), or trifluoromethane (CHF₃)); hydrogen bromide (HBr); oxygen (O₂);any of these gases to which a rare gas such as helium (He) or argon (Ar)is added; or the like can be used.

As the dry etching method, a parallel plate RIE (reactive ion etching)method or an ICP (inductively coupled plasma) etching method can beused. In order to etch the film into a desired shape, the etchingcondition (the amount of electric power applied to a coil-shapedelectrode, the amount of electric power applied to an electrode on thesubstrate side, the temperature of the electrode on the substrate side,or the like) is adjusted as appropriate.

As an etchant used for wet etching, a mixed solution of phosphoric acid,acetic acid, and nitric acid, or the like can be used. Alternatively,ITO07N (produced by KANTO CHEMICAL CO., INC.) may be used.

The etchant used in the wet etching is removed by cleaning together withthe material which is etched off. The waste liquid including the etchantand the material etched off may be purified and the material may bereused. When a material such as indium included in the oxidesemiconductor layer is collected from the waste liquid after the etchingand reused, the resources can be efficiently used and the cost can bereduced.

The etching conditions (such as an etchant, etching time, andtemperature) are appropriately adjusted depending on the material sothat the oxide semiconductor layer can be etched to have a desiredshape.

In this embodiment, the oxide semiconductor layer is processed into theisland-shaped oxide semiconductor layer 412 with a wet etching methodwith a mixed solution of phosphoric acid, acetic acid, and nitric acidas an etchant.

In this embodiment, the oxide semiconductor layer 412 is subjected tofirst heat treatment. The temperature of the first heat treatment ishigher than or equal to 400° C. and lower than or equal to 750° C.,preferably higher than or equal to 400° C. and lower than the strainpoint of the substrate. Here, the substrate is introduced into anelectric furnace which is one of heat treatment apparatuses, heattreatment is performed on the oxide semiconductor layer in a nitrogenatmosphere at 450° C. for one hour, and then, the oxide semiconductorlayer is not exposed to the air so that entry of water and hydrogen intothe oxide semiconductor layer is prevented; thus, the oxidesemiconductor layer is obtained. Through the first heat treatment,dehydration or dehydrogenation of the oxide semiconductor layer 412 canbe conducted.

The apparatus for the heat treatment is not limited to the electricfurnace and may be the one provided with a device for heating an objectto be processed, using heat conduction or heat radiation from a heatingelement such as a resistance heating element. For example, an RTA (rapidthermal anneal) apparatus such as a GRTA (gas rapid thermal anneal)apparatus or an LRTA (lamp rapid thermal anneal) apparatus can be used.An LRTA apparatus is an apparatus for heating an object to be processedby radiation of light (an electromagnetic wave) emitted from a lamp suchas a halogen lamp, a metal halide lamp, a xenon arc lamp, a carbon arclamp, a high pressure sodium lamp, or a high pressure mercury lamp. AGRTA apparatus is an apparatus for heat treatment using ahigh-temperature gas. As the gas, an inert gas which hardly reacts withan object to be processed due to heat treatment, such as nitrogen or arare gas such as argon is used.

For example, as the first heat treatment, GRTA may be performed asfollows. The substrate is transferred and put in an inert gas which hasbeen heated to a high temperature of 650° C. to 700° C., heated forseveral minutes, and transferred and taken out of the inert gas whichhas been heated to a high temperature. GRTA enables high-temperatureheat treatment in a short time.

Note that in the first heat treatment, it is preferable that water,hydrogen, and the like be not included in nitrogen or a rare gas such ashelium, neon, or argon. Alternatively, it is preferable that nitrogen ora rare gas such as helium, neon, or argon introduced into an apparatusfor the heat treatment have a purity of 6N (99.9999%) or more,preferably, 7N (99.99999%) or more (that is, an impurity concentrationis set to 1 ppm or lower, preferably, 0.1 ppm or lower).

Further, the oxide semiconductor layer might be crystallized to be amicrocrystalline film or a polycrystalline film depending on a conditionof the first heat treatment or a material of the oxide semiconductorlayer 412. For example, the oxide semiconductor layer may becrystallized to become a microcrystalline oxide semiconductor layerhaving a degree of crystallization of 90% or more, or 80% or more.Further, depending on the condition of the first heat treatment and thematerial of the oxide semiconductor layer 412, the oxide semiconductorlayer may become an amorphous oxide semiconductor layer containing nocrystalline component. The oxide semiconductor layer might become anoxide semiconductor layer in which a microcrystalline portion (with agrain diameter greater than or equal to 1 nm and less than or equal to20 nm, typically greater than or equal to 2 nm and less than or equal to4 nm) is mixed into an amorphous oxide semiconductor.

Alternatively, the first heat treatment may be performed on the oxidesemiconductor layer which has not yet been processed into theisland-shaped oxide semiconductor layer 412. In that case, after thefirst heat treatment, the substrate is taken out of the heatingapparatus and a photolithography process is performed.

The heat treatment having an effect of dehydration or dehydrogenation onthe oxide semiconductor layer may be performed at any of the followingtimings: after the oxide semiconductor layer is formed; after a sourceelectrode layer and a drain electrode layer are formed over the oxidesemiconductor layer 412; and after a gate insulating layer is formedover the source electrode layer and the drain electrode layer.

Next, a conductive layer is formed over the insulating layer 407 and theoxide semiconductor layer 412. The conductive layer may be formed with,for example, a sputtering method or a vacuum evaporation method. As thematerial of the conductive layer, there are an element selected from Al,Cr, Cu, Ta, Ti, Mo, or W; an alloy including any of the above elements;and the like. Further, one or more materials selected from manganese,magnesium, zirconium, beryllium, and thorium may be used. The conductivelayer may have a single-layer structure or a layered structure of two ormore layers. For example, a single-layer structure of an aluminum layerincluding silicon, a two-layer structure in which a titanium layer isstacked over an aluminum layer, a three-layer structure in which a Tilayer, an aluminum layer, and a Ti layer are stacked in the orderpresented, and the like can be given. Alternatively, a layer, an alloylayer, or a nitride layer of a combination of Al and one or plurality ofelements selected from the followings may be used: titanium (Ti),tantalum (Ta), tungsten (W), molybdenum (Mo), chromium (Cr), neodymium(Nd), and scandium (Sc).

A second photolithography process is performed. A resist mask is formedover the conductive layer and selective etching is performed, so thatthe source or drain electrode layer 415 a and the source or drainelectrode layer 415 b are formed. Then, the resist mask is removed (seeFIG. 6B). Note that the source electrode layer and the drain electrodelayer preferably have tapered shapes because coverage with the gateinsulating layer stacked thereover can be improved.

In this embodiment, a titanium layer is formed to a thickness of 150 nmwith a sputtering method for the source or drain electrode layer 415 aand the source or drain electrode layer 415 b.

Note that materials and etching conditions are adjusted as appropriateso that the oxide semiconductor layer 412 is not removed and theinsulating layer 407 under the oxide semiconductor layer 412 is notexposed when the conductive layer is etched.

In this embodiment, a Ti layer is used as the conductive film, anIn—Ga—Zn—O-based oxide semiconductor is used as the oxide semiconductorlayer 412, and an ammonia hydrogen peroxide solution (a mixture ofammonia, water, and a hydrogen peroxide solution) is used as an etchant.

Note that in the second photolithography process, only part of the oxidesemiconductor layer 412 is etched, whereby an oxide semiconductor layerhaving a groove (a depressed portion) might be formed. The resist maskused for forming the source or drain electrode layer 415 a and thesource or drain electrode layer 415 b may be formed with an inkjetmethod. When the resist mask is formed with an inkjet method, aphotomask is not used; therefore, manufacturing costs can be reduced.

Ultraviolet, a KrF laser beam, or an ArF laser beam is used for lightexposure for forming the resist mask in the second photolithographyprocess. A channel length L of the thin film transistor to be formedlater depends on a width of an interval between a bottom portion of thesource electrode layer and a bottom portion of the drain electrode layerwhich are adjacent to each other over the oxide semiconductor layer 412.Note that when light exposure is performed in the case where the channellength L is shorter than 25 nm, extreme ultraviolet with extremely shortwavelengths of several nanometers to several tens of nanometers is usedfor light exposure for forming the resist mask in the secondphotolithography process. Light exposure with extreme ultraviolet leadsto a high resolution and a large focal depth. Accordingly, the channellength L of the thin film transistor to be formed later can be set to 10nm to 1000 nm inclusive. Thus, the operation speed of a circuit can beincreased, and further, an off-state current can be significantly smallso that low power consumption can be achieved.

Next, a gate insulating layer 402 is formed over the insulating layer407, the oxide semiconductor layer 412, the source or drain electrodelayer 415 a, and the source or drain electrode layer 415 b (see FIG.6C).

The gate insulating layer 402 can be formed with a single-layerstructure or a layered structure using any of a silicon oxide layer, asilicon nitride layer, a silicon oxynitride layer, a silicon nitrideoxide layer, and an aluminum oxide layer with a plasma CVD method, asputtering method, or the like. Note that the gate insulating layer 402is preferably formed with a sputtering method so that the gateinsulating layer 402 contains hydrogen as little as possible. In thecase where a silicon oxide layer is formed with a sputtering method, asilicon target or a quartz target is used as a target and oxygen or amixed gas of oxygen and argon is used as a sputtering gas.

The gate insulating layer 402 may have a structure where a silicon oxidelayer and a silicon nitride layer are stacked from the side of thesource or drain electrode layer 415 a and the source or drain electrodelayer 415 b. For example, a silicon oxide layer (SiO_(x) (x>0)) with athickness of 5 nm to 300 nm inclusive is formed as a first gateinsulating layer and a silicon nitride layer (SiN_(y) (y>0)) with athickness of 50 nm to 200 nm inclusive is stacked as a second gateinsulating layer over the first gate insulating layer; thus, the gateinsulating layer with a thickness of 100 nm may be formed. In thisembodiment, a silicon oxide layer is formed to a thickness of 100 nmwith an RF sputtering method under the following condition: the pressureis 0.4 Pa; the electric power of the high frequency power source is 1.5kW; and the atmosphere is an atmosphere containing oxygen and argon (theflow ratio of oxygen to argon is 1:1 (each flow rate is 25 sccm).

Then, a third photolithography process is performed. A resist mask isformed and selective etching is performed to remove parts of the gateinsulating layer 402, so that openings 421 a and 421 b reaching thesource or drain electrode layer 415 a and the source or drain electrodelayer 415 b, respectively, are formed (see FIG. 6D).

Then, after a conductive layer is formed over the gate insulating layer402 and in the openings 421 a and 421 b, the gate electrode layer 411and the wiring layers 414 a and 414 b are formed in a fourthphotolithography process. Note that a resist mask may be formed with aninkjet method. When the resist mask is formed with an inkjet method, aphotomask is not used; therefore, manufacturing costs can be reduced.

Further, the gate electrode layer 411 and the wiring layers 414 a and414 b can be formed with a single-layer structure or a layered structureusing any of metal materials such as molybdenum, titanium, chromium,tantalum, tungsten, aluminum, copper, neodymium, and scandium, and analloy material including any of these materials as a main component.

As a two-layer structure of each of the gate electrode layer 411 and thewiring layers 414 a and 414 b, for example, a two-layer structure inwhich a molybdenum layer is stacked over an aluminum layer, a two-layerstructure in which a molybdenum layer is stacked over a copper layer, atwo-layer structure in which a titanium nitride layer or a tantalumnitride layer is stacked over a copper layer, or a two-layer structurein which a titanium nitride layer and a molybdenum layer are stacked ispreferable. As a three-layer structure, a stack of a tungsten layer or atungsten nitride layer, an alloy layer of aluminum and silicon or analloy layer of aluminum and titanium, and a titanium nitride layer or atitanium layer is preferable. Note that the gate electrode layer may beformed using a light-transmitting conductive layer. A light-transmittingconductive oxide can be given as an example of the light-transmittingconductive layer.

In this embodiment, a titanium layer is formed to a thickness of 150 nmwith a sputterirng method for the gate electrode layer 411 and thewiring layers 414 a and 414 b.

Next, second heat treatment (preferably 200° C. to 400° C. inclusive,for example, from 250° C. to 350° C. inclusive) is performed in an inertgas atmosphere or an oxygen gas atmosphere. In this embodiment, thesecond heat treatment is performed in a nitrogen atmosphere at 250° C.for one hour. The second heat treatment may be performed after aprotective insulating layer or a planarization insulating layer isformed over the thin film transistor 410.

Further, heat treatment may be performed at 100° C. to 200° C. inclusivefor one hour to 30 hours inclusive in the air. This heat treatment maybe performed at a fixed heating temperature. Alternatively, thefollowing change in the heating temperature may be conducted pluraltimes repeatedly: the heating temperature is increased from a roomtemperature to a temperature of 100° C. to 200° C. inclusive and thendecreased to a room temperature. Further, this heat treatment may beperformed under a reduced pressure. Under a reduced pressure, theheating time can be shortened.

Through the above steps, the thin film transistor 410 including theoxide semiconductor layer 412 in which the concentration of hydrogen,moisture, hydride, or hydroxide is reduced can be formed (see FIG. 6E).The thin film transistor 410 can be used as the thin film transistorincluded in the logic circuit in Embodiment 1 or Embodiment 2.

A protective insulating layer or a planarization insulating layer forplanarization may be provided over the thin film transistor 410. Forexample, the protective insulating layer may be formed with asingle-layer structure or a layered structure using any of a siliconoxide layer, a silicon nitride layer, a silicon oxynitride layer, asilicon nitride oxide layer, and an aluminum oxide layer.

Although not illustrated, the planarization insulating layer can beformed using a heat-resistant organic material such as polyimide, anacrylic resin, a benzocyclobutene resin, polyamide, or an epoxy resin.Other than such organic materials, it is also possible to use alow-dielectric constant material (a low-k material), a siloxane-basedresin, PSG (phosphosilicate glass), BPSG (borophosphosilicate glass), orthe like. Note that the planarization insulating layer may be formed bystacking a plurality of insulating layers formed using any of thesematerials.

Note that a siloxane-based resin corresponds to a resin including aSi—O—Si bond formed using a siloxane-based material as a startingmaterial. The siloxane-based resin may include an organic group (e.g.,an alkyl group or an aryl group) or a fluoro group as a substituent.Moreover, the organic group may include a fluoro group.

There is no particular limitation on the method of forming theplanarization insulating layer, and the following method or means can beemployed depending on the material: a method such as a sputteringmethod, an SOG method, a spin coating method, a dipping method, a spraycoating method, or a droplet discharge method (e.g., an inkjet method,screen printing, or offset printing), or a tool such as a doctor knife,a roll coater, a curtain coater, or a knife coater.

Moisture remaining in a reaction atmosphere is removed as describedabove in forming the oxide semiconductor layer, whereby theconcentration of hydrogen and hydride in the oxide semiconductor layercan be reduced. Accordingly, the oxide semiconductor layer can bestable.

The logic circuits in Embodiments 1 and 2 including the above-describedthin film transistors can have stable electric characteristics and highreliability.

This embodiment can be implemented in appropriate combination with theother embodiments.

Embodiment 4

In this embodiment, another example of thin film transistors included inthe logic circuit in Embodiment 1 or Embodiment 2 is described. The sameportions as those in Embodiment 3 and portions having functions similarto those of the portions in Embodiment 3 and steps similar to those inEmbodiment 3 may be handled as in Embodiment 3, and repeated descriptionis omitted. In addition, detailed description of the same portions isalso omitted.

One embodiment of a thin film transistor and a manufacturing method ofthe thin film transistor of this embodiment is described with referenceto FIGS. 7A and 7B and FIGS. 8A to 8E.

FIGS. 7A and 7B illustrate an example of a planar structure and across-sectional structure of a thin film transistor. A thin filmtransistor 460 illustrated in FIGS. 7A and 7B is one of top gate thinfilm transistors.

FIG. 7A is a plan view of the thin film transistor 460 having a top-gatestructure and FIG. 7B is a cross-sectional view taken along a line D1-D2in FIG. 7A.

The thin film transistor 460 includes, over a substrate 450 having aninsulating surface, an insulating layer 457, a source or drain electrodelayer 465 a (465 a 1 and 465 a 2), an oxide semiconductor layer 462, asource or drain electrode layer 465 b, a wiring layer 468, a gateinsulating layer 452, and a gate electrode layer 461 (461 a and 461 b).The source or drain electrode layer 465 a (465 a 1 and 465 a 2) iselectrically connected to a wiring layer 464 through the wiring layer468. Although not illustrated, the source or drain electrode layer 465 bis electrically connected to a wiring layer through an opening formed inthe gate insulating layer 452.

A process of manufacturing the thin film transistor 460 over thesubstrate 450 is described below with reference to FIGS. 8A to 8E.

First, the insulating layer 457 which serves as a base film is formedover the substrate 450 having an insulating surface.

In this embodiment, a silicon oxide layer is formed as the insulatinglayer 457 with a sputtering method. The substrate 450 is transferred toa treatment chamber and a sputtering gas from which hydrogen andmoisture is removed and which contains high-purity oxygen is introduced,whereby a silicon oxide layer is formed as the insulating layer 457 overthe substrate 450 with the use of a silicon target or a quartz(preferably synthetic quartz). As a sputtering gas, oxygen or a mixedgas of oxygen and argon is used.

For example, a silicon oxide layer is formed with an RF sputteringmethod under the following condition: the purity of a sputtering gas is6N; quartz (preferably, synthetic quartz) is used; the substratetemperature is 108° C.; the distance between the substrate and thetarget (the T-S distance) is 60 mm; the pressure is 0.4 Pa; the electricpower of the high frequency power source is 1.5 kW; and the atmosphereis an atmosphere containing oxygen and argon (the flow ratio of oxygento argon is 1:1 (each flow rate is 25 sccm). The thickness of thesilicon oxide layer is 100 nm. Note that instead of quartz (preferably,synthetic quartz), a silicon target can be used as a target used whenthe silicon oxide layer is formed.

In that case, the insulating layer 457 is preferably formed whileremoving moisture remaining in the treatment chamber. This is forpreventing hydrogen, a hydroxyl group, and moisture from being containedin the insulating layer 457. In the deposition chamber which isevacuated with a cryopump, a hydrogen atom, a compound containing ahydrogen atom, such as water (H₂O), and the like are evacuated, wherebythe concentration of an impurity in the insulating layer 457 formed inthe deposition chamber can be reduced.

It is preferable to use a high-purity gas from which an impurity such ashydrogen, water, a hydroxyl group, or hydride is removed to aconcentration expressed by a level of ppm or ppb, as a sputtering gasused when the insulating layer 457 is formed.

Further, the insulating layer 457 may have a layered structure in whichfor example, a nitride insulating layer such as a silicon nitride layer,a silicon nitride oxide layer, an aluminum nitride layer, or an aluminumnitride oxide layer and an oxide insulating layer are stacked in thisorder from the substrate 450 side.

For example, a sputtering gas from which hydrogen and moisture areremoved and which contains high-purity nitrogen is introduced and asilicon target is used, whereby a silicon nitride layer is formedbetween a silicon oxide layer and a substrate. In this case, the siliconnitride layer is preferably formed while removing remaining moisture ina treatment chamber, similarly to the silicon oxide layer.

Next, a conductive layer is formed over the insulating layer 457 and afirst photolithography process is performed. A resist mask is formedover the conductive layer and selective etching is performed, so thatthe source or drain electrode layer 465 a 1 and 465 a 2 is formed. Then,the resist mask is removed (see FIG. 8A). It seems in cross section asif the source or drain electrode layer 465 a 1 and 465 a 2 is divided;however, the source or drain electrode layer 465 a 1 and 465 a 2 is acontinuous layer. Note that the source electrode layer and the drainelectrode layer preferably have tapered shapes because coverage with thegate insulating layer stacked thereover can be improved.

As the material of the source or drain electrode layer 465 a 1 and 465 a2, there are an element selected from Al, Cr, Cu, Ta, Ti, Mo, or W; analloy including any of the above elements; and the like. Further, one ormore materials selected from manganese, magnesium, zirconium, beryllium,and thorium may be used. The conductive layer may have a single-layerstructure or a layered structure of two or more layers. For example, asingle-layer structure of an aluminum layer including silicon, atwo-layer structure in which a titanium layer is stacked over analuminum layer, a three-layer structure in which a Ti layer, an aluminumlayer, and a Ti layer are stacked in the order presented, and the likecan be given. Alternatively, a layer, an alloy layer, or a nitride layerof a combination of Al and one or plurality of elements selected fromthe followings may be used: titanium (Ti), tantalum (Ta), tungsten (W),molybdenum (Mo), chromium (Cr), neodymium (Nd), and scandium (Sc).

In this embodiment, a titanium layer is formed to a thickness of 150 nmwith a sputtering method for the source or drain electrode layer 465 a 1and 465 a 2.

Then, an oxide semiconductor layer is formed to a thickness of 2 nm to200 nm inclusive over the gate insulating layer 457 and the source ordrain electrode layer 465 a 1 and 465 a 2.

Then, an oxide semiconductor layer is formed and in a secondphotolithography process, the oxide semiconductor layer is processedinto an island-shaped oxide semiconductor layer 462 (see FIG. 8B). Inthis embodiment, the oxide semiconductor layer is formed with asputtering method with the use of an In—Ga—Zn—O-based metal oxidetarget.

The substrate is held in a treatment chamber kept under reducedpressure, a sputtering gas from which hydrogen and moisture are removedis introduced into the treatment chamber from which remaining moistureis being removed, and the oxide semiconductor layer is deposited overthe substrate 450 with the use of a metal oxide as a target. To removemoisture remaining in the treatment chamber, an entrapment vacuum pumpis preferably used. For example, a cryopump, an ion pump, or a titaniumsublimation pump is preferably used. Further, an evacuation unit may bea turbo pump provided with a cold trap. In the deposition chamber whichis evacuated with the cryopump, a hydrogen atom, a compound containing ahydrogen atom, such as water (H₂O), (more preferably, also a compoundcontaining a carbon atom), and the like are evacuated, whereby theconcentration of an impurity in the oxide semiconductor layer formed inthe deposition chamber can be reduced. The substrate may be heated whenthe oxide semiconductor layer is formed.

It is preferable to use a high-purity gas from which an impurity such ashydrogen, water, a hydroxyl group, or hydride is removed to aconcentration expressed by a level of ppm or ppb, as a sputtering gasused when the oxide semiconductor layer is formed.

An example of the deposition condition is as follows: the substratetemperature is room temperature, the distance between the substrate andthe target is 60 mm, the pressure is 0.4 Pa, the electric power of theDC power source is 0.5 kW, and the atmosphere is an atmospherecontaining oxygen and argon (the flow ratio of oxygen to argon is 15sccm:30 sccm). It is preferable that a pulsed DC power source be usedbecause powder substances (also referred to as particles or dust)generated in film formation can be reduced and the film thickness can beuniform. The oxide semiconductor layer preferably has a thickness of 5nm to 30 nm inclusive. Note that the appropriate thickness depends on anoxide semiconductor material used and the thickness may be selected inaccordance with a material.

In this embodiment, the oxide semiconductor layer is processed into theisland-shaped oxide semiconductor layer 462 with a wet etching methodwith a mixed solution of phosphoric acid, acetic acid, and nitric acidas an etchant.

Next, the oxide semiconductor layer 462 is subjected to first heattreatment. The temperature of first heat treatment for the first heattreatment is higher than or equal to 400° C. and lower than or equal to750° C., preferably higher than or equal to 400° C. and lower than thestrain point of the substrate. Here, the substrate is introduced into anelectric furnace which is one of heat treatment apparatuses, heattreatment is performed on the oxide semiconductor layer in a nitrogenatmosphere at 450° C. for one hour, and then, the oxide semiconductorlayer is not exposed to the air so that entry of water and hydrogen intothe oxide semiconductor layer is prevented; thus, the oxidesemiconductor layer is obtained. Through the first heat treatment,dehydration or dehydrogenation of the oxide semiconductor layer 462 canbe conducted.

The apparatus for the heat treatment is not limited to the electricfurnace and may be the one provided with a device for heating an objectto be processed, using heat conduction or heat radiation from a heatingelement such as a resistance heating element. For example, an RTA (rapidthermal anneal) apparatus such as a GRTA (gas rapid thermal anneal)apparatus or an LRTA (lamp rapid thermal anneal) apparatus can be used.For example, as the first heat treatment, GRTA may be performed asfollows. The substrate is transferred and put in an inert gas which hasbeen heated to a high temperature of 650° C. to 700° C., heated forseveral minutes, and transferred and taken out of the inert gas whichhas been heated to a high temperature. GRTA enables high-temperatureheat treatment in a short time.

Note that in the first heat treatment, it is preferable that water,hydrogen, and the like be not included in nitrogen or a rare gas such ashelium, neon, or argon. Alternatively, it is preferable that nitrogen ora rare gas such as helium, neon, or argon introduced into an apparatusfor the heat treatment have a purity of 6N (99.9999%) or more,preferably, 7N (99.99999%) or more (that is, an impurity concentrationis set to 1 ppm or lower, preferably, 0.1 ppm or lower).

Further, the oxide semiconductor layer might be crystallized to be amicrocrystalline layer or a polycrystalline layer depending on acondition of the first heat treatment or a material of the oxidesemiconductor layer.

Alternatively, the first heat treatment of the oxide semiconductor layermay be performed on the oxide semiconductor layer which has not yet beenprocessed into the island-shaped oxide semiconductor layer. In thatcase, after the first heat treatment, the substrate is taken out of theheating apparatus and a photolithography process is performed.

The heat treatment has an effect of dehydration or dehydrogenation onthe oxide semiconductor layer may be performed at any of the followingtimings: after the oxide semiconductor layer is formed; after a sourceelectrode layer and a drain electrode layer are formed over the oxidesemiconductor layer; and after a gate insulating layer is formed overthe source electrode layer and the drain electrode layer.

Next, a conductive layer is formed over the insulating layer 457 and theoxide semiconductor layer 462 and a third photolithography process isperformed. A resist mask is formed over the conductive layer andselective etching is performed, so that the source or drain electrodelayer 465 b and the wiring layer 468 are formed. Then, the resist maskis removed (see FIG. 8C). The source or drain electrode layer 465 b andthe wiring layer 468 may be formed using a material and steps similar tothose of the source or drain electrode layer 465 a 1 and 465 a 2.

In this embodiment, a titanium layer is formed to a thickness of 150 nmwith a sputtering method for the source or drain electrode layer 465 band the wiring layer 468. In this embodiment, the same titanium layer isused for the source or drain electrode layer 465 a 1 and 465 a 2 and thesource or drain electrode layer 465 b, so that the etching selectivityof the source or drain electrode layer 465 a 1 and 465 a 2 is the sameas or substantially the same as that of the source or drain electrodelayer 465 b. Therefore, the wiring layer 468 is provided over a portionof the source or drain electrode layer 465 a 2, which is not coveredwith the oxide semiconductor layer 462, to prevent the source or drainelectrode layer 465 a 1 and 465 a 2 from being etched when the source ordrain electrode layer 465 b is etched. In the case of using differentmaterials which provide high selectivity ratio of the source or drainelectrode layer 465 b to the source or drain electrode layer 465 a 1 and465 a 2 in the etching step, the wiring layer 468 which protects thesource or drain electrode layer 465 a 2 in etching is not necessarilyprovided.

Note that materials and etching conditions are adjusted as appropriateso that the oxide semiconductor layer 462 is not removed when theconductive layer is etched.

In this embodiment, a Ti layer is used as the conductive film, anIn—Ga—Zn—O-based oxide semiconductor is used as the oxide semiconductorlayer 462, and an ammonia hydrogen peroxide solution (a mixture ofammonia, water, and a hydrogen peroxide solution) is used as an etchant.

Note that in the third photolithography process, part of the oxidesemiconductor layer 462 is etched, whereby an oxide semiconductor layerhaving a groove (a depressed portion) might be formed. The resist maskused for forming the source or drain electrode layer 465 b and thewiring layer 468 may be formed with an inkjet method. When the resistmask is formed with an inkjet method, a photomask is not used;therefore, manufacturing costs can be reduced.

Next, a gate insulating layer 452 is formed over the insulating layer457, the oxide semiconductor layer 462, the source or drain electrodelayer 465 a 1 and 465 a 2, the source or drain electrode layer 465 b,and the wiring layer 468.

The gate insulating layer 452 can be formed with a single-layerstructure or a layered structure using any of a silicon oxide layer, asilicon nitride layer, a silicon oxynitride layer, a silicon nitrideoxide layer, and an aluminum oxide layer with a plasma CVD method, asputtering method, or the like. Note that the gate insulating layer 452is preferably formed with a sputtering method so that the gateinsulating layer 452 contains hydrogen as little as possible. In thecase where a silicon oxide film is formed with a sputtering method, asilicon target or a quartz target is used as a target and a mixed gas ofoxygen and argon is used as a sputtering target.

The gate insulating layer 452 may have a structure where a silicon oxidelayer and a silicon nitride layer are stacked from the side of thesource or drain electrode layer 465 a 1 and 465 a 2 and the source ordrain electrode layer 465 b. In this embodiment, a silicon oxide layeris formed to a thickness of 100 nm with an RF sputtering method underthe following condition: the pressure is 0.4 Pa; the electric power ofthe high frequency power source is 1.5 kW; and the atmosphere is anatmosphere containing oxygen and argon (the flow ratio of oxygen toargon is 1:1 (each flow rate is 25 sccm).

Next, a fourth photolithography process is performed. A resist mask isformed and selective etching is performed to remove part of the gateinsulating layer 452, so that an opening 423 reaching the wiring layer468 is formed (see FIG. 8D). Although not illustrated, in forming theopening 423, an opening reaching the source or drain electrode layer 465b may be formed. In this embodiment, the opening reaching the source ordrain electrode layer 465 b is formed after an interlayer insulatinglayer is further stacked, and a wiring layer for electrical connectionis formed in the opening.

Then, after a conductive layer is formed over the gate insulating layer452 and in the opening 423, the gate electrode layer 461 (461 a and 461b) and the wiring layer 464 are formed in a fifth photolithographyprocess. Note that a resist mask may be formed with an inkjet method.When the resist mask is formed with an inkjet method, a photomask is notused; therefore, manufacturing costs can be reduced.

Further, the gate electrode layer 461 (461 a and 461 b) and the wiringlayer 464 can be formed with a single-layer structure or a layeredstructure using any of metal materials such as molybdenum, titanium,chromium, tantalum, tungsten, aluminum, copper, neodymium, and scandium,and an alloy material including any of these materials as a maincomponent.

In this embodiment, a titanium layer is formed to a thickness of 150 nmwith a sputtering method for the gate electrode layer 461 (461 a and 461b) and the wiring layer 464.

Next, second heat treatment (preferably 200° C. to 400° C. inclusive,for example, from 250° C. to 350° C. inclusive) is performed in an inertgas atmosphere or an oxygen gas atmosphere. In this embodiment, thesecond heat treatment is performed in a nitrogen atmosphere at 250° C.for one hour. The second heat treatment may be performed after aprotective insulating layer or a planarization insulating layer isformed over the thin film transistor 460.

Further, heat treatment may be performed at 100° C. to 200° C. inclusivefor one hour to 30 hours inclusive in the air. This heat treatment maybe performed at a fixed heating temperature. Alternatively, thefollowing change in the heating temperature may be conducted pluraltimes repeatedly: the heating temperature is increased from a roomtemperature to a temperature of 100° C. to 200° C. inclusive and thendecreased to a room temperature. Further, this heat treatment may beperformed under a reduced pressure. Under a reduced pressure, theheating time can be shortened.

Through the above steps, the thin film transistor 460 including theoxide semiconductor layer 462 in which the concentration of hydrogen,moisture, hydride, or hydroxide is reduced can be formed (see FIG. 8E).

A protective insulating layer or a planarization insulating layer forplanarization may be provided over the thin film transistor 460.Although not illustrated, an opening reaching the source or drainelectrode layer 465 b may be formed. In this embodiment, the openingreaching the source or drain electrode layer 465 b is formed in the gateinsulating layer 452, the protective insulating layer, and theplanarization layer, and a wiring layer for electrical connection to thesource or drain electrode layer 465 b is formed in the opening.

Moisture remaining in a reaction atmosphere is removed as describedabove in forming the oxide semiconductor film, whereby the concentrationof hydrogen and hydride in the oxide semiconductor film can be reduced.Accordingly, the oxide semiconductor film can be stable.

The logic circuits in Embodiments 1 and 2 including the above-describedthin film transistors can have stable electric characteristics and highreliability.

This embodiment can be implemented in appropriate combination with theother embodiments.

Embodiment 5

In this embodiment, another example of thin film transistors included inthe logic circuit in Embodiment 1 or Embodiment 2 is described. The sameportions as those in Embodiment 3 or Embodiment 4 and portions havingfunctions similar to those of the portions in Embodiment 3 or Embodiment4 and steps similar to those in Embodiment 3 or Embodiment 4 may behandled as in Embodiment 3 or Embodiment 4, and repeated description isomitted. In addition, detailed description of the same portions is alsoomitted.

The thin film transistors of this embodiment are described withreference to FIGS. 9A and 9B.

FIGS. 9A and 9B illustrate examples of cross-sectional structures of thethin film transistors. The thin film transistors 425 and 426 in FIGS. 9Aand 9B are each one of thin film transistors where an oxidesemiconductor layer is sandwiched between a conductive layer and a gateelectrode layer.

In addition, in FIGS. 9A and 9B, a silicon substrate is used as asubstrate and the thin film transistors 425 and 426 are provided over aninsulating layer 422 which is formed over a silicon substrate 420.

In FIG. 9A, a conductive layer 427 is formed between the insulatinglayer 422 and the insulating layer 407 over the silicon substrate 420 soas to overlap with at least the whole oxide semiconductor layer 412.

Note that FIG. 9B illustrates an example where the conductive layerbetween the insulating layer 422 and the insulating layer 407 isprocessed like the conductive layer 424 by etching and overlaps withpart of the oxide semiconductor layer 412, which includes at least achannel formation region.

The conductive layers 427 and 424 may each be formed using a metalmaterial which can resist temperature for heat treatment to be performedin a later step: an element selected from titanium (Ti), tantalum (Ta),tungsten (W), molybdenum (Mo), chromium (Cr), neodymium (Nd), andscandium (Sc), an alloy film containing a combination of any of theseelements, a nitride containing any of the above elements as itscomponent, or the like. Further, the conductive layers 427 and 424 mayeach have either a single-layer structure or a layered structure, andfor example, a single layer of a tungsten layer or a stack of a tungstennitride layer and a tungsten layer can be used.

A potential of the conductive layers 427 and 424 may be the same as ordifferent from that of the gate electrode layer 411 of the thin filmtransistors 425 and 426. The conductive layers 427 and 424 can each alsofunction as a second gate electrode layer. The potential of theconductive layers 427 and 424 may be a fixed potential such as GND or 0V.

Electric characteristics of the thin film transistors 425 and 426 can becontrolled by the conductive layers 427 and 424.

This embodiment can be implemented in appropriate combination with theother embodiments.

Embodiment 6

In this embodiment, an example of thin film transistors included in thelogic circuit in Embodiment 1 or Embodiment 2 is described.

One embodiment of a thin film transistor and a manufacturing method ofthe thin film transistor of this embodiment is described with referenceto FIGS. 10A to 10E.

FIG. 10E illustrate an example of a cross-sectional structure of a thinfilm transistor. A thin film transistor 390 illustrated in FIG. 10E isone of bottom gate thin film transistors and is also referred to as aninverted staggered thin film transistor.

Although description is given using a single-gate thin film transistoras the thin film transistor 390, a multi-gate thin film transistorincluding a plurality of channel formation regions may be formed asneeded.

A process of manufacturing the thin film transistor 390 over a substrate394 is described below with reference to FIGS. 10A to 10E.

First, after a conductive layer is formed over the substrate 394 havingan insulating surface, a gate electrode layer 391 is formed in a firstphotolithography process. The gate electrode layer preferably has atapered shape because coverage with a gate insulating layer stackedthereover can be improved. Note that a resist mask may be formed with aninkjet method. When the resist mask is formed with an inkjet method, aphotomask is not used; therefore, manufacturing costs can be reduced.

There is no particular limitation on a substrate that can be used as thesubstrate 394 having an insulating surface as long as it has at leastheat resistance to withstand heat treatment performed later. A glasssubstrate formed using barium borosilicate glass, aluminoborosilicateglass, or the like can be used.

When the temperature of the heat treatment performed later is high, asubstrate having a strain point of 730° C. or higher is preferably usedas the glass substrate. As a material of the glass substrate, a glassmaterial such as aluminosilicate glass, aluminoborosilicate glass, orbarium borosilicate glass is used, for example. Note that in general, bycontaining a larger amount of barium oxide (BaO) than boron oxide(B₂O₃), a glass substrate is heat-resistant and of more practical use.Therefore, a glass substrate containing a larger amount of BaO than B₂O₃is preferably used.

Note that, instead of the glass substrate described above, a substrateformed using an insulator such as a ceramic substrate, a quartzsubstrate, or a sapphire substrate may be used as the substrate 394.Alternatively, a crystallized glass substrate or the like may be used.Still alternatively, a plastic substrate or the like can be used asappropriate.

An insulating layer serving as a base layer may be provided between thesubstrate 394 and the gate electrode layer 391. The base layer has afunction of preventing diffusion of an impurity element from thesubstrate 394, and can be formed with a single-layer structure or alayered structure using any of a silicon nitride layer, a silicon oxidelayer, a silicon nitride oxide layer, and a silicon oxynitride layer.

Further, the gate electrode layer 391 can be formed with a single-layerstructure or a layered structure using any of metal materials such asmolybdenum, titanium, chromium, tantalum, tungsten, aluminum, copper,neodymium, and scandium, and an alloy material including any of thesematerials as a main component.

As a two-layer structure of the gate electrode layer 391, for example, atwo-layer structure in which a molybdenum layer is stacked over analuminum layer, a two-layer structure in which a molybdenum layer isstacked over a copper layer, a two-layer structure in which a titaniumnitride layer or a tantalum nitride layer is stacked over a copperlayer, a two-layer structure in which a titanium nitride layer and amolybdenum layer are stacked, or a two-layer structure in which atungsten nitride layer and a tungsten layer are stacked is preferable.As a three-layer structure, a stack of a tungsten layer or a tungstennitride layer, an alloy layer of aluminum and silicon or an alloy layerof aluminum and titanium, and a titanium nitride layer or a titaniumlayer is preferable. Note that the gate electrode layer may be formedusing a light-transmitting conductive layer. A light-transmittingconductive oxide can be given as an example of the light-transmittingconductive layer.

Then, the gate insulating layer 397 is formed over the gate electrodelayer 391.

The gate insulating layer 397 can be formed with a single-layerstructure or a layered structure using any of a silicon oxide layer, asilicon nitride layer, a silicon oxynitride layer, a silicon nitrideoxide layer, and an aluminum oxide layer with a plasma CVD method, asputtering method, or the like. Note that the gate insulating layer 397is preferably formed with a sputtering method so that the gateinsulating layer 397 contains hydrogen as little as possible. In thecase where a silicon oxide layer is formed with a sputtering method, asilicon target or a quartz target is used as a target and oxygen or amixed gas of oxygen and argon is used as a sputtering gas.

The gate insulating layer 397 may have a structure where a siliconnitride layer and a silicon oxide layer are stacked from the gateelectrode layer 391 side. For example, a silicon nitride layer (SiN_(y)(y>0)) with a thickness of 50 nm to 200 nm inclusive is formed with asputtering method as a first gate insulating layer and a silicon oxidelayer (SiO_(x) (x>0)) with a thickness of 5 nm to 300 nm inclusive isstacked as a second gate insulating layer over the first gate insulatinglayer; thus, the gate insulating layer with a thickness of 100 nm may beformed.

Further, in order that hydrogen, a hydroxyl group, and moisture might becontained in the gate insulating layer 397 and an oxide semiconductorlayer 393 to be formed later as little as possible, it is preferablethat the substrate 394 over which the gate electrode layer 391 is formedor the substrate 394 over which layers up to the gate insulating layer397 are formed be preheated in a preheating chamber of a sputteringapparatus as pretreatment for film formation so that impurities such ashydrogen and moisture adsorbed to the substrate 394 is eliminated andevacuated. The temperature for the preheating is 100° C. to 400° C.inclusive, preferably 150° C. to 300° C. inclusive. Note that a cryopumpis preferable as an evacuation unit provided in the preheating chamber.Note that this preheating treatment may be omitted. Further, thispreheating may be similarly performed on the substrate 394 over which anoxide insulating layer 396 has not been formed and the substrate 394over which layers up to a source electrode layer 395 a and a drainelectrode layer 395 b have been formed.

Then, the oxide semiconductor layer 393 is formed to a thickness of 2 nmto 200 nm inclusive over the gate insulating layer 397 (see FIG. 10A).

Note that before the oxide semiconductor layer 393 is formed with asputtering method, dust attached to a surface of the gate insulatinglayer 397 is preferably removed with reverse sputtering in which anargon gas is introduced and plasma is generated. The reverse sputteringrefers to a method in which, without application of a voltage to atarget side, an RF power source is used for application of a voltage toa substrate side in an argon atmosphere to modify a surface. Note thatinstead of an argon atmosphere, a nitrogen atmosphere, a heliumatmosphere, an oxygen atmosphere, or the like may be used.

The oxide semiconductor layer 393 is formed with a sputtering method.The oxide semiconductor layer 393 is formed using an In—Ga—Zn—O-basedoxide semiconductor layer, an In—Sn—Zn—O-based oxide semiconductorlayer, an In—Al—Zn—O-based oxide semiconductor layer, a Sn—Ga—Zn—O-basedoxide semiconductor layer, an Al—Ga—Zn—O-based oxide semiconductorlayer, a Sn—Al—Zn—O-based oxide semiconductor layer, an In—Zn—O-basedoxide semiconductor layer, a Sn—Zn—O-based oxide semiconductor layer, anAl—Zn—O-based oxide semiconductor layer, an In—O-based oxidesemiconductor layer, a Sn—O-based oxide semiconductor layer, or aZn—O-based oxide semiconductor layer. In this embodiment, the oxidesemiconductor layer 393 is formed with a sputtering method with the useof an In—Ga—Zn—O-based metal oxide target. Further, the oxidesemiconductor layer 393 can be formed with a sputtering method in a raregas (typically, argon) atmosphere, an oxygen atmosphere, or a mixedatmosphere containing a rare gas (typically, argon) and oxygen. In thecase of employing a sputtering method, a target containing SiO₂ at 2 wt% to 10 wt % inclusive may be used for film formation.

As a target for forming the oxide semiconductor layer 393 with asputtering method, a metal oxide target containing zinc oxide as itsmain component can be used. As another example of a metal oxide target,an oxide semiconductor film formation target containing In, Ga, and Zn(in a composition ratio, In₂O₃:Ga₂O₃:ZnO=1:1:1 [mol], In:Ga:Zn=1:1:0.5[atom]) can be used. Alternatively, a metal oxide target containing In,Ga, and Zn (the composition ratio of In:Ga:Zn=1:1:1 or 1:1:2 [atom]) maybe used. The fill rate of the metal oxide target is 90% to 100%inclusive, preferably, 95% to 99.9% inclusive. With the use of the metaloxide target with high fill rate, a dense oxide semiconductor layer isformed.

The substrate is held in a treatment chamber kept under reducedpressure, and the substrate is heated to room temperature or atemperature of lower than 400° C. Then, a sputtering gas from whichhydrogen and moisture are removed is introduced into the treatmentchamber from which remaining moisture is being removed, and the oxidesemiconductor layer 393 is formed over the substrate 394 with the use ofa metal oxide as a target. To remove moisture remaining in the treatmentchamber, an entrapment vacuum pump is preferably used. For example, acryopump, an ion pump, or a titanium sublimation pump is preferablyused. Further, an evacuation unit may be a turbo pump provided with acold trap. In the deposition chamber which is evacuated with thecryopump, a hydrogen atom, a compound containing a hydrogen atom, suchas water (H₂O), (more preferably, also a compound containing a carbonatom), and the like are evacuated, whereby the concentration of animpurity in the oxide semiconductor film formed in the depositionchamber can be reduced. By performing deposition by sputtering whileremoving moisture remaining in the treatment chamber using a cryopump, asubstrate temperature when the oxide semiconductor layer 393 is formedcan be higher than or equal to room temperature and lower than 400° C.

An example of the deposition condition is as follows: the distancebetween the substrate and the target is 100 mm, the pressure is 0.6 Pa,the electric power of the DC power source is 0.5 kW, and the atmosphereis an oxygen atmosphere (the flow rate of oxygen is 100%). It ispreferable that a pulsed DC power source be used because powdersubstances generated in film formation can be reduced and the filmthickness can be uniform. The oxide semiconductor layer preferably has athickness of 5 nm to 30 nm inclusive. Note that the appropriatethickness depends on an oxide semiconductor material used and thethickness may be selected in accordance with a material.

Examples of a sputtering method include an RF sputtering method in whicha high-frequency power source is used as a sputtering power source, a DCsputtering method in which a DC power source is used, and a pulsed DCsputtering method in which a bias is applied in a pulsed manner. An RFsputtering method is mainly used in the case where an insulating film isformed, and a DC sputtering method is mainly used in the case where ametal film is formed.

In addition, there is also a multi-source sputtering apparatus in whicha plurality of targets of different materials can be set. With themulti-source sputtering apparatus, films of different materials can beformed to be stacked in the same chamber, or plural kinds of materialscan be discharged for film formation at the same time in the samechamber.

In addition, there are a sputtering apparatus provided with a magnetsystem inside the chamber, which is for a magnetron sputtering method,and a sputtering apparatus which is used for an ECR sputtering method inwhich plasma produced with the use of microwaves is used without usingglow discharge.

Furthermore, as a deposition method using a sputtering method, there arealso a reactive sputtering method in which a target substance and asputtering gas component are chemically reacted with each other duringdeposition to form a thin compound film thereof, and a bias sputteringmethod in which voltage is also applied to a substrate duringdeposition.

Then, in a second photolithography process, the oxide semiconductorlayer 393 is processed into an island-shaped oxide semiconductor layer399 (see FIG. 10B). A resist mask for forming the island-shaped oxidesemiconductor layer 399 may be formed with an inkjet method. When theresist mask is formed with an inkjet method, a photomask is not used;therefore, manufacturing costs can be reduced.

In the case of forming a contact hole in the gate insulating layer 397,the step may be performed in forming the oxide semiconductor layer 399.

Note that the etching of the oxide semiconductor layer 393 may be dryetching, wet etching, or both dry etching and wet etching.

As the etching gas for dry etching, a gas containing chlorine(chlorine-based gas such as chlorine (Cl₂), boron chloride (BCl₃),silicon chloride (SiCl₄), or carbon tetrachloride (CCl₄)) is preferablyused.

Alternatively, a gas containing fluorine (fluorine-based gas such ascarbon tetrafluoride (CF₄), sulfur fluoride (SF₆), nitrogen fluoride(NF₃), or trifluoromethane (CHF₃)); hydrogen bromide (HBr); oxygen (O₂);any of these gases to which a rare gas such as helium (He) or argon (Ar)is added; or the like can be used.

As the dry etching method, a parallel plate RIE (reactive ion etching)method or an ICP (inductively coupled plasma) etching method can beused. In order to etch the layer into a desired shape, the etchingcondition (the amount of electric power applied to a coil-shapedelectrode, the amount of electric power applied to an electrode on thesubstrate side, the temperature of the electrode on the substrate side,or the like) is adjusted as appropriate.

As an etchant used for wet etching, a mixed solution of phosphoric acid,acetic acid, and nitric acid, or the like can be used. Alternatively,ITO07N (produced by KANTO CHEMICAL CO., INC.) may be used.

The etchant used in the wet etching is removed by cleaning together withthe material which is etched off. The waste liquid including the etchantand the material etched off may be purified and the material may bereused. When a material such as indium included in the oxidesemiconductor layer is collected from the waste liquid after the etchingand reused, the resources can be efficiently used and the cost can bereduced.

The etching conditions (such as an etchant, etching time, andtemperature) are appropriately adjusted depending on the material sothat the oxide semiconductor layer can be etched to have a desiredshape.

Note that it is preferable to perform reverse sputtering beforeformation of a conductive layer in the following step so that a resistresidue and the like attached to surfaces of the oxide semiconductorlayer 399 and the gate insulating layer 397 can be removed.

Next, a conductive layer is formed over the gate insulating layer 397and the oxide semiconductor layer 399. The conductive layer may beformed with a sputtering method or a vacuum evaporation method. As thematerial of the conductive layer, there are an element selected from Al,Cr, Cu, Ta, Ti, Mo, or W; an alloy layer containing a combination of anyof these elements; and the like. Further, one or more materials selectedfrom manganese, magnesium, zirconium, beryllium, and thorium may beused. The metal conductive layer may have a single-layer structure or alayered structure of two or more layers. For example, a single-layerstructure of an aluminum film including silicon, a two-layer structurein which a titanium layer is stacked over an aluminum layer, athree-layer structure in which a Ti layer, an aluminum layer, and a Tilayer are stacked in the order presented, and the like can be given.Alternatively, a layer, an alloy layer, or a nitride layer of acombination of Al and one or plurality of elements selected from thefollowings may be used: titanium (Ti), tantalum (Ta), tungsten (W),molybdenum (Mo), chromium (Cr), neodymium (Nd), and scandium (Sc).

A third photolithography process is performed. A resist mask is formedover the conductive layer and selective etching is performed, so thatthe source electrode layer 395 a and the drain electrode layer 395 b areformed. Then, the resist mask is removed (see FIG. 10C).

Ultraviolet, a KrF laser beam, or an ArF laser beam is used for lightexposure for forming the resist mask in the third photolithographyprocess. A channel length L of the thin film transistor to be formedlater depends on a width of an interval between a bottom portion of thesource electrode layer and a bottom portion of the drain electrode layerwhich are adjacent to each other over the oxide semiconductor layer 399.Note that when light exposure is performed in the case where the channellength L is shorter than 25 nm, extreme ultraviolet with extremely shortwavelengths of several nanometers to several tens of nanometers is usedfor light exposure for forming the resist mask in the thirdphotolithography process. Light exposure with extreme ultraviolet leadsto a high resolution and a large focal depth. Accordingly, the channellength L of the thin film transistor to be formed later can be set to 10nm to 1000 nm inclusive. Thus, the operation speed of a circuit can beincreased, and further, an off-state current is significantly small, sothat low power consumption can be achieved.

Note that materials and etching conditions are adjusted as appropriateso that the oxide semiconductor layer 399 is not removed when theconductive layer is etched.

In this embodiment, a Ti layer is used as the metal conductive film, anIn—Ga—Zn—O-based oxide semiconductor is used as the oxide semiconductorlayer 399, and an ammonia hydrogen peroxide solution (a mixture ofammonia, water, and a hydrogen peroxide solution) is used as an etchant.

Note that in the third photolithography process, only part of the oxidesemiconductor layer 399 is etched, whereby an oxide semiconductor layerhaving a groove (a depressed portion) might be formed. The resist maskused for forming the source electrode layer 395 a and the drainelectrode layer 395 b may be formed with an inkjet method. When theresist mask is formed with an inkjet method, a photomask is not used;therefore, manufacturing costs can be reduced.

To reduce the number of photomasks and steps in a photolithography step,etching may be performed with the use of a resist mask formed using amulti-tone mask which is a light-exposure mask through which light istransmitted so as to have a plurality of intensities. Since a resistmask formed using a multi-tone mask has a plurality of thicknesses andcan be further changed in shape by performing etching, the resist maskcan be used in a plurality of etching steps to provide differentpatterns. Thus, a resist mask corresponding to at least two kinds ofdifferent patterns can be formed by using a multi-tone mask.Accordingly, the number of light-exposure masks can be reduced and thenumber of corresponding photolithography steps can be also reduced,whereby simplification of a process can be realized.

With plasma treatment with a gas such as N₂O, N₂, or Ar, water adsorbedto a surface of an exposed portion of the oxide semiconductor layer maybe removed. Alternatively, plasma treatment may be performed using amixed gas of oxygen and argon.

In the case of performing the plasma treatment, the oxide insulatinglayer 396 is formed without exposure to the air as an oxide insulatinglayer which serves as a protective insulating layer and is in contactwith part of the oxide semiconductor layer 396 (see FIG. 10D). In thisembodiment, the oxide insulating layer 396 is formed in contact with theoxide semiconductor layer 399 in a region where the oxide semiconductorlayer 399 does not overlap with the source electrode layer 395 a and thedrain electrode layer 395 b.

In this embodiment, the substrate 394 over which layers up to theisland-shaped oxide semiconductor layer 399, the source electrode layer395 a, the drain electrode layer 395 b have been formed is heated toroom temperature or a temperature of lower than 100° C. and a sputteringgas from which hydrogen and moisture are removed and which containshigh-purity oxygen is introduced, and a silicon target is used, wherebya silicon oxide layer having a defect is formed as the oxide insulatinglayer 396.

For example, the silicon oxide layer is formed with a pulsed DCsputtering method in which the purity of a sputtering gas is 6N, aboron-doped silicon target (the resistivity is 0.01 Ω·cm) is used, thedistance between the substrate and the target (T-S distance) is 89 mm,the pressure is 0.4 Pa, the electric power of the DC power source is 6kW, and the atmosphere is an oxygen atmosphere (the oxygen flow rate is100%). The thickness of the silicon oxide layer is 300 nm. Note thatinstead of a silicon target, quartz (preferably, synthetic quartz) canbe used as a target used when the silicon oxide layer is formed. As asputtering gas, oxygen or a mixed gas of oxygen and argon is used.

In that case, the oxide insulating layer 396 is preferably formed whileremoving moisture remaining in the treatment chamber. This is forpreventing hydrogen, a hydroxyl group, and moisture from being containedin the oxide semiconductor layer 399 and the oxide insulating layer 396.

In order to remove moisture remaining in the treatment chamber, anentrapment vacuum pump is preferably used. For example, a cryopump, anion pump, or a titanium sublimation pump is preferably used. Further, anevacuation unit may be a turbo pump provided with a cold trap. In thedeposition chamber which is evacuated with the cryopump, a hydrogenatom, a compound containing a hydrogen atom, such as water (H₂O), andthe like are evacuated, whereby the concentration of an impurity in theoxide insulating layer 396 formed in the deposition chamber can bereduced.

Note that as the oxide insulating layer 396, a silicon oxynitride layer,an aluminum oxide layer, an aluminum oxynitride layer, or the like maybe used instead of the silicon oxide layer.

Further, heat treatment may be performed at 100° C. to 400° C. while theoxide insulating layer 396 and the oxide semiconductor layer 399 are incontact with each other. Since the oxide insulating layer 396 in thisembodiment has a lot of defects, with this heat treatment, an impuritysuch as hydrogen, moisture, a hydroxyl group, or hydride contained inthe oxide semiconductor layer 399 can be diffused to the oxideinsulating layer 396 so that the impurity in the oxide semiconductorlayer 399 can be further reduced.

Through the above steps, the thin film transistor 390 including theoxide semiconductor layer 392 in which the concentration of hydrogen,moisture, hydride, or hydroxide is reduced can be formed (see FIG. 10E).

Moisture remaining in a reaction atmosphere is removed as describedabove in forming the oxide semiconductor layer, whereby theconcentration of hydrogen and hydride in the oxide semiconductor layercan be reduced. Accordingly, the oxide semiconductor layer can bestable.

A protective insulating layer may be provided over the oxide insulatinglayer. In this embodiment, the protective insulating layer 398 is formedover the oxide insulating layer 396. As the protective insulating layer398, a silicon nitride layer, a silicon nitride oxide layer, an aluminumnitride layer, an aluminum nitride oxide layer, or the like is used.

The substrate 394 over which layers up to the oxide insulating layer 396have been formed is heated to a temperature of 100° C. to 400° C., asputtering gas from which hydrogen and moisture are removed and whichcontains high-purity nitrogen is introduced, and a silicon semiconductortarget is used, whereby a silicon nitride layer is formed as theprotective insulating layer 398. In this case, the protective insulatinglayer 398 is preferably formed while removing moisture remaining in atreatment chamber, similarly to the oxide insulating layer 396.

In the case where the protective insulating layer 398 is formed, thesubstrate 394 is heated to 100° C. to 400° C. in forming the protectiveinsulating layer 398, whereby hydrogen or water contained in the oxidesemiconductor layer can be diffused to the oxide insulating layer. Inthat case, heat treatment is not necessarily performed after formationof the oxide insulating layer 396.

In the case where the silicon oxide layer is formed as the oxideinsulating layer 396 and the silicon nitride layer is stacked thereoveras the protective insulating layer 398, the silicon oxide layer and thesilicon nitride layer can be formed with the use of a common silicontarget in the same treatment chamber. After a sputtering gas containingoxygen is introduced first, a silicon oxide layer is formed using asilicon target mounted in the treatment chamber, and then, thesputtering gas is switched to a sputtering gas containing nitrogen andthe same silicon target is used to form a silicon nitride layer. Sincethe silicon oxide layer and the silicon nitride layer can be formedsuccessively without being exposed to the air, impurities such ashydrogen and moisture can be prevented from adsorbing onto a surface ofthe silicon oxide layer. In that case, after the silicon oxide layer isformed as the oxide insulating layer 396 and the silicon nitride layeris stacked thereover as the protective insulating layer 398, heattreatment (at a temperature of 100° C. to 400° C.) for diffusinghydrogen or moisture contained in the oxide semiconductor layer to theoxide insulating layer is preferably performed.

After the protective insulating layer is formed, heat treatment may befurther performed at 100° C. to 200° C. inclusive for one hour to 30hours inclusive in the air. This heat treatment may be performed at afixed heating temperature. Alternatively, the following change in theheating temperature may be conducted plural times repeatedly: theheating temperature is increased from a room temperature to atemperature of 100° C. to 200° C. inclusive and then decreased to a roomtemperature. Further, this heat treatment may be performed under areduced pressure before formation of the oxide insulating layer. Under areduced pressure, the heating time can be shortened. With this heattreatment, the thin film transistor can be normally off Therefore,reliability of the thin film transistor can be improved.

Moisture remaining in a reaction atmosphere is removed in forming theoxide semiconductor layer including a channel formation region over thegate insulating layer, whereby the concentration of hydrogen and hydridein the oxide semiconductor layer can be reduced.

The above steps can be used for manufacture of backplanes (substratesover which thin film transistors are formed) of liquid crystal displaypanels, electroluminescent display panels, display devices usingelectronic ink, or the like. Since the above steps can be performed at atemperature of 400° C. or lower, they can also be applied tomanufacturing steps where a glass substrate with a thickness of 1 mm orsmaller and a side of longer than 1 m is used. In addition, since all ofthe above steps can be performed at a treatment temperature of 400° C.or lower, display panels can be manufactured without consuming muchenergy.

The logic circuits in Embodiments 1 and 2 including the above-describedthin film transistors can have stable electric characteristics and highreliability.

This embodiment can be implemented in appropriate combination with theother embodiments.

Embodiment 7

In this embodiment, an example of thin film transistors included in thelogic circuit in Embodiment 1 or Embodiment 2 is described.

One embodiment of a thin film transistor and a manufacturing method ofthe thin film transistor of this embodiment is described with referenceto FIGS. 11A to 11E.

FIGS. 11A to 11E illustrate an example of a cross-sectional structure ofa thin film transistor. A thin film transistor 310 illustrated in FIG.11D is one of bottom gate thin film transistors and is also referred toas an inverted staggered thin film transistor.

Although description is given using a single-gate thin film transistoras the thin film transistor 310, a multi-gate thin film transistorincluding a plurality of channel formation regions may be formed asneeded.

A process of manufacturing the thin film transistor 310 over a substrate300 is described below with reference to FIGS. 11A to 11E.

First, after a conductive layer is formed over the substrate 300 havingan insulating surface, a gate electrode layer 311 is formed in a firstphotolithography process. Note that a resist mask may be formed with aninkjet method. When the resist mask is formed with an inkjet method, aphotomask is not used; therefore, manufacturing costs can be reduced.

There is no particular limitation on a substrate that can be used as thesubstrate 300 having an insulating surface as long as it has at leastheat resistance enough to withstand heat treatment performed later. Aglass substrate formed using barium borosilicate glass,aluminoborosilicate glass, or the like can be used.

When the temperature of the heat treatment performed later is high, asubstrate having a strain point of 730° C. or higher is preferably usedas the glass substrate. As a material of the glass substrate, a glassmaterial such as aluminosilicate glass, aluminoborosilicate glass, orbarium borosilicate glass is used, for example. Note that by containinga larger amount of barium oxide (BaO) than boron oxide (B₂O₃), a glasssubstrate is heat-resistant and of more practical use. Therefore, aglass substrate containing a larger amount of BaO than B₂O₃ ispreferably used.

Note that, instead of the glass substrate described above, a substrateformed using an insulator such as a ceramic substrate, a quartzsubstrate, or a sapphire substrate may be used as the substrate.Alternatively, a crystallized glass substrate or the like may be used.

An insulating layer serving as a base layer may be provided between thesubstrate 300 and the gate electrode layer 311. The base layer has afunction of preventing diffusion of an impurity element from thesubstrate 300, and can be formed with a single-layer structure or alayered structure using any of a silicon nitride layer, a silicon oxidelayer, a silicon nitride oxide layer, and a silicon oxynitride layer.

Further, the gate electrode layer 311 can be formed with a single-layerstructure or a layered structure using any of metal materials such asmolybdenum, titanium, chromium, tantalum, tungsten, aluminum, copper,neodymium, and scandium, and an alloy material including any of thesematerials as a main component.

As a two-layer structure of the gate electrode layer 311, for example, atwo-layer structure in which a molybdenum layer is stacked over analuminum layer, a two-layer structure in which a molybdenum layer isstacked over a copper layer, a two-layer structure in which a titaniumnitride layer or a tantalum nitride layer is stacked over a copperlayer, a two-layer structure in which a titanium nitride layer and amolybdenum layer are stacked, or a two-layer structure in which atungsten nitride layer and a tungsten layer are stacked is preferable.As a three-layer structure, a stack of a tungsten layer or a tungstennitride layer, an alloy layer of aluminum and silicon or an alloy layerof aluminum and titanium, and a titanium nitride layer or a titaniumlayer is preferable.

Then, the gate insulating layer 302 is formed over the gate electrodelayer 311.

The gate insulating layer 302 can be formed with a single-layerstructure or a layered structure using any of a silicon oxide layer, asilicon nitride layer, a silicon oxynitride layer, a silicon nitrideoxide layer, and an aluminum oxide layer with a plasma CVD method, asputtering method, or the like. For example, a silicon oxynitride layermay be formed with a plasma CVD method with SiH₄, oxygen, and nitrogenfor a deposition gas. For example, the thickness of the gate insulatinglayer 302 is 100 nm to 500 nm inclusive, and in the case where the gateinsulating layer 302 has a layered structure, a second gate insulatinglayer with a thickness of 5 nm to 300 nm inclusive is stacked over afirst gate insulating layer with a thickness of 50 nm to 200 nminclusive, for example.

In this embodiment, a silicon oxynitride layer having a thickness ofsmaller than or equal to 100 nm is formed as the gate insulating layer302 with a plasma CVD method.

Then, an oxide semiconductor layer 330 is formed to a thickness of 2 nmto 200 nm inclusive over the gate insulating layer 302.

Note that before the oxide semiconductor layer 330 is formed with asputtering method, dust attached to a surface of the gate insulatinglayer 302 is preferably removed with reverse sputtering in which anargon gas is introduced and plasma is generated. Note that instead of anargon atmosphere, a nitrogen atmosphere, a helium atmosphere, an oxygenatmosphere, or the like may be used.

The oxide semiconductor layer 330 is formed using an In—Ga—Zn—O-basedoxide semiconductor layer, an In—Sn—Zn—O-based oxide semiconductorlayer, an In—Al—Zn—O-based oxide semiconductor layer, a Sn—Ga—Zn—O-basedoxide semiconductor layer, an Al—Ga—Zn—O-based oxide semiconductorlayer, a Sn—Al—Zn—O-based oxide semiconductor layer, an In—Zn—O-basedoxide semiconductor layer, a Sn—Zn—O-based oxide semiconductor layer, anAl—Zn—O-based oxide semiconductor layer, an In—O-based oxidesemiconductor layer, a Sn—O-based oxide semiconductor layer, or aZn—O-based oxide semiconductor layer. In this embodiment, the oxidesemiconductor layer 330 is formed with a sputtering method with the useof an In—Ga—Zn—O-based oxide semiconductor target. FIG. 11A correspondsto a cross-sectional view at this stage. Further, the oxidesemiconductor layer 330 can be formed with a sputtering method in a raregas (typically, argon) atmosphere, an oxygen atmosphere, or a mixedatmosphere containing a rare gas (typically, argon) and oxygen. In thecase of employing a sputtering method, a target containing SiO₂ at 2 wt% to 10 wt % inclusive may be used for film formation.

As a target for forming the oxide semiconductor layer 330 with asputtering method, a metal oxide target containing zinc oxide as itsmain component can be used. As another example of a metal oxide target,a metal oxide target containing In, Ga, and Zn (in a composition ratio,In₂O₃:Ga₂O₃:ZnO=1:1:1 [mol], In:Ga:Zn=1:1:0.5 [atom]) can be used.Alternatively, a metal oxide target containing In, Ga, and Zn (thecomposition ratio of In:Ga:Zn=1:1:1 or 1:1:2 [atom]) may be used. Thefill rate of the metal oxide target is 90% to 100% inclusive,preferably, 95% to 99.9% inclusive. With the use of the metal oxidetarget with high fill rate, a dense oxide semiconductor layer is formed.

It is preferable to use a high-purity gas from which an impurity such ashydrogen, water, a hydroxyl group, or hydride is removed to aconcentration expressed by a level of ppm or ppb, as a sputtering gasused when the oxide semiconductor layer 330 is formed.

The substrate is held in a treatment chamber kept under reducedpressure, and the substrate temperature is set to 100° C. to 600° C.,preferably 200° C. to 400° C. Film formation is performed while thesubstrate is heated, whereby the concentration of an impurity containedin the oxide semiconductor layer formed can be reduced. Further, damagesdue to sputtering can be reduced. Then, a sputtering gas from whichhydrogen and moisture are removed is introduced into the treatmentchamber from which remaining moisture is being removed, and the oxidesemiconductor layer 330 is formed over the substrate 300 with the use ofa metal oxide as a target. To remove moisture remaining in the treatmentchamber, an entrapment vacuum pump is preferably used. For example, acryopump, an ion pump, or a titanium sublimation pump is preferablyused. Further, an evacuation unit may be a turbo pump provided with acold trap. In the deposition chamber which is evacuated with thecryopump, a hydrogen atom, a compound containing a hydrogen atom, suchas water (H₂O), (more preferably, also a compound containing a carbonatom), and the like are evacuated, whereby the concentration of animpurity in the oxide semiconductor layer formed in the depositionchamber can be reduced.

An example of the deposition condition is as follows: the distancebetween the substrate and the target is 100 mm, the pressure is 0.6 Pa,the electric power of the DC power source is 0.5 kW, and the atmosphereis an oxygen atmosphere (the flow rate of oxygen is 100%). It ispreferable that a pulsed DC power source be used because powdersubstances generated in film formation can be reduced and the filmthickness can be uniform. The oxide semiconductor layer preferably has athickness of 5 nm to 30 nm inclusive. Note that the appropriatethickness depends on an oxide semiconductor material used and thethickness may be selected in accordance with a material.

Then, in a second photolithography process, the oxide semiconductorlayer 330 is processed into an island-shaped oxide semiconductor layer.A resist mask for forming the island-shaped oxide semiconductor layermay be formed with an inkjet method. When the resist mask is formed withan inkjet method, a photomask is not used; therefore, manufacturingcosts can be reduced.

Next, the oxide semiconductor layer is subjected to first heattreatment. With the first heat treatment, dehydration or dehydrogenationof the oxide semiconductor layer can be conducted. The temperature ofthe first heat treatment is higher than or equal to 400° C. and lowerthan or equal to 750° C., preferably higher than or equal to 400° C. andlower than the strain point of the substrate. Here, the substrate isintroduced into an electric furnace which is one of heat treatmentapparatuses, heat treatment is performed on the oxide semiconductorlayer in a nitrogen atmosphere at 450° C. for one hour, and then, theoxide semiconductor layer is not exposed to the air so that entry ofwater and hydrogen into the oxide semiconductor layer is prevented;thus, an oxide semiconductor layer 331 is obtained (see FIG. 11B).

The apparatus for the heat treatment is not limited to the electricfurnace and may be the one provided with a device for heating an objectto be processed, using heat conduction or heat radiation from a heatingelement such as a resistance heating element. For example, an RTA (rapidthermal anneal) apparatus such as a GRTA (gas rapid thermal anneal)apparatus or an LRTA (lamp rapid thermal anneal) apparatus can be used.An LRTA apparatus is an apparatus for heating an object to be processedby radiation of light (an electromagnetic wave) emitted from a lamp suchas a halogen lamp, a metal halide lamp, a xenon arc lamp, a carbon arclamp, a high pressure sodium lamp, or a high pressure mercury lamp. AGRTA apparatus is an apparatus for heat treatment using ahigh-temperature gas. As the gas, an inert gas which does not react withan object to be processed due to heat treatment, such as nitrogen or arare gas such as argon is used.

For example, as the first heat treatment, GRTA may be performed asfollows. The substrate is transferred and put in an inert gas which hasbeen heated to a high temperature of 650° C. to 700° C., heated forseveral minutes, and transferred and taken out of the inert gas whichhas been heated to a high temperature. GRTA enables high-temperatureheat treatment in a short time.

Note that in the first heat treatment, it is preferable that water,hydrogen, and the like be not included in nitrogen or a rare gas such ashelium, neon, or argon. Alternatively, it is preferable that nitrogen ora rare gas such as helium, neon, or argon introduced into an apparatusfor the heat treatment have a purity of 6N (99.9999%) or more,preferably, 7N (99.99999%) or more (that is, an impurity concentrationis set to 1 ppm or lower, preferably, 0.1 ppm or lower).

Further, the oxide semiconductor layer might be crystallized to be amicrocrystalline layer or a polycrystalline layer depending on acondition of the first heat treatment or a material of the oxidesemiconductor layer. For example, the oxide semiconductor layer may becrystallized to become a microcrystalline oxide semiconductor layerhaving a degree of crystallization of 90% or more, or 80% or more.Further, depending on the condition of the first heat treatment and thematerial of the oxide semiconductor layer, the oxide semiconductor layermay become an amorphous oxide semiconductor layer containing nocrystalline component. The oxide semiconductor layer might become anoxide semiconductor layer in which a microcrystalline portion (with agrain diameter greater than or equal to 1 nm and less than or equal to20 nm, typically greater than or equal to 2 nm and less than or equal to4 nm) is mixed into an amorphous oxide semiconductor.

Alternatively, the first heat treatment of the oxide semiconductor layermay be performed on the oxide semiconductor layer 330 which has not yetbeen processed into the island-shaped oxide semiconductor layer. In thatcase, after the first heat treatment, the substrate is taken out of theheating apparatus and a photolithography process is performed.

The heat treatment having an effect of dehydration or dehydrogenation onthe oxide semiconductor layer may be performed at any of the followingtimings: after the oxide semiconductor layer is formed; after a sourceelectrode layer and a drain electrode layer are formed over the oxidesemiconductor layer; and after a protective insulating layer is formedover the source electrode layer and the drain electrode layer.

In the case of forming a contact hole in the gate insulating layer 302,the step may be performed either before or after dehydration ordehydrogenation of the oxide semiconductor layer.

Note that the etching of the oxide semiconductor film is not limited towet etching and may be dry etching.

The etching conditions (such as an etchant, etching time, andtemperature) are appropriately adjusted depending on the material sothat the material can be etched into a desired shape.

Next, a conductive layer is formed over the gate insulating layer 302and the oxide semiconductor layer 331. The conductive layer may beformed with a sputtering method or a vacuum evaporation method. As thematerial of the conductive layer, there are an element selected from Al,Cr, Cu, Ta, Ti, Mo, or W; an alloy layer containing a combination of anyof these elements; and the like. Further, one or more materials selectedfrom manganese, magnesium, zirconium, beryllium, and thorium may beused. The conductive film may have a single-layer structure or a layeredstructure of two or more layers. For example, a single-layer structureof an aluminum layer including silicon, a two-layer structure in which atitanium layer is stacked over an aluminum layer, a three-layerstructure in which a Ti layer, an aluminum layer, and a Ti layer arestacked in the order presented, and the like can be given.Alternatively, a layer, an alloy layer, or a nitride layer of acombination of Al and one or plurality of elements selected from thefollowings may be used: titanium (Ti), tantalum (Ta), tungsten (W),molybdenum (Mo), chromium (Cr), neodymium (Nd), and scandium (Sc).

If heat treatment is performed after formation of the conductive layer,it is preferable that the conductive layer have heat resistance enoughto withstand the heat treatment.

A third photolithography process is performed. A resist mask is formedover the conductive layer and selective etching is performed, so that asource electrode layer 315 a and a drain electrode layer 315 b areformed. Then, the resist mask is removed (see FIG. 11C).

Ultraviolet, a KrF laser beam, or an ArF laser beam is used for lightexposure for forming the resist mask in the third photolithographyprocess. A channel length L of the thin film transistor to be formedlater depends on a width of an interval between a bottom portion of thesource electrode layer and a bottom portion of the drain electrode layerwhich are adjacent to each other over the oxide semiconductor layer 331.Note that when light exposure is performed in the case where the channellength L is shorter than 25 nm, extreme ultraviolet with extremely shortwavelengths of several nanometers to several tens of nanometers is usedfor light exposure for forming the resist mask in the thirdphotolithography process. Light exposure with extreme ultraviolet leadsto a high resolution and a large focal depth. Accordingly, the channellength L of the thin film transistor to be formed later can be set to 10nm to 1000 nm inclusive. Thus, the operation speed of a circuit can beincreased, and further, an off-state current is significantly small, sothat low power consumption can be achieved.

Note that materials and etching conditions are adjusted as appropriateso that the oxide semiconductor layer 331 is not removed when theconductive layer is etched.

In this embodiment, a Ti layer is used as the conductive layer, anIn—Ga—Zn—O-based oxide semiconductor is used as the oxide semiconductorlayer 331, and an ammonia hydrogen peroxide solution (a mixture ofammonia, water, and a hydrogen peroxide solution) is used as an etchant.

Note that in the third photolithography process, only part of the oxidesemiconductor layer 331 is etched, whereby an oxide semiconductor layerhaving a groove (a depressed portion) might be formed. The resist maskused for forming the source electrode layer 315 a and the drainelectrode layer 315 b may be formed with an inkjet method. When theresist mask is formed with an inkjet method, a photomask is not used;therefore, manufacturing costs can be reduced.

Further, an oxide conductive layer may be formed between the oxidesemiconductor layer and the source and drain electrode layers. The oxideconductive layer and a metal layer for forming the source and drainelectrode layers can be formed successively. The oxide conductive layercan function as a source region and a drain region.

When the oxide conductive layer is provided as the source region and thedrain region between the oxide semiconductor layer and the source anddrain electrode layers, the source region and the drain region can havelower resistance and the transistor can operate at high speed.

To reduce the number of photomasks and steps in a photolithography step,etching may be performed with the use of a resist mask formed using amulti-tone mask which is a light-exposure mask through which light istransmitted so as to have a plurality of intensities. Since a resistmask formed using a multi-tone mask has a plurality of thicknesses andcan be further changed in shape by performing etching, the resist maskcan be used in a plurality of etching steps to provide differentpatterns. Thus, a resist mask corresponding to at least two kinds ofdifferent patterns can be formed by using a single multi-tone mask.Accordingly, the number of light-exposure masks can be reduced and thenumber of corresponding photolithography steps can be also reduced,whereby simplification of a process can be realized.

Next, plasma treatment with a gas such as N₂O, N₂, or Ar is performed.With this plasma treatment, water adsorbed to a surface of an exposedportion of the oxide semiconductor layer is removed. Alternatively,plasma treatment may be performed using a mixed gas of oxygen and argon.

After the plasma treatment is performed, an oxide insulating layer 316which serves as a protective insulating layer and is in contact withpart of the oxide semiconductor layer is formed without exposure to theair.

The oxide insulating layer 316 can be formed to a thickness of longerthan or equal to 1 nm with a sputtering method or the like asappropriate, which is a method with which an impurity such as water orhydrogen does not enter the oxide insulating layer 316. When hydrogen iscontained in the oxide insulating layer 316, entry of the hydrogen tothe oxide semiconductor layer or extraction of oxygen in the oxidesemiconductor layer by the hydrogen is caused, whereby a backchannel ofthe oxide semiconductor layer comes to be n-type (to have a lowerresistance) and thus a parasitic channel might be formed. Therefore, itis important that a formation method in which hydrogen is not used isemployed so that the oxide insulating layer 316 is formed containing aslittle hydrogen as possible.

In this embodiment, a silicon oxide layer is formed to a thickness of200 nm as the oxide insulating layer 316 with a sputtering method. Thesubstrate temperature in film formation may be higher than or equal toroom temperature and lower than or equal to 300° C. and in thisembodiment, is 100° C. The silicon oxide layer can be formed with asputtering method in a rare gas (typically, argon) atmosphere, an oxygenatmosphere, or a mixed atmosphere of a rare gas (typically, argon) andoxygen. Further, a silicon oxide target or a silicon target can be usedas a target. For example, the silicon oxide layer can be formed using asilicon target with a sputtering method in an atmosphere containingoxygen and nitrogen. The oxide insulating layer 316 which is formed incontact with the oxide semiconductor layer in a region which is in anoxygen-deficient state and thus is n-type, that is, has a lowerresistance is formed using an inorganic insulating layer that does notcontain impurities such as moisture, a hydrogen ion, and OH⁻ and blocksentry of such impurities from the outside, typically, a silicon oxidelayer, a silicon oxynitride layer, an aluminum oxide layer, or analuminum oxynitride layer.

In that case, the oxide insulating layer 316 is preferably formed whileremoving moisture remaining in the treatment chamber. This is forpreventing hydrogen, a hydroxyl group, and moisture from being containedin the oxide semiconductor layer 331 and the oxide insulating layer 316.

In order to remove moisture remaining in the treatment chamber, anentrapment vacuum pump is preferably used. For example, a cryopump, anion pump, or a titanium sublimation pump is preferably used. Further, anevacuation unit may be a turbo pump provided with a cold trap. In thedeposition chamber which is evacuated with the cryopump, a hydrogenatom, a compound containing a hydrogen atom, such as water (H₂O), andthe like are evacuated, whereby the concentration of an impurity in theoxide insulating layer 316 formed in the deposition chamber can bereduced.

It is preferable to use a high-purity gas from which an impurity such ashydrogen, water, a hydroxyl group, or hydride is removed to aconcentration expressed by a level of ppm or ppb, as a sputtering gasused when the oxide insulating layer 316 is formed.

Next, second heat treatment (preferably 200° C. to 400° C. inclusive,for example, from 250° C. to 350° C. inclusive) is performed in an inertgas atmosphere or an oxygen gas atmosphere. For example, the second heattreatment is performed in a nitrogen atmosphere at 250° C. for one hour.With the second heat treatment, heat is applied while part of the oxidesemiconductor layer (a channel formation region) is in contact with theoxide insulating layer 316.

Through the above steps, the oxide semiconductor layer has a lowerresistance, that is, comes to be n-type when heat treatment fordehydration or dehydrogenation is performed on the formed oxidesemiconductor layer. Then, the oxide insulating layer is formed incontact with the oxide semiconductor layer. Accordingly, part of theoxide semiconductor layer is selectively in an oxygen excess state. As aresult, the channel formation region 313 overlapping with the gateelectrode layer 311 becomes i-type. At that time, a high-resistancesource region 314 a which has higher carrier concentration than at leastthe channel formation region 313 and overlaps with the source electrodelayer 315 a and a high-resistance drain region 314 b which has highercarrier concentration than at least the channel formation region 313 andoverlaps with the drain electrode layer 315 b are formed in aself-aligned manner. Through the above steps, the thin film transistor310 is formed (see FIG. 11D).

Further, heat treatment may be performed at 100° C. to 200° C. inclusivefor one hour to 30 hours inclusive in the air. In this embodiment, heattreatment is performed at 150° C. for 10 hours. This heat treatment maybe performed at a fixed heating temperature. Alternatively, thefollowing change in the heating temperature may be conducted pluraltimes repeatedly: the heating temperature is increased from a roomtemperature to a temperature of 100° C. to 200° C. inclusive and thendecreased to a room temperature. Further, this heat treatment may beperformed under a reduced pressure before formation of the oxideinsulating layer. Under a reduced pressure, the heating time can beshortened. With this heat treatment, hydrogen is introduced from theoxide semiconductor layer to the oxide insulating layer; thus, the thinfilm transistor can be normally off. Therefore, reliability of the thinfilm transistor can be improved. When a silicon oxide layer having a lotof defects is used as the oxide insulating layer, with this heattreatment, an impurity such as hydrogen, moisture, a hydroxyl group, orhydride contained in the oxide semiconductor layer can be diffused tothe oxide insulating layer so that the impurity in the oxidesemiconductor layer can be further reduced.

Note that by forming the high-resistance drain region 314 b (and thehigh-resistance source region 314 a) in the oxide semiconductor layeroverlapping with the drain electrode layer 315 b (and the sourceelectrode layer 315 a), reliability of the thin film transistor can beimproved. Specifically, by forming the high-resistance drain region 314b, the structure can be obtained in which conductivities of the drainelectrode layer 315 b, the high-resistance drain region 314 b, and thechannel formation region 313 vary in a stepwise fashion. Therefore, inthe case where the thin film transistor operates with the drainelectrode layer 315 b connected to a wiring for supplying a high powersupply potential V_(DD), the high-resistance drain region serves as abuffer and an electric field is not applied locally even if a highvoltage is applied between the gate electrode layer 311 and the drainelectrode layer 315 b; thus, the withstand voltage of the thin filmtransistor can be increased.

Further, the high-resistance source region or the high-resistance drainregion in the oxide semiconductor layer is formed in the entirethickness direction in the case where the thickness of the oxidesemiconductor layer is 15 nm or smaller. In the case where the thicknessof the oxide semiconductor layer is 30 nm or larger and 50 nm orsmaller, in part of the oxide semiconductor layer, that is, in a regionin the oxide semiconductor layer, which is in contact with the sourceelectrode layer or the drain electrode layer, and the vicinity thereof,resistance is reduced and the high-resistance source region or thehigh-resistance drain region is formed, while a region in the oxidesemiconductor layer, which is close to the gate insulating film, can bemade to be i-type.

A protective insulating layer may be additionally formed over the oxideinsulating layer 316. For example, a silicon nitride layer is formedwith an RF sputtering method. An RF sputtering method is preferable as aformation method of the protective insulating layer because of highproductivity. The protective insulating layer is formed using aninorganic insulating layer which does not contain impurities such asmoisture, a hydrogen ion, and OH⁻ and blocks entry of these from theoutside: for example, a silicon nitride layer, an aluminum nitridelayer, a silicon nitride oxide layer, an aluminum nitride oxide layer,or the like is used. In this embodiment, as the protective insulatinglayer, a protective insulating layer 303 is formed using a siliconnitride layer (see FIG. 11E).

In this embodiment, the substrate 300 over which layers up to the oxideinsulating layer 316 have been formed is heated to a temperature of 100°C. to 400° C., a sputtering gas from which hydrogen and moisture areremoved and which contains high-purity nitrogen is introduced, and asilicon target is used, whereby a silicon nitride layer is formed as theprotective insulating layer 303. In this case, the protective insulatinglayer 303 is preferably formed while removing moisture remaining in atreatment chamber, similarly to the oxide insulating layer 316.

Although not illustrated, a planarization insulating layer forplanarization may be provided over the protective insulating layer 303.

The logic circuits in Embodiments 1 and 2 including the above-describedthin film transistors can have stable electric characteristics and highreliability.

This embodiment can be implemented in appropriate combination with theother embodiments.

Embodiment 8

In this embodiment, an example of thin film transistors included in thelogic circuit in Embodiment 1 or Embodiment 2 is described.

One embodiment of a thin film transistor and a manufacturing method ofthe thin film transistor of this embodiment is described with referenceto FIGS. 12A to 12D.

FIG. 12D illustrates an example of a cross-sectional structure of a thinfilm transistor. A thin film transistor 360 illustrated in FIG. 12D isone of bottom gate thin film transistors, which is called a channelprotective thin film transistor (also referred to as a channel-stop thinfilm transistor), and is also referred to as an inverted staggered thinfilm transistor.

Although description is given using a single-gate thin film transistoras the thin film transistor 360, a multi-gate thin film transistorincluding a plurality of channel formation regions may be formed asneeded.

A process of manufacturing the thin film transistor 360 over a substrate320 is described below with reference to FIGS. 12A to 12D.

First, after a conductive layer is formed over the substrate 320 havingan insulating surface, the gate electrode layer 361 is formed in a firstphotolithography process. Note that a resist mask may be formed with aninkjet method. When the resist mask is formed with an inkjet method, aphotomask is not used; therefore, manufacturing costs can be reduced.

Further, the gate electrode layer 361 can be formed with a single-layerstructure or a layered structure using any of metal materials such asmolybdenum, titanium, chromium, tantalum, tungsten, aluminum, copper,neodymium, and scandium, and an alloy material including any of thesematerials as a main component.

Then, the gate insulating layer 322 is formed over the gate electrodelayer 361.

In this embodiment, a silicon oxynitride layer having a thickness ofsmaller than or equal to 100 nm is formed as the gate insulating layer322 with a plasma CVD method.

Then, an oxide semiconductor layer is formed to a thickness of 2 nm to200 nm inclusive over the gate insulating layer 322 and processed intoan island-shaped oxide semiconductor layer in a second photolithographyprocess. In this embodiment, the oxide semiconductor layer is formedwith a sputtering method with the use of an In—Ga—Zn—O-based metal oxidetarget.

In that case, the oxide semiconductor layer is preferably formed whileremoving moisture remaining in the treatment chamber. This is forpreventing hydrogen, a hydroxyl group, and moisture from being containedin the oxide semiconductor layer.

In order to remove moisture remaining in the treatment chamber, anentrapment vacuum pump is preferably used. For example, a cryopump, anion pump, or a titanium sublimation pump is preferably used. Further, anevacuation unit may be a turbo pump provided with a cold trap. In thedeposition chamber which is evacuated with the cryopump, a hydrogenatom, a compound containing a hydrogen atom, such as water (H₂O), andthe like are evacuated, whereby the concentration of an impurity in theoxide semiconductor layer formed in the deposition chamber can bereduced.

It is preferable to use a high-purity gas from which an impurity such ashydrogen, water, a hydroxyl group, or hydride is removed to aconcentration expressed by a level of ppm or ppb, as a sputtering gasused when the oxide semiconductor layer is formed.

Next, the oxide semiconductor layer is subjected to dehydration ordehydrogenation. The temperature of first heat treatment for dehydrationor dehydrogenation is higher than or equal to 400° C. and lower than orequal to 750° C., preferably higher than or equal to 400° C. and lowerthan the strain point of the substrate. Here, the substrate isintroduced into an electric furnace which is one of heat treatmentapparatuses, heat treatment is performed on the oxide semiconductorlayer in a nitrogen atmosphere at 450° C. for one hour, and then, theoxide semiconductor layer is not exposed to the air so that entry ofwater and hydrogen into the oxide semiconductor layer is prevented;thus, an oxide semiconductor layer 332 is obtained (see FIG. 12A).

Next, plasma treatment with a gas such as N₂O, N₂, or Ar is performed.With this plasma treatment, water adsorbed to a surface of an exposedportion of the oxide semiconductor layer is removed. Alternatively,plasma treatment may be performed using a mixed gas of oxygen and argon.

Next, after an oxide insulating layer is formed over the gate insulatinglayer 322 and the oxide semiconductor layer 332, a resit mask is formedin a third photolithography process. Selective etching is performed, sothat the oxide insulating layer 366 is formed. Then, the resist mask isremoved.

In this embodiment, a silicon oxide layer is formed to a thickness of200 nm as the oxide insulating layer 366 with a sputtering method. Thesubstrate temperature in film formation may be higher than or equal toroom temperature and lower than or equal to 300° C. and in thisembodiment, is 100° C. The silicon oxide layer can be formed with asputtering method in a rare gas (typically, argon) atmosphere, an oxygenatmosphere, or a mixed atmosphere of a rare gas (typically, argon) andoxygen. Further, a silicon oxide target or a silicon target can be usedas a target. For example, the silicon oxide layer can be formed using asilicon target with a sputtering method in an atmosphere containingoxygen and nitrogen.

In that case, the oxide insulating layer 366 is preferably formed whileremoving moisture remaining in the treatment chamber. This is forpreventing hydrogen, a hydroxyl group, and moisture from being containedin the oxide semiconductor layer 332 and the oxide insulating layer 366.

In order to remove moisture remaining in the treatment chamber, anentrapment vacuum pump is preferably used. For example, a cryopump, anion pump, or a titanium sublimation pump is preferably used. Further, anevacuation unit may be a turbo pump provided with a cold trap. In thedeposition chamber which is evacuated with the cryopump, a hydrogenatom, a compound containing a hydrogen atom, such as water (H₂O), andthe like are evacuated, whereby the concentration of an impurity in theoxide insulating layer 366 formed in the deposition chamber can bereduced.

It is preferable to use a high-purity gas from which an impurity such ashydrogen, water, a hydroxyl group, or hydride is removed to aconcentration expressed by a level of ppm or ppb, as a sputtering gasused when the oxide insulating layer 366 is formed.

Next, second heat treatment (preferably 200° C. to 400° C. inclusive,for example, from 250° C. to 350° C. inclusive) may be performed in aninert gas atmosphere or an oxygen gas atmosphere. For example, thesecond heat treatment is performed in a nitrogen atmosphere at 250° C.for one hour. With the second heat treatment, heat is applied while partof the oxide semiconductor layer (a channel formation region) is incontact with the oxide insulating layer 366.

In this embodiment, heat treatment is further performed on the oxidesemiconductor layer 332 over which the oxide insulating layers 366 isprovided and thus part of the oxide semiconductor layer 332 is exposed,in a nitrogen atmosphere, an inert gas atmosphere or under reducedpressure. By performing heat treatment in a nitrogen atmosphere, aninert gas atmosphere or under reduced pressure, the resistance ofregions of the oxide semiconductor layers 332, which are not coveredwith the oxide insulating layer 366 and are thus exposed, can beincreased. For example, heat treatment is performed in a nitrogenatmosphere at 250° C. for one hour.

With the heat treatment for the oxide semiconductor layer 332 providedwith the oxide insulating layer 366 in a nitrogen atmosphere, theresistance of the exposed regions of the oxide semiconductor layer 332is decreased. Thus, an oxide semiconductor layer 362 including regionswith different resistances (indicated as shaded regions and whiteregions in FIG. 12B) are formed.

Next, after a conductive layer is formed over the gate insulating layer322, the oxide semiconductor layer 362, and the oxide insulating layer366, a resist mask is formed in a fourth photolithography process.Selective etching is performed, so that a source electrode layer 365 aand a drain electrode layer 365 b are formed. Then, the resist mask isremoved (see FIG. 12C).

As the material of the source electrode layer 365 a and the drainelectrode layer 365 b, there are an element selected from Al, Cr, Cu,Ta, Ti, Mo, or W; an alloy layer containing a combination of any ofthese elements; and the like. The metal conductive layer may have asingle-layer structure or a layered structure of two or more layers.

Through the above steps, the oxide semiconductor layer comes to be in anoxygen-deficient state, accordingly the resistance thereof is reduced,that is, comes to be n-type when heat treatment for dehydration ordehydrogenation is performed on the formed oxide semiconductor layer.Then, the oxide insulating layer is formed in contact with the oxidesemiconductor layer. Accordingly, part of the oxide semiconductor layeris selectively in an oxygen excess state. As a result, the channelformation region 363 overlapping with the gate electrode layer 361becomes i-type. At that time, a high-resistance source region 364 awhich has higher carrier concentration than at least the channelformation region 363 and overlaps with the source electrode layer 365 aand a high-resistance drain region 364 b which has higher carrierconcentration than at least the channel formation region 363 andoverlaps with the drain electrode layer 365 b are formed in aself-aligned manner. Through the above steps, the thin film transistor360 is formed.

Further, heat treatment may be performed at 100° C. to 200° C. inclusivefor one hour to 30 hours inclusive in the air. In this embodiment, heattreatment is performed at 150° C. for 10 hours. This heat treatment maybe performed at a fixed heating temperature. Alternatively, thefollowing change in the heating temperature may be conducted pluraltimes repeatedly: the heating temperature is increased from a roomtemperature to a temperature of 100° C. to 200° C. inclusive and thendecreased to a room temperature. Further, this heat treatment may beperformed under a reduced pressure before formation of the oxideinsulating layer. Under a reduced pressure, the heating time can beshortened. With this heat treatment, hydrogen is introduced from theoxide semiconductor layer to the oxide insulating layer; thus, the thinfilm transistor can be normally off. Therefore, reliability of the thinfilm transistor can be improved.

Note that by forming the high-resistance drain region 364 b (and thehigh-resistance source region 364 a) in the oxide semiconductor layeroverlapping with the drain electrode layer 365 b (and the sourceelectrode layer 365 a), reliability of the thin film transistor can beimproved. Specifically, by forming the high-resistance drain region 364b, the structure can be obtained in which conductivities of the drainelectrode layer 365 b, the high-resistance drain region 364 b, and thechannel formation region 363 vary in a stepwise fashion. Therefore, inthe case where the thin film transistor operates with the drainelectrode layer 365 b connected to a wiring for supplying a high powersupply potential V_(DD), the high-resistance drain region serves as abuffer and an electric field is not applied locally even if a highvoltage is applied between the gate electrode layer 361 and the drainelectrode layer 365 b; thus, the withstand voltage of the thin filmtransistor can be increased.

A protective insulating layer 323 is formed over the source electrodelayer 365 a, the drain electrode layer 365 b, and the oxide insulatinglayer 366. In this embodiment, the protective insulating layer 323 isformed using a silicon nitride layer (see FIG. 12D).

Note that an oxide insulating layer may be further formed over thesource electrode layer 365 a, the drain electrode layer 365 b, and theoxide insulating layer 366, and the protective insulating layer 323 maybe stacked over the oxide insulating layer.

The logic circuits in Embodiments 1 and 2 including the above-describedthin film transistors can have stable electric characteristics and highreliability.

This embodiment can be implemented in appropriate combination with theother embodiments.

Embodiment 9

In this embodiment, an example of thin film transistors included in thelogic circuit in Embodiment 1 or Embodiment 2 is described.

One embodiment of a thin film transistor and a manufacturing method ofthe thin film transistor of this embodiment is described with referenceto FIGS. 13A to 13D.

Although description is given using a single-gate thin film transistoras the thin film transistor 350 in FIG. 13D, a multi-gate thin filmtransistor including a plurality of channel formation regions may beformed as needed.

A process of manufacturing the thin film transistor 350 over a substrate340 is described below with reference to FIGS. 13A to 13D.

First, after a conductive layer is formed over the substrate 340 havingan insulating surface, a gate electrode layer 351 is formed in a firstphotolithography process. In this embodiment, a tungsten layer is formedas the gate electrode layer 351 to a thickness of 150 nm.

Then, a gate insulating layer 342 is formed over the gate electrodelayer 351. In this embodiment, a silicon oxynitride layer is formed asthe gate insulating layer 342 to a thickness of smaller than or equal to100 nm with a plasma CVD method.

Next, after a conductive layer is formed over the gate insulating layer342, a resist mask is formed in a second photolithography process.Selective etching is performed, so that a source electrode layer 355 aand a drain electrode layer 355 b are formed. Then, the resist mask isremoved (see FIG. 13A).

Then, an oxide semiconductor layer 345 is formed (see FIG. 13B). In thisembodiment, the oxide semiconductor layer 345 is formed with asputtering method with the use of an In—Ga—Zn—O-based metal oxidetarget. The oxide semiconductor layer 345 is processed into anisland-shaped oxide semiconductor layer in a third photolithographyprocess.

In that case, the oxide semiconductor layer 345 is preferably formedwhile removing moisture remaining in the treatment chamber. This is forpreventing hydrogen, a hydroxyl group, and moisture from being containedin the oxide semiconductor layer 345.

In order to remove moisture remaining in the treatment chamber, anentrapment vacuum pump is preferably used. For example, a cryopump, anion pump, or a titanium sublimation pump is preferably used. Further, anevacuation unit may be a turbo pump provided with a cold trap. In thedeposition chamber which is evacuated with the cryopump, a hydrogenatom, a compound containing a hydrogen atom, such as water (H₂O), andthe like are evacuated, whereby the concentration of an impurity in theoxide semiconductor layer 345 formed in the deposition chamber can bereduced.

It is preferable to use a high-purity gas from which an impurity such ashydrogen, water, a hydroxyl group, or hydride is removed to aconcentration expressed by a level of ppm or ppb, as a sputtering gasused when the oxide semiconductor layer 345 is formed.

Next, the oxide semiconductor layer is subjected to dehydration ordehydrogenation. The temperature of first heat treatment for dehydrationor dehydrogenation is higher than or equal to 400° C. and lower than orequal to 750° C., preferably higher than or equal to 400° C. and lowerthan the strain point of the substrate. Here, the substrate isintroduced into an electric furnace which is one of heat treatmentapparatuses, heat treatment is performed on the oxide semiconductorlayer in a nitrogen atmosphere at 450° C. for one hour, and then, theoxide semiconductor layer is not exposed to the air so that entry ofwater and hydrogen into the oxide semiconductor layer is prevented;thus, an oxide semiconductor layer 346 is obtained (see FIG. 13C).

As the first heat treatment, GRTA may be performed as follows. Thesubstrate is transferred and put in an inert gas which has been heatedto a high temperature of 650° C. to 700° C., heated for several minutes,and transferred and taken out of the inert gas which has been heated toa high temperature. GRTA enables high-temperature heat treatment in ashort time.

An oxide insulating layer 356 which serves as a protective insulatinglayer and is in contact with the oxide semiconductor layer 346 isformed.

The oxide insulating layer 356 can be formed to a thickness of longerthan or equal to 1 nm with a sputtering method or the like asappropriate, which is a method with which an impurity such as water orhydrogen does not enter the oxide insulating layer 356. When hydrogen iscontained in the oxide insulating layer 356, entry of the hydrogen tothe oxide semiconductor layer or extraction of oxygen in the oxidesemiconductor layer by the hydrogen is caused, whereby a backchannel ofthe oxide semiconductor layer comes to have a lower resistance (to ben-type) and thus a parasitic channel might be formed. Therefore, it isimportant that a formation method in which hydrogen is not used isemployed so that the oxide insulating layer 356 is formed containing aslittle hydrogen as possible.

In this embodiment, a silicon oxide layer is formed to a thickness of200 nm as the oxide insulating layer 356 with a sputtering method. Thesubstrate temperature in film formation may be higher than or equal toroom temperature and lower than or equal to 300° C. and in thisembodiment, is 100° C. The silicon oxide layer can be formed with asputtering method in a rare gas (typically, argon) atmosphere, an oxygenatmosphere, or a mixed atmosphere of a rare gas (typically, argon) andoxygen. Further, a silicon oxide target or a silicon target can be usedas a target. For example, the silicon oxide layer can be formed using asilicon target with a sputtering method in an atmosphere containingoxygen and nitrogen. The oxide insulating layer 356 which is formed incontact with the oxide semiconductor layer in a region which is in anoxygen-deficient state and thus has a lower resistance is formed usingan inorganic insulating layer that does not contain impurities such asmoisture, a hydrogen ion, and OH⁻ and blocks entry of such impuritiesfrom the outside, typically, a silicon oxide layer, a silicon oxynitridelayer, an aluminum oxide layer, or an aluminum oxynitride layer.

In that case, the oxide insulating layer 356 is preferably formed whileremoving moisture remaining in the treatment chamber. This is forpreventing hydrogen, a hydroxyl group, and moisture from being containedin the oxide semiconductor layer 346 and the oxide insulating layer 356.

In order to remove moisture remaining in the treatment chamber, anentrapment vacuum pump is preferably used. For example, a cryopump, anion pump, or a titanium sublimation pump is preferably used. Further, anevacuation unit may be a turbo pump provided with a cold trap. In thedeposition chamber which is evacuated with the cryopump, a hydrogenatom, a compound containing a hydrogen atom, such as water (H₂O), andthe like are evacuated, whereby the concentration of an impurity in theoxide insulating layer 356 formed in the deposition chamber can bereduced.

It is preferable to use a high-purity gas from which an impurity such ashydrogen, water, a hydroxyl group, or hydride is removed to aconcentration expressed by a level of ppm or ppb, as a sputtering gasused when the oxide insulating layer 356 is formed.

Next, second heat treatment (preferably 200° C. to 400° C. inclusive,for example, from 250° C. to 350° C. inclusive) is performed in an inertgas atmosphere or an oxygen gas atmosphere. For example, the second heattreatment is performed in a nitrogen atmosphere at 250° C. for one hour.With the second heat treatment, heat is applied while part of the oxidesemiconductor layer (a channel formation region) is in contact with theoxide insulating layer 356.

Through the above steps, the oxide semiconductor layer which is in anoxygen-deficient state and thus has a lower resistance throughdehydration or dehydrogenation is brought into an oxygen-excess state.As a result, an i-type oxide semiconductor layer 352 having a highresistance is formed. Through the above steps, the thin film transistor350 is formed.

Further, heat treatment may be performed at 100° C. to 200° C. inclusivefor one hour to 30 hours inclusive in the air. In this embodiment, heattreatment is performed at 150° C. for 10 hours. This heat treatment maybe performed at a fixed heating temperature. Alternatively, thefollowing change in the heating temperature may be conducted pluraltimes repeatedly: the heating temperature is increased from a roomtemperature to a temperature of 100° C. to 200° C. inclusive and thendecreased to a room temperature. Further, this heat treatment may beperformed under a reduced pressure. Under a reduced pressure, theheating time can be shortened. With this heat treatment, hydrogen isintroduced from the oxide semiconductor layer to the oxide insulatinglayer; thus, the thin film transistor can be normally off. Therefore,reliability of the semiconductor device can be improved.

A protective insulating layer 343 may be additionally formed over theoxide insulating layer 356. For example, a silicon nitride layer isformed with an RF sputtering method. In this embodiment, as theprotective insulating layer, the protective insulating layer 343 isformed using a silicon nitride layer (see FIG. 13D).

Note that a planarization insulating layer for planarization may beprovided over the protective insulating layer 343.

The logic circuits in Embodiments 1 and 2 including the above-describedthin film transistors can have stable electric characteristics and highreliability

This embodiment can be implemented in appropriate combination with theother embodiments.

Embodiment 10

In this embodiment, an example of thin film transistors included in thelogic circuit in Embodiment 1 or Embodiment 2 is described.

In this embodiment, an example which is partly different from Embodiment7 in the manufacturing process of a thin film transistor will bedescribed with reference to FIG. 14. Since FIG. 14 is the same as FIGS.11A to 11E except for part of the steps, common reference numerals areused for the same portions, and detailed description of the sameportions is omitted.

First, a gate electrode layer 381 is formed over a substrate 370, and afirst gate insulating layer 372 a and a second gate insulating layer 372b are stacked thereover in accordance with Embodiment 7. In thisembodiment, a gate insulating layer has a two layer structure in which anitride insulating layer and an oxide insulating layer are used as thefirst gate insulating layer 372 a and the second gate insulating layer372 b, respectively.

As the oxide insulating layer, a silicon oxide layer, a siliconoxynitride layer, an aluminum oxide layer, an aluminum oxynitride layer,or the like may be used. As the nitride insulating layer, a siliconnitride layer, a silicon nitride oxide layer, an aluminum nitride layer,an aluminum nitride oxide layer, or the like may be used.

In this embodiment, the gate insulating layer may have a structure wherea silicon nitride layer and a silicon oxide layer are stacked from thegate electrode layer 381 side. A silicon nitride layer (SiN_(y) (y>0))with a thickness of 50 nm to 200 nm inclusive (50 nm in this embodiment)is formed with a sputtering method as a first gate insulating layer 372a and a silicon oxide layer (SiO_(x) (x>0)) with a thickness of 5 nm to300 nm inclusive (100 nm in this embodiment) is stacked as a second gateinsulating layer 372 b over the first gate insulating layer 372 a; thus,the gate insulating layer is formed.

Next, the oxide semiconductor layer is formed and then processed into anisland-shaped oxide semiconductor layer in a photolithography process.In this embodiment, the oxide semiconductor layer is formed with asputtering method with the use of an In—Ga—Zn—O-based metal oxidetarget.

In that case, the oxide semiconductor layer is preferably formed whileremoving moisture remaining in the treatment chamber. This is forpreventing hydrogen, a hydroxyl group, and moisture from being containedin the oxide semiconductor layer.

In order to remove moisture remaining in the treatment chamber, anentrapment vacuum pump is preferably used. For example, a cryopump, anion pump, or a titanium sublimation pump is preferably used. Further, anevacuation unit may be a turbo pump provided with a cold trap. In thedeposition chamber which is evacuated with the cryopump, a hydrogenatom, a compound containing a hydrogen atom, such as water (H₂O), andthe like are evacuated, whereby the concentration of an impurity in theoxide semiconductor layer formed in the deposition chamber can bereduced.

It is preferable to use a high-purity gas from which an impurity such ashydrogen, water, a hydroxyl group, or hydride is removed to aconcentration expressed by a level of ppm or ppb, as a sputtering gasused when the oxide semiconductor layer is formed.

Next, the oxide semiconductor layer is subjected to dehydration ordehydrogenation. The temperature of first heat treatment for dehydrationor dehydrogenation is higher than or equal to 400° C. and lower than orequal to 750° C., preferably higher than or equal to 425° C. Note thatin the case of the temperature that is 425° C. or more, the heattreatment time may be one hour or less, whereas in the case of thetemperature less than 425° C., the heat treatment time is longer thanone hour. Here, the substrate is introduced into an electric furnacewhich is one of heat treatment apparatuses, heat treatment is performedon the oxide semiconductor layer in a nitrogen atmosphere, and then, theoxide semiconductor layer is not exposed to the air so that entry ofwater and hydrogen into the oxide semiconductor layer is prevented.Thus, the oxide semiconductor layer is obtained. After that, ahigh-purity oxygen gas, a high-purity N₂O gas, or an ultra-dry air (witha dew point of −40° C. or less, preferably −60° C. or less) isintroduced into the same furnace and cooling is performed. It ispreferable that water, hydrogen, and the like be not contained in theoxygen gas or the N₂O gas. Alternatively, the purity of the oxygen gasor the N₂O gas which is introduced into the heat treatment apparatus ispreferably 6N (99.9999%) or more, more preferably 7N (99.99999%) or more(i.e., the impurity concentration of the oxygen gas or the N₂O gas ispreferably 1 ppm or lower, more preferably 0.1 ppm or lower).

Note that the heat treatment apparatus is not limited to the electricfurnace, and for example, may be an RTA (rapid thermal annealing)apparatus such as a GRTA (gas rapid thermal annealing) apparatus or anLRTA (lamp rapid thermal annealing) apparatus. An LRTA apparatus is anapparatus for heating an object to be processed by radiation of light(electromagnetic wave) emitted from a lamp such as a halogen lamp, ametal halide lamp, a xenon arc lamp, a carbon arc lamp, a high pressuresodium lamp, or a high pressure mercury lamp. An LRTA apparatus may beprovided with not only a lamp but also a device for heating an object tobe processed by heat conduction or heat radiation from a heater such asa resistance heater. GRTA is a method for performing heat treatmentusing a high-temperature gas. As the gas, an inert gas which does notreact with an object to be processed with heat treatment, such asnitrogen or a rare gas such as argon is used. Alternatively, the heattreatment may be performed at 600° C. to 750° C. for several minutes byan RTA method.

Moreover, after the first heat treatment for dehydration ordehydrogenation, heat treatment may be performed at from 200° C. to 400°C. inclusive, preferably from 200° C. to 300° C. inclusive, in an oxygengas atmosphere or a N₂O gas atmosphere.

The first heat treatment of the oxide semiconductor layer may beperformed before processing the oxide semiconductor layer into theisland-like oxide semiconductor layer. In that case, after the firstheat treatment, the substrate is taken out of the heating apparatus anda photolithography step is performed.

Through the above process, an entire region of the oxide semiconductorlayer is made to be in an oxygen excess state; thus, the oxidesemiconductor layer has higher resistance, that is, the oxidesemiconductor layer becomes i-type. Accordingly, an oxide semiconductorlayer 382 whose entire region is i-type is obtained.

Next, a conductive layer is formed over the oxide semiconductor layer382. A resist mask is formed in a photolithography process. Etching isperformed selectively, whereby a source electrode layer 385 a and adrain electrode layer 385 b are formed. Then, an oxide insulating layer386 is formed with a sputtering method.

In that case, the oxide insulating layer 386 is preferably formed whileremoving moisture remaining in the treatment chamber. This is forpreventing hydrogen, a hydroxyl group, and moisture from being containedin the oxide semiconductor layer 382 and the oxide insulating layer 386.

In order to remove moisture remaining in the treatment chamber, anentrapment vacuum pump is preferably used. For example, a cryopump, anion pump, or a titanium sublimation pump is preferably used. Further, anevacuation unit may be a turbo pump provided with a cold trap. In thedeposition chamber which is evacuated with the cryopump, a hydrogenatom, a compound containing a hydrogen atom, such as water (H₂O), andthe like are evacuated, whereby the concentration of an impurity in theoxide insulating layer 386 formed in the deposition chamber can bereduced.

It is preferable to use a high-purity gas from which an impurity such ashydrogen, water, a hydroxyl group, or hydride is removed to aconcentration expressed by a level of ppm or ppb, as a sputtering gasused when the oxide insulating layer 386 is formed.

Through the above steps, a thin film transistor 380 can be formed.

Next, in order to reduce variation in electric characteristics of thethin film transistors, heat treatment (preferably at 150° C. or higherand lower than 350° C.) may be performed in an inert gas atmosphere or anitrogen gas atmosphere. For example, the heat treatment is performed ina nitrogen atmosphere at 250° C. for one hour.

Further, heat treatment may be performed at 100° C. to 200° C. inclusivefor one hour to 30 hours inclusive in the air. In this embodiment, heattreatment is performed at 150° C. for 10 hours. This heat treatment maybe performed at a fixed heating temperature. Alternatively, thefollowing change in the heating temperature may be conducted pluraltimes repeatedly: the heating temperature is increased from a roomtemperature to a temperature of 100° C. to 200° C. inclusive and thendecreased to a room temperature. Under a reduced pressure, the heatingtime can be shortened. With this heat treatment, hydrogen is introducedfrom the oxide semiconductor layer to the oxide insulating layer; thus,the thin film transistor can be normally off. Therefore, reliability ofthe thin film transistor can be improved.

A protective insulating layer 373 is formed over the oxide insulatinglayer 386. In this embodiment, the protective insulating layer 373 isformed to a thickness of 100 nm with the use of a silicon nitride layerwith a sputtering method.

The protective insulating layer 373 and the first gate insulating layer372 a each formed using a nitride insulating layer do not containimpurities such as moisture, hydrogen, hydride, and hydroxide and has aneffect of blocking entry of these from the outside.

Therefore, in a manufacturing process after formation of the protectiveinsulating layer 373, entry of an impurity such as moisture from theoutside can be prevented. Further, even after a device is completed as asemiconductor device such as a liquid crystal display device, entry ofan impurity such as moisture from the outside can be prevented in thelong term; therefore, long-term reliability of the device can beachieved.

Further, part of the insulating layers between the protective insulatinglayer 373 formed using a nitride insulating layer and the first gateinsulating layer 372 a may be removed so that the protective insulatinglayer 373 and the first gate insulating layer 372 a are in contact witheach other.

Accordingly, impurities such as moisture, hydrogen, hydride, andhydroxide in the oxide semiconductor layer are reduced as much aspossible and entry of such impurities is prevented, so that theconcentration of impurities in the oxide semiconductor layer can bemaintained to be low.

Although not illustrated, a planarization insulating layer forplanarization may be provided over the protective insulating layer 373.

The logic circuits in Embodiments 1 and 2 including the above-describedthin film transistors can have stable electric characteristics and highreliability

This embodiment can be implemented in appropriate combination with theother embodiments.

Embodiment 11

In this embodiment, examples of semiconductor devices each including thelogic circuit in Embodiment 1 or Embodiment 2 are described.Specifically, appearances and a cross section of liquid crystal displaypanels in each of which a driver circuit includes the logic circuit inEmbodiment 1 or Embodiment 2 are described with reference to FIGS. 15Ato 15C. FIGS. 15A and 15C are plan views of panels in each of which thinfilm transistors 4010 and 4011 and a liquid crystal element 4013 aresealed between a first substrate 4001 and a second substrate 4006 with asealant 4005. FIG. 15B is a cross-sectional view taken along a line M-Nin FIG. 15A or 15C.

The sealant 4005 is provided so as to surround a pixel portion 4002 anda scan line driver circuit 4004 which are provided over the firstsubstrate 4001. The second substrate 4006 is provided over the pixelportion 4002 and the scan line driver circuit 4004. Consequently, thepixel portion 4002 and the scan line driver circuit 4004 are sealedtogether with a liquid crystal layer 4008, by the first substrate 4001,the sealant 4005, and the second substrate 4006. A signal line drivercircuit 4003 that is formed using a single crystal semiconductor film ora polycrystalline semiconductor film over a substrate separatelyprepared is mounted in a region that is different from the regionsurrounded by the sealant 4005 over the first substrate 4001.

Note that there is no particular limitation on the connection method ofthe driver circuit which is separately formed, and a COG method, a wirebonding method, a TAB method, or the like can be used. FIG. 15Aillustrates an example in which the signal line driver circuit 4003 ismounted by a COG method. FIG. 15C illustrates an example in which thesignal line driver circuit 4003 is mounted by a TAB method.

The pixel portion 4002 and the scan line driver circuit 4004 providedover the first substrate 4001 include a plurality of thin filmtransistors. FIG. 15B illustrates the thin film transistor 4010 includedin the pixel portion 4002 and the thin film transistor 4011 included inthe scan line driver circuit 4004, as an example. Insulating layers4041, 4042, and 4021 are provided over the thin film transistors 4010and 4011.

Any of the thin film transistors of Embodiments 3 to 10 can be used asappropriate as the thin film transistors 4010 and 4011, and they can beformed using steps and materials similar to those for the thin filmtransistors of Embodiments 3 to 10. Hydrogen or water is reduced in theoxide semiconductor layers of the thin film transistors 4010 and 4011.Thus, the thin film transistors 4010 and 4011 are highly reliable thinfilm transistors. In this embodiment, the thin film transistors 4010 and4011 are n-channel thin film transistors.

A conductive layer 4040 is provided over part of the insulating layer4021, which overlaps with a channel formation region of an oxidesemiconductor layer in the thin film transistor 4011. The conductivelayer 4040 is provided in the position overlapping with the channelformation region of the oxide semiconductor layer, whereby the amount ofchange in threshold voltage of the thin film transistor 4011 before andafter the BT test can be reduced. A potential of the conductive layer4040 may be the same or different from that of a gate electrode layer ofthe thin film transistor 4011. The conductive layer 4040 can alsofunction as a second gate electrode layer. Further, the potential of theconductive layer 4040 may be GND, 0 V, or the conductive layer 4040 maybe in a floating state. Note that the conductive layer 4040 is notnecessarily provided.

A pixel electrode layer 4030 included in the liquid crystal element 4013is electrically connected to a source or drain electrode layer of thethin film transistor 4010. A counter electrode layer 4031 of the liquidcrystal element 4013 is formed on the second substrate 4006. A portionwhere the pixel electrode layer 4030, the counter electrode layer 4031,and the liquid crystal layer 4008 overlap with one another correspondsto the liquid crystal element 4013. Note that the pixel electrode layer4030 and the counter electrode layer 4031 are provided with aninsulating layer 4032 and an insulating layer 4033 functioning asalignment films, respectively, and the liquid crystal layer 4008 issandwiched between the electrode layers with the insulating layers 4032and 4033 therebetween.

Note that a light-transmitting substrate can be used as the firstsubstrate 4001 and the second substrate 4006; glass, ceramics, orplastics can be used. The plastic may be a fiberglass-reinforcedplastics (FRP) plate, a polyvinyl fluoride (PVF) film, a polyester film,or an acrylic resin film.

Reference numeral 4035 denotes a columnar spacer obtained by selectiveetching of an insulating film, and the columnar spacer is provided inorder to control the distance (a cell gap) between the pixel electrodelayer 4030 and the counter electrode layer 4031. Alternatively, aspherical spacer may be used as the spacer 4035. The counter electrodelayer 4031 is electrically connected to a common potential line formedover the substrate where the thin film transistor 4010 is formed. Thecounter electrode layer 4031 and the common potential line can beelectrically connected to each other through conductive particlesprovided between the pair of substrates using the common connectionportion. Note that the conductive particles are included in the sealant4005.

Alternatively, liquid crystal exhibiting a blue phase for which analignment film is unnecessary may be used. A blue phase is one of liquidcrystal phases, which is generated just before a cholesteric phasechanges into an isotropic phase while the temperature of cholestericliquid crystal is increased. Since the blue phase is only generatedwithin a narrow temperature range, a liquid crystal compositioncontaining a chiral agent at 5 wt % or more is used for the liquidcrystal layer 4008 in order to improve the temperature range. The liquidcrystal composition including liquid crystal exhibiting a blue phase anda chiral agent has a short response time of 1 msec or less and isoptically isotropic; therefore, alignment treatment is not necessary andviewing angle dependence is small. In addition, since an alignment filmdoes not need to be provided and rubbing treatment is unnecessary,electrostatic breakdown caused by the rubbing treatment can be preventedand defects and damage of the liquid crystal display device can bereduced in the manufacturing process. Thus, productivity of the liquidcrystal display device can be increased. A thin film transistor formedusing an oxide semiconductor layer particularly has a possibility thatelectric characteristics of the thin film transistor may fluctuatesignificantly by the influence of static electricity and deviate fromthe designed range. Therefore, it is more effective to use a blue phaseliquid crystal material for a liquid crystal display device including athin film transistor formed using an oxide semiconductor layer.

Note that this embodiment can also be applied to a transflective liquidcrystal display device in addition to a transmissive liquid crystaldisplay device.

Although a polarizing plate is provided on the outer surface of thesubstrate (on the viewer side) and a coloring layer and an electrodelayer used for a display element are sequentially provided on the innersurface of the substrate in the example of the liquid crystal displaydevice, the polarizing plate may be provided on the inner surface of thesubstrate. The stacked structure of the polarizing plate and thecoloring layer is not limited to that in this embodiment and may be setas appropriate depending on materials of the polarizing plate and thecoloring layer or conditions of the manufacturing process. Further, alight-blocking film serving as a black matrix may be provided in aportion other than the display portion.

Over the thin film transistors 4011 and 4010, the insulating layer 4041is formed in contact with the oxide semiconductor layers. The insulatinglayer 4041 can be formed using a material and a method which are similarto those of the oxide insulating layer described in any of theembodiments. Here, as the insulating layer 4041, a silicon oxide layeris formed by a sputtering method. Further, the protective insulatinglayer 4042 is formed on and in contact with the insulating layer 4041.The protective insulating layer 4042 can be formed using a siliconnitride layer, for example. In order to reduce the surface roughnesscaused by the thin film transistors, the insulating layer 4021 servingas a planarization insulating layer is formed.

The insulating layer 4021 is formed as a planarization insulating layer.As the insulating layer 4021, an organic material having heat resistancesuch as polyimide, acrylic, benzocyclobutene, polyamide, or epoxy can beused. Other than such organic materials, it is possible to use alow-dielectric constant material (a low-k material), a siloxane-basedresin, PSG (phosphosilicate glass), BPSG (borophosphosilicate glass), orthe like. Note that the insulating layer 4021 may be formed by stackinga plurality of insulating layers formed of these materials.

There is no particular limitation on the method for forming theinsulating layer 4021. The insulating layer 4021 can be formed,depending on the material, by a method such as a sputtering method, anSOG method, a spin coating method, a dipping method, a spray coatingmethod, or a droplet discharge method (e.g., an inkjet method, screenprinting, or offset printing), or a tool (equipment) such as a doctorknife, a roll coater, a curtain coater, or a knife coater. A baking stepof the insulating layer 4021 also serves as annealing of thesemiconductor layer, whereby a semiconductor device can be manufacturedefficiently.

The pixel electrode layer 4030 and the counter electrode layer 4031 canbe formed using a light-transmitting conductive material such as indiumtin oxide (ITO), indium zinc oxide (IZO) in which zinc oxide (ZnO) ismixed in indium oxide, a conductive material in which silicon oxide(SiO₂) is mixed in indium oxide, organic indium, organotin, indium oxidecontaining tungsten oxide, indium zinc oxide containing tungsten oxide,indium oxide containing titanium oxide, indium tin oxide containingtitanium oxide, or the like. Further, in the case where alight-transmitting property is not needed or a reflecting property isneeded in a reflective liquid crystal display device, the pixelelectrode layer 4030 and the counter electrode layer 4031 can be formedusing one or more kinds of materials selected from a metal such astungsten (W), molybdenum (Mo), zirconium (Zr), hafnium (Hf), vanadium(V), niobium (Nb), tantalum (Ta), chromium (Cr), cobalt (Co), nickel(Ni), titanium (Ti), platinum (Pt), aluminum (Al), copper (Cu), andsilver (Ag); an alloy of these metals; and a nitride of these metals.

A conductive composition containing a conductive high molecule (alsoreferred to as a conductive polymer) can be used for the pixel electrodelayer 4030 and the counter electrode layer 4031. The pixel electrodeformed using the conductive composition preferably has a sheetresistance of less than or equal to 10000 ohms per square and atransmittance of greater than or equal to 70% at a wavelength of 550 nm.Further, the resistivity of the conductive high molecule contained inthe conductive composition is preferably less than or equal to 0.1 Ω·cm.

As the conductive high molecule, a so-called 7 c-electron conjugatedconductive polymer can be used. For example, polyaniline or a derivativethereof, polypyrrole or a derivative thereof, polythiophene or aderivative thereof, a copolymer of two or more kinds of them, and thelike can be given.

Further, a variety of signals and potentials are supplied to the signalline driver circuit 4003 which is formed separately, the scan linedriver circuit 4004, or the pixel portion 4002 from an FPC 4018.

A connection terminal electrode 4015 is formed using the same conductivefilm as the pixel electrode layer 4030 included in the liquid crystalelement 4013, and a terminal electrode 4016 is formed using the sameconductive film as source and drain electrode layers of the thin filmtransistors 4010 and 4011.

The connection terminal electrode 4015 is electrically connected to aterminal included in the FPC 4018 through an anisotropic conductive film4019.

Note that FIGS. 15A to 15C illustrate examples in each of which thesignal line driver circuit 4003 is formed separately and mounted on thefirst substrate 4001; however, the present invention is not limited tothis structure. The scan line driver circuit may be separately formedand then mounted, or only part of the signal line driver circuit or partof the scan line driver circuit may be separately formed and thenmounted.

A black matrix (a light-blocking layer), an optical member (an opticalsubstrate) such as a polarizing member, a retardation member, or ananti-reflection member, and the like are provided as appropriate. Forexample, circular polarization may be employed by using a polarizingsubstrate and a retardation substrate. In addition, a backlight, asidelight, or the like may be used as a light source.

In an active matrix liquid crystal display device, display patterns areformed on a screen by driving of pixel electrodes that are arranged inmatrix. Specifically, voltage is applied between a selected pixelelectrode and a counter electrode corresponding to the pixel electrode,and thus, a liquid crystal layer disposed between the pixel electrodeand the counter electrode is optically modulated. This opticalmodulation is recognized as a display pattern by a viewer.

A liquid crystal display device has a problem in that, when displaying amoving image, image sticking occurs or the moving image is blurredbecause the response speed of liquid crystal molecules themselves islow. As a technique for improving moving image characteristics of aliquid crystal display device, there is a driving technique so-calledblack insertion by which an entirely black image is displayed everyother frame.

Alternatively, a driving method called double-frame rate driving may beemployed in which a vertical synchronizing frequency is 1.5 times ormore, preferably 2 times or more as high as a normal verticalsynchronizing frequency, whereby response speed is improved.

Furthermore, as a technique for improving moving image characteristicsof a liquid crystal display device, there is another driving techniquein which, as a backlight, a surface light source including a pluralityof LED (light-emitting diode) light sources or a plurality of EL lightsources is used, and each light source included in the surface lightsource is independently driven so as to perform intermittent lighting inone frame period. As the surface light source, three or more kinds ofLEDs may be used, or a white-light-emitting LED may be used. Since aplurality of LEDs can be controlled independently, the timing at whichthe LEDs emit light can be synchronized with the timing at which opticalmodulation of a liquid crystal layer is switched. In this drivingtechnique, part of LEDs can be turned off. Therefore, especially in thecase of displaying an image in which the proportion of a black imagearea in one screen is high, a liquid crystal display device can bedriven with low power consumption.

When combined with any of these driving techniques, a liquid crystaldisplay device can have better display characteristics such as movingimage characteristics than conventional liquid crystal display devices.

Since the thin film transistor is easily broken due to staticelectricity or the like, the protective circuit is preferably providedover the same substrate as the pixel portion and the driver circuitportion. The protective circuit is preferably formed using a non-linearelement including an oxide semiconductor layer. For example, aprotective circuit is provided between the pixel portion, and a scanline input terminal and a signal line input terminal. In thisembodiment, a plurality of protective circuits are provided so that thepixel transistor and the like are not broken when surge voltage due tostatic electricity or the like is applied to the scan line, the signalline, or a capacitor bus line. Accordingly, the protective circuit has astructure for releasing electric charge to a common wiring when surgevoltage is applied to the protective circuit. The protective circuitincludes non-linear elements which are arranged in parallel with thescan line. Each of the non-linear elements includes a two-terminalelement such as a diode or a three-terminal element such as atransistor. For example, the non-linear element can be formed throughthe same steps as the thin film transistor of the pixel portion. Forexample, characteristics similar to those of a diode can be achieved byconnecting a gate terminal to a drain terminal.

Further, for the liquid crystal display module, a twisted nematic (TN)mode, an in-plane-switching (IPS) mode, a fringe field switching (FFS)mode, an axially symmetric aligned micro-cell (ASM) mode, an opticallycompensated birefringence (OCB) mode, a ferroelectric liquid crystal(FLC) mode, an antiferroelectric liquid crystal (AFLC) mode, or the likecan be used.

There is no particular limitation in the semiconductor device disclosedin this specification, and a liquid crystal display device including aTN liquid crystal, an OCB liquid crystal, an STN liquid crystal, a VAliquid crystal, an ECB liquid crystal, a GH liquid crystal, a polymerdispersed liquid crystal, a discotic liquid crystal, or the like can beused. In particular, a normally black liquid crystal panel such as atransmissive liquid crystal display device utilizing a verticalalignment (VA) mode is preferable. Some examples are given as a verticalalignment mode. For example, an MVA (multi-domain vertical alignment)mode, a PVA (patterned vertical alignment) mode, an ASV mode, or thelike can be employed.

Further, this embodiment can also be applied to a VA liquid crystaldisplay device. The VA liquid crystal display device has a kind of formin which alignment of liquid crystal molecules in a liquid crystaldisplay panel is controlled. In the VA liquid crystal display device,liquid crystal molecules are aligned in a vertical direction withrespect to a panel surface when no voltage is applied. Further, a methodcalled multi-domain or multi-domain design, by which a pixel is dividedinto some regions (subpixels), and liquid crystal molecules are alignedin different directions in their respective regions, can be used.

This embodiment can be implemented in appropriate combination with anyof the other embodiments.

Embodiment 12

In this embodiment, examples of semiconductor devices each including thelogic circuit in Embodiment 1 or Embodiment 2 are described.Specifically, examples of manufacturing active-matrix light-emittingdisplay devices in each of which a driver circuit includes the logiccircuit in Embodiment 1 or Embodiment 2 are described. Note that in thisembodiment, examples of light-emitting display devices includinglight-emitting elements utilizing electroluminescence will be described.

Light-emitting elements utilizing electroluminescence are classifiedaccording to whether a light-emitting material is an organic compound oran inorganic compound. In general, the former is referred to as anorganic EL element, and the latter is referred to as an inorganic ELelement.

In an organic EL element, by application of voltage to a light-emittingelement, electrons and holes are separately injected from a pair ofelectrodes into a layer containing a light-emitting organic compound,and current flows. Then, the carriers (electrons and holes) recombine,thereby emitting light. Owing to such a mechanism, this light-emittingelement is referred to as a current-excitation light-emitting element.

The inorganic EL elements are classified according to their elementstructures into a dispersion-type inorganic EL element and a thin-filminorganic EL element. A dispersion-type inorganic EL element has alight-emitting layer where particles of a light-emitting material aredispersed in a binder, and its light emission mechanism isdonor-acceptor recombination type light emission that utilizes a donorlevel and an acceptor level. A thin-film inorganic EL element has astructure where a light-emitting layer is sandwiched between dielectriclayers, which are further sandwiched between electrodes, and its lightemission mechanism is localized type light emission that utilizesinner-shell electron transition of metal ions. Note that an example ofan organic EL element as a light-emitting element is described here.

FIG. 16 illustrates an example of a pixel structure to which digitaltime grayscale driving can be applied, as an example of a semiconductordevice.

A structure and operation of a pixel to which digital time grayscaledriving can be applied are described. Here, one pixel includes twon-channel transistors each of which includes an oxide semiconductorlayer as a channel formation region.

A pixel 6400 includes a switching transistor 6401, a driving transistor6402, a light-emitting element 6404, and a capacitor 6403. A gate of theswitching transistor 6401 is connected to a scan line 6406, a firstelectrode (one of a source electrode and a drain electrode) of theswitching transistor 6401 is connected to a signal line 6405, and asecond electrode (the other of the source electrode and the drainelectrode) of the switching transistor 6401 is connected to a gate ofthe driving transistor 6402. The gate of the driving transistor 6402 isconnected to a power supply line 6407 through the capacitor 6403, afirst electrode of the driving transistor 6402 is connected to the powersupply line 6407, and a second electrode of the driving transistor 6402is connected to a first electrode (pixel electrode) of thelight-emitting element 6404. A second electrode of the light-emittingelement 6404 corresponds to a common electrode. The common electrode iselectrically connected to a common potential line 6408 provided over thesame substrate as the common electrode.

The second electrode (common electrode) of the light-emitting element6404 is set to a low power supply potential. Note that the low powersupply potential is a potential satisfying the low power supplypotential<a high power supply potential with reference to the high powersupply potential that is set to the power supply line 6407. As the lowpower supply potential, GND, 0 V, or the like may be employed, forexample. A potential difference between the high power supply potentialand the low power supply potential is applied to the light-emittingelement 6404 and current is supplied to the light-emitting element 6404,so that the light-emitting element 6404 emits light. Here, in order tomake the light-emitting element 6404 emit light, each potential is setso that the potential difference between the high power supply potentialand the low power supply potential is higher than a forward voltage dropof the light-emitting element 6404.

When the gate capacitance of the driving transistor 6402 is used as asubstitute for the capacitor 6403, the capacitor 6403 can be omitted.The gate capacitance of the driving transistor 6402 may be formedbetween a channel formation region and a gate electrode.

Here, in the case of using a voltage-input voltage driving method, avideo signal to enable the driving transistor 6402 to completely turn onor off, is input to the gate of the driving transistor 6402. That is,the driving transistor 6402 operates in a linear region. Since thedriving transistor 6402 operates in a linear region, voltage higher thanthe voltage of the power supply line 6407 is applied to the gate of thedriving transistor 6402. Note that a voltage greater than or equal to(power supply line voltage+V_(th) of the driving transistor 6402) isapplied to the signal line 6405.

Further, in the case of using analog grayscale driving instead of thedigital time ratio grayscale driving, the pixel structure the same asthat of FIG. 16 can be employed by inputting signals in a different way.

In the case of using the analog grayscale method, a voltage greater thanor equal to forward voltage of the light-emitting element 6404+V_(th) ofthe driving transistor 6402 is applied to the gate of the drivingtransistor 6402. The forward voltage of the light-emitting element 6404indicates voltage at which a desired luminance is obtained. By inputtinga video signal to enable the driving transistor 6402 to operate in asaturation region, current can be supplied to the light-emitting element6404. In order that the driving transistor 6402 can operate in thesaturation region, the potential of the power supply line 6407 is madehigher than a gate potential of the driving transistor 6402. When ananalog video signal is used, it is possible to feed current to thelight-emitting element 6404 in accordance with the video signal andperform analog grayscale driving.

Note that the pixel structure illustrated in FIG. 16 is not limitedthereto. For example, a switch, a resistor, a capacitor, a transistor, alogic circuit, or the like may be added to the pixel shown in FIG. 16.

Next, structures of the light-emitting element will be described withreference to FIGS. 17A to 17C. Here, a cross-sectional structure of apixel will be described by taking an n-channel driving TFT as anexample. Driving TFTs 7011, 7021, and 7001 used for semiconductordevices illustrated in FIGS. 17A, 17B, and 17C can be manufactured in amanner similar to that of the thin film transistor described in any ofthe embodiments and are thin film transistors each including an oxidesemiconductor layer, as examples.

In order to extract light emission from the light-emitting element, atleast one of an anode and a cathode is required to be transparent. Athin film transistor and a light-emitting element are formed over asubstrate. The light-emitting element can have a top emission structurein which light emission is extracted through a surface opposite to thesubstrate; a bottom emission structure in which light emission isextracted through a surface on the substrate side; or a dual emissionstructure in which light emission is extracted through the surfaceopposite to the substrate and the surface on the substrate side. Thepixel structure can be applied to a light-emitting element having any ofthese emission structures.

Next, a light-emitting element having a bottom emission structure isdescribed with reference to FIG. 17A.

FIG. 17A is a cross-sectional view of a pixel of the case where adriving TFT 7011 is of an n-type and light is emitted from alight-emitting element 7012 to a first electrode 7013 side. In FIG. 17A,the first electrode 7013 of the light-emitting element 7012 is formedover a light-transmitting conductive layer 7017 which is electricallyconnected to a drain electrode layer of the driving TFT 7011, and an ELlayer 7014 and a second electrode 7015 are stacked in the orderpresented, over the first electrode 7013.

As the light-transmitting conductive layer 7017, a light-transmittingconductive layer of indium oxide including tungsten oxide, indium zincoxide including tungsten oxide, indium oxide including titanium oxide,indium tin oxide including titanium oxide, indium tin oxide, indium zincoxide, indium tin oxide to which silicon oxide is added, or the like canbe used.

A variety of materials can be used for the first electrode 7013 of thelight-emitting element. For example, in the case where the firstelectrode 7013 is used as a cathode, the first electrode 7013 ispreferably formed using, for example, a material having a low workfunction such as an alkali metal such as Li or Cs; an alkaline earthmetal such as Mg, Ca, or Sr; an alloy containing any of these metals(e.g., Mg:Ag or Al:Li); or a rare earth metal such as Yb or Er. In FIG.17A, the first electrode 7013 is approximately formed to a thicknesssuch that light is transmitted (preferably, approximately 5 nm to 30nm). For example, an aluminum layer having a thickness of 20 nm is usedfor the first electrode 7013.

Note that the light-transmitting conductive layer 7017 and the firstelectrode 7013 may be formed by stacking a light-transmitting conductivelayer and an aluminum layer and then performing selective etching. Inthis case, the etching can be performed using the same mask, which ispreferable.

Further, the periphery of the first electrode 7013 is covered with apartition wall 7019. The partition wall 7019 is formed using an organicresin film of polyimide, acrylic, polyamide, epoxy, or the like; aninorganic insulating film; or organic polysiloxane. It is particularlypreferable that the partition wall 7019 be formed using a photosensitiveresin material to have an opening over the first electrode 7013 so thata sidewall of the opening is formed to have an inclined surface withcontinuous curvature. In the case where a photosensitive resin materialis used for the partition wall 7019, a step of forming a resist mask canbe omitted.

As the EL layer 7014 formed over the first electrode 7013 and thepartition wall 7019, an EL layer including at least a light-emittinglayer is acceptable. Further, the EL layer 7014 may be formed to haveeither a single-layer structure or a stacked-layer structure. When theEL layer 7014 is formed using a plurality of layers, anelectron-injection layer, an electron-transport layer, a light-emittinglayer, a hole-transport layer, and a hole-injection layer are stacked inthe order presented over the first electrode 7013 functioning as acathode. Note that not all of these layers need to be provided exceptfor the light-emitting layer.

The stacking order is not limited to the order presented above. Thefirst electrode 7013 may serve as an anode, and a hole-injection layer,a hole-transport layer, a light-emitting layer, an electron-transportlayer, and an electron-injection layer may be stacked in the orderpresented over the first electrode 7013. However, considering powerconsumption, it is preferable that the first electrode 7013 serve as acathode and an electron-injection layer, an electron-transport layer, alight-emitting layer, a hole-transport layer, and a hole-injection layerbe stacked in the order presented over the first electrode 7013 becausean increase in voltage of a driver circuit portion can be prevented andpower consumption can be reduced more effectively than in the case ofusing the first electrode 7013 as the anode.

Further, any of a variety of materials can be used for the secondelectrode 7015 formed over the EL layer 7014. For example, in the casewhere the second electrode 7015 is used as an anode, a material having ahigh work function, for example, ZrN, Ti, W, Ni, Pt, Cr, or the like; ora transparent conductive material such as ITO, IZO, or ZnO ispreferable. Further, a shielding film 7016, for example, a metal whichblocks light, a metal which reflects light, or the like is provided overthe second electrode 7015. In this embodiment, an ITO film is used asthe second electrode 7015, and a Ti layer is used as the shielding film7016.

The light-emitting element 7012 corresponds to a region where the ELlayer 7014 including the light-emitting layer is sandwiched between thefirst electrode 7013 and the second electrode 7015. In the case of theelement structure illustrated in FIG. 17A, light emitted from thelight-emitting element 7012 is ejected to the first electrode 7013 sideas indicated by an arrow.

Note that in the example illustrated in FIG. 17A, a light-transmittingconductive layer is used as a gate electrode layer and a thinlight-transmitting film is used as source and drain electrode layers.Light emitted from the light-emitting element 7012 passes through acolor filter layer 7033, and can be ejected through the substrate.

The color filter layer 7033 is formed by a droplet discharge method suchas an inkjet method, a printing method, an etching method with the useof a photolithography technique, or the like.

The color filter layer 7033 is covered with the overcoat layer 7034, andalso covered with the protective insulating layer 7035. Note thatalthough the overcoat layer 7034 with a small thickness is illustratedin FIG. 17A, the overcoat layer 7034 has a function to planarizeroughness due to the color filter layer 7033.

A contact hole which is formed in a planarization insulating layer 7036,the insulating layer 7032, and the insulating layer 7031, and whichreaches the drain electrode layer is provided in a portion whichoverlaps with the partition wall 7019.

A light-emitting element having a dual emission structure is describedwith reference to FIG. 17B.

In FIG. 17B, a first electrode 7023 of a light-emitting element 7022 isformed over a light-transmitting conductive layer 7027 which iselectrically connected to a drain electrode layer of the driving TFT7021, and an EL layer 7024 and a second electrode 7025 are stacked inthe order presented over the first electrode 7023.

As the light-transmitting conductive layer 7027, a light-transmittingconductive layer of indium oxide including tungsten oxide, indium zincoxide including tungsten oxide, indium oxide including titanium oxide,indium tin oxide including titanium oxide, indium tin oxide, indium zincoxide, indium tin oxide to which silicon oxide is added, or the like canbe used.

A variety of materials can be used for the first electrode 7023. Forexample, in the case where the first electrode 7023 is used as acathode, the first electrode 7023 is preferably formed using, forexample, a material having a low work function such as an alkali metalsuch as Li or Cs; an alkaline earth metal such as Mg, Ca, or Sr; analloy containing any of these metals (e.g., Mg:Ag or Al:Li); or a rareearth metal such as Yb or Er. In this embodiment, the first electrode7023 is used as a cathode, and the first electrode 7023 is approximatelyformed to a thickness such that light is transmitted (preferably,approximately 5 nm to 30 nm). For example, an aluminum layer having athickness of 20 nm is used as the cathode.

Note that the light-transmitting conductive layer 7027 and the firstelectrode 7023 may be formed by stacking the light-transmittingconductive layer and the aluminum layer and then performing selectiveetching. In this case, the etching can be performed using the same mask,which is preferable.

Further, the periphery of the first electrode 7023 is covered with apartition wall 7029. The partition wall 7029 is formed using an organicresin film of polyimide, acrylic, polyamide, epoxy, or the like; aninorganic insulating film; or organic polysiloxane. It is particularlypreferable that the partition wall 7029 be formed using a photosensitiveresin material to have an opening over the first electrode 7023 so thata sidewall of the opening is formed to have an inclined surface withcontinuous curvature. In the case where a photosensitive resin materialis used for the partition wall 7029, a step of forming a resist mask canbe omitted.

As the EL layer 7024 formed over the first electrode 7023 and thepartition wall 7029, an EL layer including a light-emitting layer isacceptable. Further, the EL layer 7024 may be formed to have either asingle-layer structure or a stacked-layer structure. When the EL layer7024 is formed using a plurality of layers, an electron-injection layer,an electron-transport layer, a light-emitting layer, a hole-transportlayer, and a hole-injection layer are stacked in the order presentedover the first electrode 7023 functioning as a cathode. Note that notall of these layers need to be provided except for the light-emittinglayer.

The stacking order is not limited to the order presented above. Thefirst electrode 7023 may serve as an anode and a hole-injection layer, ahole-transport layer, a light-emitting layer, an electron-transportlayer, and an electron-injection layer may be stacked in the orderpresented over the first electrode 7023. However, considering powerconsumption, it is preferable that the first electrode 7023 is used as acathode and an electron-injection layer, an electron-transport layer, alight-emitting layer, a hole-transport layer, and a hole-injection layerbe stacked in the order presented over the cathode because powerconsumption can be reduced more effectively than in the case of usingthe first electrode 7023 as the anode.

Further, a variety of materials can be used for the second electrode7025 formed over the EL layer 7024. For example, in the case where thesecond electrode 7025 is used as an anode, a material having a high workfunction, for example, a transparent conductive material such as ITO,IZO, or ZnO is preferable. In this embodiment, the second electrode 7025is formed using an ITO layer including silicon oxide and is used as ananode.

The light-emitting element 7022 corresponds to a region where the ELlayer 7024 including the light-emitting layer is sandwiched between thefirst electrode 7023 and the second electrode 7025. In the case of theelement structure illustrated in FIG. 17B, light emitted from thelight-emitting element 7022 is ejected to both the second electrode 7025side and the first electrode 7023 side as indicated by arrows.

Note that in the example illustrated in FIG. 17B, a light-transmittingconductive layer is used as a gate electrode layer and a thinlight-transmitting film is used as source and drain electrode layers.Light emitted from the light-emitting element 7022 to the firstelectrode 7023 side passes through a color filter layer 7043, and can beejected through the substrate.

The color filter layer 7043 is formed by a droplet discharge method suchas an inkjet method, a printing method, an etching method with the useof a photolithography technique, or the like.

The color filter layer 7043 is covered with the overcoat layer 7044, andalso covered with the protective insulating layer 7045.

A contact hole which is formed in a planarization insulating layer 7046,the insulating layer 7042, and the insulating layer 7041, and whichreaches the drain electrode layer is provided in a portion whichoverlaps with the partition wall 7029.

Note that in the case where full-color display is realized on bothdisplay surfaces by using a light-emitting element having a dualemission structure, light emitted from the second electrode 7025 sidedoes not pass through the color filter layer 7043; therefore, it ispreferable that a sealing substrate having a color filter layer befurther provided over the second electrode 7025.

Next, a light-emitting element having a top emission structure isdescribed with reference to FIG. 17C.

FIG. 17C is a cross-sectional view of a pixel of the case where adriving TFT 7001 is of an n-type and light emitted from a light-emittingelement 7002 passes through a second electrode 7005. In FIG. 17C, adrain electrode layer of the driving TFT 7001 and a first electrode 7003are in contact with each other, and the driving TFT 7001 and the firstelectrode 7003 of the light-emitting element 7002 are electricallyconnected to each other. An EL layer 7004 and the second electrode 7005are stacked over the first electrode 7003 in the order presented.

Further, a variety of materials can be used for the first electrode7003. For example, in the case where the first electrode 7003 is used asa cathode, the first electrode 7003 is preferably formed using amaterial having a low work function such as an alkali metal such as Lior Cs; an alkaline earth metal such as Mg, Ca, or Sr; an alloycontaining any of these metals (e.g., Mg:Ag or Al:Li); or a rare earthmetal such as Yb or Er.

Further, the periphery of the first electrode 7003 is covered with apartition wall 7009. The partition wall 7009 is formed using an organicresin film of polyimide, acrylic, polyamide, epoxy, or the like; aninorganic insulating film; or organic polysiloxane. It is particularlypreferable that the partition wall 7009 be formed using a photosensitiveresin material to have an opening over the first electrode 7003 so thata sidewall of the opening is formed to have an inclined surface withcontinuous curvature. In the case where a photosensitive resin materialis used for the partition wall 7009, a step of forming a resist mask canbe omitted.

As the EL layer 7004 formed over the first electrode 7003 and thepartition wall 7009, an EL layer including at least a light-emittinglayer is acceptable. Further, the EL layer 7004 may be formed to haveeither a single-layer structure or a stacked-layer structure. When theEL layer 7004 is formed using a plurality of layers, anelectron-injection layer, an electron-transport layer, a light-emittinglayer, a hole-transport layer, and a hole-injection layer are stacked inthe order presented over the first electrode 7003 used as a cathode.Note that not all of these layers need to be provided except for thelight-emitting layer.

The stacking order is not limited to the order presented above, and ahole-injection layer, a hole-transport layer, a light-emitting layer, anelectron-transport layer, and an electron-injection layer may be stackedin the order presented over the first electrode 7003 used as an anode.

In FIG. 17C, a hole-injection layer, a hole-transport layer, alight-emitting layer, an electron-transport layer, and anelectron-injection layer are stacked in the order presented over astacked-layer film in which a Ti layer, an aluminum layer, and a Tilayer are stacked in the order presented, and thereover, a stacked layerof a thin Mg:Ag alloy film and ITO is formed.

However, in the case where the driving TFT 7001 is of an n-type, it ispreferable that an electron-injection layer, an electron-transportlayer, a light-emitting layer, a hole-transport layer, and ahole-injection layer be stacked in the order presented over the firstelectrode 7003 because an increase in voltage of a driver circuit can beprevented and power consumption can be reduced more effectively than inthe case of using the layers stacked in the above order.

The second electrode 7005 is formed using a light-transmittingconductive material. For example, a light-transmitting conductive layerof indium oxide including tungsten oxide, indium zinc oxide includingtungsten oxide, indium oxide including titanium oxide, indium tin oxideincluding titanium oxide, indium tin oxide, indium zinc oxide, or indiumtin oxide to which silicon oxide is added, or the like can be used.

The light-emitting element 7002 corresponds to a region where the ELlayer 7004 including the light-emitting layer is sandwiched between thefirst electrode 7003 and the second electrode 7005. In the case of thepixel illustrated in FIG. 17C, light emitted from the light-emittingelement 7002 is ejected to the second electrode 7005 side as indicatedby an arrow.

In FIG. 17C, the drain electrode layer of the driving TFT 7001 iselectrically connected to the first electrode 7003 through a contacthole formed in a silicon oxide layer 7051, a protective insulating layer7052, a planarization insulating layer 7056, a planarization insulatinglayer 7053, and an insulating layer 7055. The planarization insulatinglayers 7036, 7046, 7053, and 7056 can be formed using a resin materialsuch as polyimide, acrylic, benzocyclobutene, polyamide, or epoxy. Otherthan such resin materials, it is also possible to use a low-dielectricconstant material (low-k material), a siloxane-based resin,phosphosilicate glass (PSG), borophosphosilicate glass (BPSG), or thelike. Note that the planarization insulating layers 7036, 7046, 7053,and 7056 may be formed by stacking a plurality of insulating layersformed using these materials. The planarization insulating layers 7036,7046, 7053, and 7056 can be formed, depending on the material, with amethod such as a sputtering method, an SOG method, a spin coatingmethod, a dipping method, a spray coating method, or a droplet dischargemethod (e.g., an inkjet method, screen printing, or offset printing), ora tool (equipment) such as a doctor knife, a roll coater, a curtaincoater, or a knife coater.

The partition wall 7009 is provided in order to insulate the firstelectrode 7003 from a first electrode of an adjacent pixel. Thepartition wall 7009 is formed using an organic resin film of polyimide,acrylic, polyamide, epoxy, or the like; an inorganic insulating film; ororganic polysiloxane. It is particularly preferable that the partitionwall 7009 be formed using a photosensitive resin material to have anopening over the first electrode 7003 so that a sidewall of the openingis formed as an inclined surface with continuous curvature. In the casewhere a photosensitive resin material is used for the partition wall7009, a step of forming a resist mask can be omitted.

In the structure illustrated in FIG. 17C, for performing full-colordisplay, the light-emitting element 7002, one of adjacent light-emittingelements, and the other of the adjacent light-emitting elements are, forexample, a green emissive light-emitting element, a red emissivelight-emitting element, and a blue emissive light-emitting element,respectively. Alternatively, a light-emitting display device capable offull color display may be manufactured using four kinds oflight-emitting elements which include a white light-emitting element inaddition to three kinds of light-emitting elements.

In the structure of FIG. 17C, a light-emitting display device capable offull color display may be manufactured in such a way that all of aplurality of light-emitting elements which is arranged is whitelight-emitting elements and a sealing substrate having a color filter orthe like is arranged over the light-emitting element 7002. A materialwhich exhibits a single color such as white is formed and combined witha color filter or a color conversion layer, whereby full color displaycan be performed.

Any of the thin film transistors of the embodiments can be used asappropriate as the driving TFTs 7001, 7011, and 7021 used forsemiconductor devices, and they can be formed using steps and materialssimilar to those for the TFTs of the embodiments. Hydrogen or water isreduced in the oxide semiconductor layers of the driving TFTs 7001,7011, and 7021. Thus, the driving TFTs 7001, 7011, and 7021 are highlyreliable thin film transistors.

Needless to say, display of monochromatic light can also be performed.For example, a lighting system may be formed with the use of white lightemission, or an area-color light-emitting device may be formed with theuse of a single color light emission.

If necessary, an optical film such as a polarizing film including acircularly polarizing plate may be provided.

Note that, although the organic EL elements are described here as thelight-emitting elements, an inorganic EL element can also be provided asa light-emitting element.

Note that the example is described in which a thin film transistor (adriving TFT) which controls the driving of a light-emitting element iselectrically connected to the light-emitting element; however, astructure may be employed in which a TFT for current control isconnected between the driving TFT and the light-emitting element.

FIGS. 18A and 18B illustrate an appearance and a cross section of alight-emitting display panel (also referred to as a light-emittingpanel). FIG. 18A is a plan view of a panel in which a thin filmtransistor and a light-emitting element that are formed over a firstsubstrate are sealed between the first substrate and a second substratewith a sealant. FIG. 18B is a cross-sectional view taken along a lineH-I in FIG. 18A.

A sealant 4505 is provided to surround a pixel portion 4502, signal linedriver circuits 4503 a and 4503 b, and scan line driver circuits 4504 aand 4504 b which are provided over a first substrate 4501. In addition,a second substrate 4506 is provided over the pixel portion 4502, thesignal line driver circuits 4503 a and 4503 b, and the scan line drivercircuits 4504 a and 4504 b. Accordingly, the pixel portion 4502, thesignal line driver circuits 4503 a and 4503 b, and the scan line drivercircuits 4504 a and 4504 b are sealed together with a filler 4507, bythe first substrate 4501, the sealant 4505, and the second substrate4506. It is preferable that a panel be packaged (sealed) with aprotective film (such as a laminate film or an ultraviolet curable resinfilm) or a cover material with high air-tightness and littledegasification so that the panel is not exposed to the outside air, inthis manner.

The pixel portion 4502, the signal line driver circuits 4503 a and 4503b, and the scan line driver circuits 4504 a and 4504 b, which are formedover the first substrate 4501, each include a plurality of thin filmtransistors. A thin film transistor 4510 included in the pixel portion4502 and a thin film transistor 4509 included in the signal line drivercircuit 4503 a are illustrated as an example in FIG. 18B.

Any of the thin film transistors of the embodiments can be used asappropriate as the thin film transistors 4509 and 4510, and they can beformed using steps and materials similar to those for the thin filmtransistors of the embodiments. Hydrogen or water is reduced in theoxide semiconductor layers of the thin film transistors 4509 and 4510.Thus, the thin film transistors 4509 and 4510 are highly reliable thinfilm transistors.

A conductive layer is provided over a portion overlapping with thechannel formation region of the oxide semiconductor layer in the thinfilm transistor 4509. In this embodiment, the thin film transistors 4509and 4510 are n-channel thin film transistors.

The conductive layer 4540 is provided over part of an oxide siliconlayer 4542, which overlaps with the channel formation region of theoxide semiconductor layer in the thin film transistor 4509. Theconductive layer 4540 is provided at the position overlapping with thechannel formation region of the oxide semiconductor layer, whereby theamount of change in threshold voltage of the thin film transistor 4509before and after the BT test can be reduced. A potential of theconductive layer 4540 may be the same or different from that of a gateelectrode layer in the thin film transistor 4509. The conductive layer4540 can also function as a second gate electrode layer. Alternatively,the potential of the conductive layer 4540 may be GND, 0 V, or theconductive layer 4540 may be in a floating state.

Further, the silicon oxide layer 4542 is formed to cover the oxidesemiconductor layer of the thin film transistor 4510. The source ordrain electrode layer of the thin film transistor 4510 is electricallyconnected to a wiring layer 4550 in an opening formed in the siliconoxide layer 4542 and an insulating layer 4551 which are formed over thethin film transistor. The wiring layer 4550 is formed in contact with afirst electrode 4517, and the thin film transistor 4510 is electricallyconnected to the first electrode 4517 through the wiring layer 4550.

A color filter layer 4545 is formed over the insulating layer 4551 so asto overlap with a light-emitting region of a light-emitting element4511.

Further, in order to reduce the surface roughness of the color filterlayer 4545, the color filter layer 4545 is covered with an overcoatlayer 4543 functioning as a planarization insulating film.

An insulating layer 4544 is formed over the overcoat layer 4543. As theinsulating layer 4544, a silicon nitride layer may be formed by asputtering method, for example.

Reference numeral 4511 denotes a light-emitting element. The firstelectrode 4517 which is a pixel electrode included in the light-emittingelement 4511 is electrically connected to a source electrode layer or adrain electrode layer of the thin film transistor 4510, through thewiring layer 4550. Note that the light-emitting element 4511 has astacked-layer structure of the first electrode 4517, anelectroluminescent layer 4512, and a second electrode 4513, and there isno particular limitation on the structure. The structure of thelight-emitting element 4511 can be changed as appropriate depending onthe direction in which light is extracted from the light-emittingelement 4511, or the like.

A partition wall 4520 is formed using an organic resin film, aninorganic insulating film, or organic polysiloxane. It is particularlypreferable that the partition wall 4520 be formed using a photosensitivematerial to have an opening portion over the first electrode 4517 sothat a sidewall of the opening portion is formed as a tilted surfacewith continuous curvature.

The electroluminescent layer 4512 may be formed to have either asingle-layer structure or a stacked-layer structure.

In order to prevent entry of oxygen, hydrogen, moisture, carbon dioxide,or the like into the light-emitting element 4511, a protective layer maybe formed over the second electrode 4513 and the partition wall 4520. Asthe protective layer, a silicon nitride layer, a silicon nitride oxidelayer, a DLC layer, or the like can be formed.

In addition, a variety of signals and potentials are supplied to thesignal line driver circuits 4503 a and 4503 b, the scan line drivercircuits 4504 a and 4504 b, or the pixel portion 4502 from FPCs 4518 aand 4518 b.

A connection terminal electrode 4515 is formed using the same conductivelayer as the first electrode 4517 included in the light-emitting element4511, and a terminal electrode 4516 is formed using the same conductivelayer as the source and drain electrode layers included in the thin filmtransistor 4509.

The connection terminal electrode 4515 is electrically connected to aterminal included in the FPC 4518 a through an anisotropic conductivelayer 4519.

The second substrate located in the direction in which light isextracted from the light-emitting element 4511 should have alight-transmitting property. In that case, a light-transmitting materialsuch as a glass plate, a plastic plate, a polyester film, or an acrylicfilm is used for the second substrate 4506.

As the filler 4507, an ultraviolet curable resin or a thermosettingresin can be used, as well as an inert gas such as nitrogen or argon.For example, PVC (polyvinyl chloride), acrylic, polyimide, an epoxyresin, a silicone resin, PVB (polyvinyl butyral), or EVA (ethylene vinylacetate) can be used. For example, nitrogen is used for the filler.

In addition, if needed, an optical film, such as a polarizing plate, acircularly polarizing plate (including an elliptically polarizingplate), or a retardation plate (a quarter-wave plate or a half-waveplate) may be provided as appropriate on a light-emitting surface of thelight-emitting element. Further, the polarizing plate or the circularlypolarizing plate may be provided with an anti-reflection film. Forexample, anti-glare treatment by which reflected light can be diffusedby projections and depressions on the surface to reduce the glare can beperformed.

The sealant can be formed using a screen printing method, an inkjetapparatus, or a dispensing apparatus. As the sealant, typically, amaterial containing a visible light curable resin, an ultravioletcurable resin, or a thermosetting resin can be used. Further, a fillermay be contained.

As the signal line driver circuits 4503 a and 4503 b and the scan linedriver circuits 4504 a and 4504 b, driver circuits formed using a singlecrystal semiconductor film or a polycrystalline semiconductor film overa substrate separately prepared may be used and mounted. Alternatively,only the signal line driver circuits or a part thereof, or only the scanline driver circuits or a part thereof may be separately formed andmounted. This embodiment is not limited to the structure illustrated inFIGS. 18A and 18B.

Through the above process, a highly reliable light-emitting displaydevice (display panel) as a semiconductor device can be manufactured.

This embodiment can be implemented in appropriate combination with anyof the other embodiments.

Embodiment 13

In this embodiment, an example of a semiconductor device including thelogic circuit in Embodiment 1 or Embodiment 2 is described.Specifically, an example of electronic paper in which a driver circuitincludes the logic circuit in Embodiment 1 or Embodiment 2 is described.

FIG. 19 is a cross-sectional view illustrating active matrix electronicpaper. Any of the thin film transistors of the embodiments can be usedas appropriate as a thin film transistor 581 used for electronic paper,and it can be formed using steps and materials similar to those for thethin film transistors of the embodiments. In this embodiment, the thinfilm transistor described in Embodiment 6 is used as the thin filmtransistor 581, for example. Hydrogen or water is reduced in the oxidesemiconductor layer of the thin film transistor 581. Thus, the thin filmtransistor 581 is a highly reliable thin film transistor.

The electronic paper in FIG. 19 is an example of a display device usinga twisting ball display system. The twisting ball display system refersto a system in which spherical particles each colored in black and whiteare arranged between a first electrode layer and a second electrodelayer which are electrode layers used for a display element, and apotential difference is generated between the first electrode layer andthe second electrode layer to control orientation of the sphericalparticles, so that display is performed.

The thin film transistor 581 formed over a substrate 580 has abottom-gate structure in which source and drain electrode layers areelectrically connected to a first electrode layer 587 through an openingformed in a silicon oxide layer 583, a protective insulating layer 584and an insulating layer 585.

Between the first electrode layer 587 and the second electrode layer588, spherical particles are provided. Each spherical particle includesa black region 590 a and a white region 590 b, and a cavity 594 filledwith liquid around the black region 590 a and the white region 590 b.The circumference of the spherical particle is filled with a filler 595such as a resin (see FIG. 19). In this embodiment, the first electrodelayer 587 corresponds to a pixel electrode and the second electrodelayer 588 provided on a counter substrate 596 corresponds to a commonelectrode.

Further, instead of the twisting ball, an electrophoretic element canalso be used. A microcapsule having a diameter of about 10 μm to 200 μmin which transparent liquid, positively or negatively charged whitemicroparticles, and black microparticles charged with the polarityopposite to that of the white microparticles are encapsulated, is used.In the microcapsule provided between the first electrode layer and thesecond electrode layer, when an electric field is applied by the firstelectrode layer and the second electrode layer, the white microparticlesand the black microparticles move in opposite directions to each other,so that white or black can be displayed. A display element using thisprinciple is an electrophoretic display element, and is calledelectronic paper in general. The electrophoretic display element hashigher reflectance than a liquid crystal display element, and thus, anauxiliary light is unnecessary, power consumption is low, and a displayportion can be recognized in a dim place. In addition, even when poweris not supplied to the display portion, an image which has beendisplayed once can be maintained. Accordingly, a displayed image can bestored even if a semiconductor device having a display function (whichmay be referred to simply as a display device or a semiconductor deviceprovided with a display device) is distanced from an electric wavesource.

The electronic paper of this embodiment is a reflective display device,in which display is performed by controlling voltage applied to thetwisting ball with a driver circuit.

This embodiment can be implemented in appropriate combination with anyof the other embodiments.

Embodiment 14

In this embodiment, examples of semiconductor devices each including thelogic circuit in Embodiment 1 or Embodiment 2 are described.Specifically, examples of electronic devices (including an amusementmachine in its category) in which a driver circuit includes the logiccircuit in Embodiment 1 or Embodiment 2 are described. Examples ofelectronic devices include a television set (also referred to as atelevision or a television receiver), a monitor of a computer or thelike, a digital camera, a digital video camera, a digital photo frame, amobile phone (also referred to as a mobile phone device), a portablegame machine, a portable information terminal, an audio reproducingdevice, a large game machine such as a pinball machine, and the like.

FIG. 20A illustrates an example of a mobile phone. A mobile phone 1600is provided with a display portion 1602 incorporated in a housing 1601,operation buttons 1603 a and 1603 b, an external connection port 1604, aspeaker 1605, a microphone 1606, and the like.

When the display portion 1602 of the mobile phone 1600 illustrated inFIG. 20A is touched with a finger or the like, data can be input intothe mobile phone 1600. Further, operations such as making a call andcomposing a mail can be performed by touching the display portion 1602with a finger or the like.

There are mainly three screen modes of the display portion 1602. Thefirst mode is a display mode mainly for displaying an image. The secondmode is an input mode mainly for inputting data such as text. The thirdmode is a display-and-input mode in which two modes of the display modeand the input mode are combined.

For example, in the case of making a call or composing a mail, a textinput mode mainly for inputting text is selected for the display portion1602 so that text displayed on a screen can be input. In this case, itis preferable to display a keyboard or number buttons on almost all areaof the screen of the display portion 1602.

When a detection device including a sensor for detecting inclination,such as a gyroscope or an acceleration sensor, is provided inside themobile phone 1600, display of the screen on the display portion 1602 canbe automatically switched by determining the direction of the mobilephone 1600 (whether the mobile phone 1600 is placed horizontally orvertically for a landscape mode or a portrait mode).

The screen modes are switched by touching the display portion 1602 oroperating the operation buttons 1603 a and 1603 b of the housing 1601.Alternatively, the screen modes may be switched depending on the kind ofthe image displayed on the display portion 1602. For example, when asignal for an image displayed in the display portion is data of movingimages, the screen mode is switched to the display mode. When the signalis text data, the screen mode is switched to the input mode.

Further, in the input mode, when input by touching the display portion1602 is not performed for a certain period while a signal detected bythe optical sensor in the display portion 1602 is detected, the screenmode may be controlled so as to be switched from the input mode to thedisplay mode.

The display portion 1602 may function as an image sensor. For example,an image of the palm print, the fingerprint, or the like is taken bytouching the display portion 1602 with the palm or the finger, wherebypersonal authentication can be performed. Further, by providing abacklight or sensing light source emitting a near-infrared light for thedisplay portion, an image of a finger vein, a palm vein, or the like canbe taken.

Any of the semiconductor devices described in the embodiments can beapplied to the display portion 1602. For example, a plurality of thinfilm transistors described in the embodiments can be disposed asswitching elements in pixels.

FIG. 20B also illustrates an example of a mobile phone. A portableinformation terminal whose example is illustrated in FIG. 20B can have aplurality of functions. For example, in addition to a telephonefunction, such a portable information terminal can have a function ofprocessing a variety of pieces of data by incorporating a computer.

The portable information terminal illustrated in FIG. 20B has a housing1800 and a housing 1801. The housing 1801 includes a display panel 1802,a speaker 1803, a microphone 1804, a pointing device 1806, a camera lens1807, an external connection terminal 1808, and the like. The housing1800 includes a keyboard 1810, an external memory slot 1811, and thelike. In addition, an antenna is incorporated in the housing 1801.

The display panel 1802 is provided with a touch panel. A plurality ofoperation keys 1805 displayed as images is indicated by dashed lines inFIG. 20B.

Further, in addition to the above structure, a contactless IC chip, asmall memory device, or the like may be incorporated.

In the display panel 1802, the direction of display is changedappropriately depending on an application mode. Further, the portableinformation terminal is provided with the camera lens 1807 on the samesurface as the display panel 1802, and thus it can be used as a videophone. The speaker 1803 and the microphone 1804 can be used forvideophone calls, recording, playing sound, etc. as well as voice calls.Moreover, the housings 1800 and 1801 in a state where they are developedas illustrated in FIG. 20B can be slid so that one is lapped over theother; therefore, the size of the portable information terminal can bereduced, which makes the portable information terminal suitable forbeing carried.

The external connection terminal 1808 can be connected to an AC adapterand various types of cables such as a USB cable, and charging and datacommunication with a personal computer are possible. Moreover, a storagemedium can be inserted into the external memory slot 1811 so that alarge amount of data can be stored and can be moved.

Further, in addition to the above functions, an infrared communicationfunction, a television reception function, or the like may be provided.

FIG. 21A illustrates an example of a television set. In a television set9600, a display portion 9603 is incorporated in a housing 9601. Thedisplay portion 9603 can display images. Here, the housing 9601 issupported by a stand 9605.

The television set 9600 can be operated with an operation switch of thehousing 9601 or a separate remote controller 9610. Channels can beswitched and volume can be controlled with operation keys 9609 of theremote controller 9610, whereby an image displayed on the displayportion 9603 can be controlled. Moreover, the remote controller 9610 maybe provided with a display portion 9607 for displaying data outputtedfrom the remote controller 9610.

Note that the television set 9600 is provided with a receiver, a modem,and the like. With the use of the receiver, general TV broadcasts can bereceived. Moreover, when the display device is connected to acommunication network with or without wires via the modem, one-way (froma sender to a receiver) or two-way (between a sender and a receiver orbetween receivers) information communication can be performed.

In the display portion 9603, the plurality of thin film transistorsdescribed in any of the embodiments can be provided as switchingelements of pixels.

FIG. 21B illustrates an example of a digital photo frame. For example,in a digital photo frame 9700, a display portion 9703 is incorporated ina housing 9701. The display portion 9703 can display a variety ofimages. For example, the display portion 9703 can display data of animage taken with a digital camera or the like and function as a normalphoto frame.

In the display portion 9703, the plurality of thin film transistorsdescribed in any of the embodiments can be provided as switchingelements of pixels.

Note that the digital photo frame 9700 is provided with an operationportion, an external connection terminal (a USB terminal, a terminalconnectable to a variety of cables such as a USB cable, or the like), arecording medium insertion portion, and the like. Although thesecomponents may be provided on the same surface as the display portion,it is preferable to provide them on the side surface or the back surfacefor design aesthetics. For example, a memory storing data of an imagetaken with a digital camera is inserted in the recording mediuminsertion portion of the digital photo frame and the data is loaded,whereby the image can be displayed on the display portion 9703.

The digital photo frame 9700 may be configured to transmit and receivedata wirelessly. Through wireless communication, desired image data canbe loaded to be displayed.

FIG. 22 is a portable game machine and is constituted by two housings ofa housing 9881 and a housing 9891 which are connected with a jointportion 9893 so that the portable game machine can be opened or folded.A display portion 9882 and a display portion 9883 are incorporated inthe housing 9881 and the housing 9891, respectively.

In the display portion 9883, the plurality of thin film transistorsdescribed in any of the embodiments can be provided as switchingelements of pixels.

In addition, the portable game machine illustrated in FIG. 22 isprovided with a speaker portion 9884, a recording medium insertionportion 9886, an LED lamp 9890, input means (operation keys 9885, aconnection terminal 9887, a sensor 9888 (having a function of measuringforce, displacement, position, speed, acceleration, angular velocity,rotation number, distance, light, liquid, magnetism, temperature,chemical substance, sound, time, hardness, electric field, current,voltage, electric power, radial ray, flow rate, humidity, gradient,vibration, smell, or infrared ray), and a microphone 9889), and thelike. Needless to say, the structure of the portable game machine is notlimited to the above and other structures provided with at least thethin film transistor disclosed in this specification can be employed.The portable game machine may include an additional accessory asappropriate. The portable game machine illustrated in FIG. 22 has afunction of reading a program or data stored in the recording medium todisplay it on the display portion, and a function of sharing data withanother portable game machine by wireless communication. Note that afunction of the portable game machine illustrated in FIG. 22 is notlimited to these, and the portable game machine can have a variety offunctions.

As described above, the logic circuit in Embodiment 1 or Embodiment 2can be applied to display panels of various electronic devices and thus,electronic devices having high reliability can be provided.

Embodiment 15

In this embodiment, an example of a semiconductor device including thelogic circuit in Embodiment 1 or Embodiment 2 is described.Specifically, an electronic paper in which a driver circuit includes thelogic circuit in Embodiment 1 or Embodiment 2 can be used in electronicdevices in all fields as long as they display information. For example,electronic paper can be applied to an e-book reader (an electronicbook), a poster, an advertisement in a vehicle such as a train, ordisplays of various cards such as a credit card. An example of suchelectronic devices is illustrated in FIG. 23.

FIG. 23 illustrates an example of an e-book reader. For example, ane-book reader 2700 includes two housings of a housing 2701 and a housing2703. The housing 2701 and the housing 2703 are combined with a hinge2711 so that the e-book reader 2700 can be opened and closed with thehinge 2711 as an axis. Such a structure enables the e-book reader 2700to operate like a paper book.

A display portion 2705 and a display portion 2707 are incorporated inthe housing 2701 and the housing 2703, respectively. The display portion2705 and the display portion 2707 may display one image or differentimages. In the case where the display portion 2705 and the displayportion 2707 display different images, for example, a display portion onthe right side (the display portion 2705 in FIG. 23) can display textand a display portion on the left side (the display portion 2707 in FIG.23) can display graphics.

FIG. 23 illustrates an example in which the housing 2701 is providedwith an operation portion and the like. For example, the housing 2701 isprovided with a power switch 2721, an operation key 2723, a speaker2725, and the like. With the operation key 2723, pages can be turned.Note that a keyboard, a pointing device, or the like may also beprovided on the surface of the housing, on which the display portion isprovided. Furthermore, an external connection terminal (an earphoneterminal, a USB terminal, a terminal that can be connected to variouscables such as an AC adapter and a USB cable, or the like), a recordingmedium insertion portion, and the like may be provided on the backsurface or the side surface of the housing. Moreover, the e-book reader2700 may have a function of an electronic dictionary.

The e-book reader 2700 may have a configuration capable of wirelesslytransmitting and receiving data. Through wireless communication, desiredbook data or the like can be purchased and downloaded from an electronicbook server.

This embodiment can be implemented in appropriate combination with anyof the other embodiments.

Embodiment 16

In accordance with an embodiment of the present invention, impurities tobe suppliers of carriers (donors or acceptors) in an oxide semiconductorare reduced to a very low level, whereby an intrinsic or substantiallyintrinsic oxide semiconductor is formed, and the oxide semiconductor isused for a thin film transistor.

FIG. 24 is a band structure of a portion between a source and a drain ofsuch a transistor. For a highly purified oxide semiconductor, the Fermilevel is located in the middle of the forbidden band under an idealcondition.

In this case, at a junction surface, the Fermi level of metal for anelectrode is the same as the level of the conduction band of an oxidesemiconductor if the equation ϕ_(m)=χ is satisfied, where ϕ_(m) is awork function and χ is an electron affinity of the oxide semiconductor.When the right side of the equation is greater than the left side, anohmic contact is provided. It is assumed that an oxide semiconductor hasa band gap of 3.15 eV and an electron affinity of 4.3 eV and is in anintrinsic state (the carrier density: approximately 1×10⁻⁷/cm³), and asource electrode and a drain electrode are formed using titanium (Ti)having a work function of 4.3 eV. Under these conditions, a Shottkybarrier with respect to electrons is not formed as illustrated in FIG.24.

FIG. 25 illustrates a state where positive voltage is applied to thedrain side in a transistor formed using an oxide semiconductor. Sincethe band gap of an oxide semiconductor is wide, the intrinsic carrierdensity of a highly purified oxide semiconductor which is intrinsic orsubstantially intrinsic is zero or as close as zero. However, whenvoltage is applied between a source and a drain, carriers (electrons)might be injected from the source side and flow into the drain side.

FIG. 26A is an energy band diagram of a MOS transistor formed using anoxide semiconductor, to which a positive gate voltage is applied. Inthis case, almost no thermally excited carriers exist in a highlypurified oxide semiconductor. Thus, carriers are not accumulated even inthe vicinity of a gate insulating film. However, as illustrated in FIG.25, transmission of carriers (electrons) injected from the source sideis possible.

FIG. 26B is an energy band diagram of a MOS transistor formed using anoxide semiconductor, to which a negative gate voltage is applied. Thereare almost no minority carriers (holes) in an oxide semiconductor;therefore, carriers are not accumulated even in the vicinity of a gateinsulating film. This means that off-state current is small.

FIG. 27 is a band diagram of a transistor formed using a siliconsemiconductor. For a silicon semiconductor, the band gap is 1.12 eV andthe intrinsic carrier density is 1.45×10¹⁰/cm³ (300 K). The thermallyexcited carriers are not negligible even at room temperatures. Thus,off-state current is greatly varied depending on a temperature.

In such a manner, not only by simply using an oxide semiconductor with awide band gap for a transistor, but also by reducing impurities to bedonors, such as hydrogen, and thus setting the carrier density to1×10¹⁴/cm³ or less, preferably 1×10¹²/cm³ or less, thermally excitedcarriers at practical operation temperatures can be removed, so that atransistor can be operated by only carriers injected from the sourceside. Accordingly, it is possible to obtain a transistor whose off-statecurrent is reduced to 1×10⁻¹³ [A] or less and is hardly changed due totemperature change, whereby the transistor can be operated in anextremely stable manner.

Embodiment 17

In this embodiment, measured values of off-state current using a testelement group (also referred to as a TEG) will be described below.

FIG. 28 shows initial characteristics of a thin film transistor witheffectively L/W=3 μm/10000 μm, in which 200 thin film transistors eachwith L/W=3 μm/50 μm are connected in parallel. In addition, a top viewis shown in FIG. 29A and a partially enlarged top view thereof is showin FIG. 29B. The region enclosed by a dotted line in FIG. 29B is a thinfilm transistor of one stage with L/W=3 μm/50 μm and Lov=1.5 μm. Inorder to measure initial characteristics of the thin film transistor,the transfer characteristics of the source-drain current (hereinafterreferred to as a drain current or Id), i.e., Vg-Id characteristics, weremeasured, under the conditions where the substrate temperature was setto room temperature, the voltage between source and drain (hereinafter,a drain voltage or Vd) was set to 10 V, and the voltage between sourceand gate (hereinafter, a gate voltage or Vg) was changed from −20 V to+20 V. Note that FIG. 28 shows Vg in the range of from −20 V to +5 V.

As shown in FIG. 28, the thin film transistor having a channel width Wof 10000 μm has an off-state current of 1×10⁻¹³ A or less at Vd of 1 Vand 10 V, which is less than or equal to the resolution (100 fA) of ameasurement device (a semiconductor parameter analyzer, Agilent 4156Cmanufactured by Agilent Technologies Inc.).

A method for manufacturing the thin film transistor used for themeasurement is described.

First, a silicon nitride layer was formed as a base layer over a glasssubstrate by a CVD method, and a silicon oxynitride layer was formedover the silicon nitride layer. A tungsten layer was formed as a gateelectrode layer over the silicon oxynitride layer by a sputteringmethod. Here, the gate electrode layer was formed by selectively etchingthe tungsten layer.

Then, a silicon oxynitride layer having a thickness of 100 nm was formedas a gate insulating layer over the gate electrode layer by a CVDmethod.

Then, an oxide semiconductor layer having a thickness of 50 nm wasformed over the gate insulating layer by a sputtering method using anIn—Ga—Zn—O-based metal oxide target (at a molar ratio ofIn₂O₃:Ga₂O₃:ZnO=1:1:2). Here, an island-shaped oxide semiconductor layerwas formed by selectively etching the oxide semiconductor layer.

Then, first heat treatment was performed on the oxide semiconductorlayer in a nitrogen atmosphere in a clean oven at 450° C. for 1 hour.

Then, a titanium layer (having a thickness of 150 nm) was formed as asource electrode layer and a drain electrode layer over the oxidesemiconductor layer by a sputtering method. Here, the source electrodelayer and the drain electrode layer were formed by selective etchingsuch that 200 thin film transistors each having a channel length L of 3μm and a channel width W of 50 μm were connected in parallel to obtain athin film transistor effectively with L/W=3 μm/10000 μm.

Then, a silicon oxide layer having a thickness of 300 nm was formed as aprotective insulating layer in contact with the oxide semiconductorlayer by a reactive sputtering method. Here, opening portions wereformed over the gate electrode layer, the source electrode layer, andthe drain electrode layer by selectively etching the silicon oxide layerwhich is a protective layer. After that, second heat treatment wasperformed in a nitrogen atmosphere at 250° C. for 1 hour.

Then, heat treatment was performed at 150° C. for 10 hours before themeasurement of Vg-Id characteristics.

Through the above process, a bottom-gate thin film transistor wasmanufactured.

The reason why the thin film transistor has an off-state current ofapproximately 1×10⁻¹³ A as shown in FIG. 28 is that the concentration ofhydrogen in the oxide semiconductor layer could be sufficiently reducedin the above manufacturing process. The concentration of hydrogen in theoxide semiconductor layer is 5×10¹⁹/cm³ or less, preferably 5×10¹⁸/cm³or less, still preferably 5×10¹⁷/cm³ or less. Note that theconcentration of hydrogen in the oxide semiconductor layer was measuredby secondary ion mass spectrometry (SIMS).

Although the example of using an In—Ga—Zn—O-based oxide semiconductor isdescribed, this embodiment is not particularly limited thereto. Anotheroxide semiconductor material, such as an In—Sn—Zn—O-based oxidesemiconductor, a Sn—Ga—Zn—O-based oxide semiconductor, anAl—Ga—Zn—O-based oxide semiconductor, a Sn—Al—Zn—O-based oxidesemiconductor, an In—Zn—O-based oxide semiconductor, an In—Sn—O-basedoxide semiconductor, a Sn—Zn—O-based oxide semiconductor, anAl—Zn—O-based oxide semiconductor, an In—O-based oxide semiconductor, aSn—O-based oxide semiconductor, or a Zn—O-based oxide semiconductor, canalso be used. Furthermore, as an oxide semiconductor material, anIn—Al—Zn—O-based oxide semiconductor mixed with AlO_(x) of 2.5 wt % to10 wt % or an In—Zn—O-based oxide semiconductor mixed with SiO_(x) of2.5 wt % to 10 wt % can be used.

The carrier concentration of the oxide semiconductor layer which ismeasured by a carrier measurement device is preferably less than orequal to 1.45×10¹⁰/cm³, which is intrinsic carrier density of silicon.Specifically, the carrier concentration is 5×10¹⁴/cm³, preferably5×10¹²/cm³. In other words, the carrier concentration of the oxidesemiconductor layer can be made as close to zero as possible.

The thin film transistor can also have a channel length L of 10 nm to1000 nm inclusive, which enables an increase in circuit operation speed,and the off-state current is extremely small, which enables a furtherreduction in power consumption.

In addition, in circuit design, the oxide semiconductor layer can beregarded as an insulator when the thin film transistor is in an offstate.

After that, the temperature characteristics of off-state current of thethin film transistor manufactured in this embodiment were evaluated.Temperature characteristics are important in considering theenvironmental resistance, maintenance of performance, or the like of anend product in which the thin film transistor is used. It is to beunderstood that a smaller amount of change is more preferable, whichincreases the degree of freedom for product designing.

For the temperature characteristics, the Vg-Id characteristics wereobtained using a constant-temperature chamber under the conditions wheresubstrates provided with thin film transistors were kept at respectiveconstant temperatures of −30° C., 0° C., 25° C., 40° C., 60° C., 80° C.,100° C., and 120° C., the drain voltage was set to 6 V, and the gatevoltage was changed from −20 V to +20V.

FIG. 30A shows Vg-Id characteristics measured at the above temperaturesand superimposed on one another, and FIG. 30B shows an enlarged view ofa range of off-state current enclosed by a dotted line in FIG. 30A. Therightmost curve indicated by an arrow in the diagram is a curve obtainedat −30° C.; the leftmost curve is a curve obtained at 120° C.; andcurves obtained at the other temperatures are located therebetween. Thetemperature dependence of on-state currents can hardly be observed. Onthe other hand, as clearly shown also in the enlarged view of FIG. 30B,the off-state currents are less than or equal to 1×10⁻¹² A, which isnear the resolution of the measurement device, at all temperaturesexcept in the vicinity of a gate voltage of −20 V, and the temperaturedependence thereof is not observed. In other words, even at a hightemperature of 120° C., the off-state current is kept less than or equalto 1×10⁻¹² A, and further in consideration that the effective channelwidth W is 10000 μm, it can be seen that the off-state current issignificantly small.

A thin film transistor including a purified oxide semiconductor(purified OS) as described above shows almost no dependence of off-statecurrent on temperature. This also results from the fact that the oxidesemiconductor has an energy gap of 3 eV or more and includes very fewintrinsic carriers. In addition, the source region and the drain regionare in a degenerated state, which is also a factor for showing notemperature dependence. The thin film transistor is mainly operated withcarriers which are injected from the degenerated source region to theoxide semiconductor, and the above characteristics (independence ofoff-state current on temperature) can be explained by independence ofcarrier density on temperature.

In the case where a memory circuit (memory element) or the like ismanufactured using a thin film transistor having such an extremely smalloff-state current, there is very little leakage due to the smalloff-state current. Therefore, memory data can be held for a longerperiod of time.

This application is based on Japanese Patent Application serial no.2009-238914 filed with Japan Patent Office on Oct. 16, 2009, the entirecontents of which are hereby incorporated by reference.

1. (canceled)
 2. A light-emitting device comprising: a display portion,the display portion comprising: a light-emitting element; a color filterbelow and overlapping with the light-emitting element; and a transistorbelow the light-emitting element and electrically connected to thelight-emitting element, the transistor comprising: a first gateelectrode over a substrate; an insulating layer over the first gateelectrode; an oxide semiconductor layer comprising indium, gallium, andzinc over the insulating layer; a gate insulating layer over the oxidesemiconductor layer; a second gate electrode overlapping with the oxidesemiconductor layer over the gate insulating layer; and a sourceelectrode and a drain electrode in contact with a top surface of theoxide semiconductor layer.
 3. A light-emitting device comprising: adisplay portion, the display portion comprising: a light-emittingelement; a color filter below and overlapping with the light-emittingelement; and a transistor below the light-emitting element andelectrically connected to the light-emitting element, the transistorcomprising: a first gate electrode over a substrate; an insulating layerover the first gate electrode; an oxide semiconductor layer comprisingindium, gallium, and zinc over the insulating layer; a gate insulatinglayer over the oxide semiconductor layer; a second gate electrodeoverlapping with the oxide semiconductor layer over the gate insulatinglayer; and a first conductive layer and a second conductive layerelectrically connected to the oxide semiconductor layer.
 4. Thelight-emitting device according to claim 2, wherein the gate insulatinglayer is a silicon oxide layer, a silicon nitride layer, a siliconoxynitride layer, a silicon nitride oxide layer, or an aluminum oxidelayer.
 5. The light-emitting device according to claim 3, wherein thegate insulating layer is a silicon oxide layer, a silicon nitride layer,a silicon oxynitride layer, a silicon nitride oxide layer, or analuminum oxide layer.
 6. The light-emitting device according to claim 3,wherein the first conductive layer and the second conductive layer areprovided in an opening of the gate insulating layer.
 7. Thelight-emitting device according to claim 3, wherein the first conductivelayer and the second conductive layer comprise at least one element ofthe second gate electrode.
 8. The light-emitting device according toclaim 2, wherein the source electrode and the drain electrode compriseat least one element of the second gate electrode.
 9. The light-emittingdevice according to claim 3, wherein the first conductive layer and thesecond conductive layer are provided above the gate insulating layer.10. The light-emitting device according to claim 3, wherein the firstconductive layer and the second conductive layer face each other withthe second gate electrode provided therebeween.
 11. The light-emittingdevice according to claim 2, wherein the source electrode and the drainelectrode face each other with the second gate electrode providedtherebeween.
 12. The light-emitting device according to claim 2, whereinthe oxide semiconductor layer is any one of a microcrystalline film, apolycrystalline film, an amorphous film, and an amorphous film having amicrocrystalline portion.
 13. The light-emitting device according toclaim 3, wherein the oxide semiconductor layer is any one of amicrocrystalline film, a polycrystalline film, an amorphous film, and anamorphous film having a microcrystalline portion.
 14. The light-emittingdevice according to claim 2, wherein the oxide semiconductor layer is amicrocrystalline film having a degree of crystallization of 80% or moreor 90% or more.
 15. The light-emitting device according to claim 3,wherein the oxide semiconductor layer is a microcrystalline film havinga degree of crystallization of 80% or more or 90% or more.
 16. Thelight-emitting device according to claim 2, wherein an off-state currentof the transistor is smaller than or equal to (⅓)×10⁻¹² A/μm.
 17. Thelight-emitting device according to claim 3, wherein an off-state currentof the transistor is smaller than or equal to (⅓)×10⁻¹² A/μm.